IRFR3910 KERSEMI | Alldatasheet
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S D G V DSS = 100V R DS(on) = 0.115Ω I D = 16A
Description
Parameter Max. Units I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 16 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12 A I DM Pulsed Drain Current 60 P D C = 25°C Power Dissipation 79 W Linear Derating Factor 0.53 W/°C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy 150 mJ I AR Avalanche Current 9.0 A E AR Repetitive Avalanche Energy 7.9 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T J Operating Junction and -55 to + 175 T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Absolute Maximum Ratings Parameter Typ. Max. Units R θJC Junction-to-Case ––– 1.9 R θJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W R θJA Junction-to-Ambient ––– 110 Thermal Resistance D-PAK TO-252AA I-PAK TO-251AA l Ultra Low On-Resistance l Surface Mount (IRFR3910) l Straight Lead (IRFU3910) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. PD - 91364B www.kersemi.com 1
2 www.kersemi.com Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V V GS = 0V, I D = 250µA ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient –––0.12 ––– V/°C Reference to 25°C, I D = 1mA GS = 10V, I D = 10A V GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = V GS , I D = 250µA g fs Forward Transconductance 6.4 ––– ––– S V DS = 50V, I D = 9.0A DS = 100V, V GS = 0V DS = 80V, V GS = 0V, T J = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -20V Q g Total Gate Charge ––– ––– 44 I D = 9.0A Q gs Gate-to-Source Charge ––– ––– 6.2 nC V DS = 80V Q gd Gate-to-Drain ("Miller") Charge ––– ––– 21 V GS = 10V, See Fig. 6 and 13 t d(on) Turn-On Delay Time ––– 6.4 ––– V DD = 50V t r D = 9.0A t d(off) Turn-Off Delay Time ––– 37 ––– R G = 12Ω t f D = 5.5Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact C iss Input Capacitance ––– 640 ––– V GS = 0V C oss Output Capacitance ––– 160 ––– pF V DS = 25V C rss Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ T J = 25°C (unless otherwise specified) nH I GSS S D G L S Internal Source Inductance ––– 7.5 ––– R DS(on) Static Drain-to-Source On-Resistance L D Internal Drain Inductance ––– 4.5 ––– I DSS Drain-to-Source Leakage Current S D G Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the I SM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. V SD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, I S = 9.0A, V GS = 0V t rr Reverse Recovery Time ––– 130 190 ns T J = 25°C, I F = 9.0A Q rr Reverse RecoveryCharge ––– 650 970 nC di/dt = 100A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S D Source-Drain Ratings and Characteristics A Notes: V DD = 25V, starting T J = 25°C, L = 3.1mH R G = 25Ω , I AS = 9.0A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 9.0A, di/dt ≤ 520A/µs, V DD ≤ V (BR)DSS T J ≤ 175°C Uses IRF530N data and test conditions This is applied for I-PAK, Ls of D-PAK is measured between lead and center of die contact Pulse width ≤ 300µs; duty cycle ≤ 2%
www.kersemi.com 3 Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics and 100 0.1 1 10 100 I , Drain-to-Source Current (A)D V , Drain-to-Source Volta g e V DS VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V µ s PULSE WIDTH T = 25°C A 4.5V J 100 0.1 1 10 100 4.5V I , Drain-to-Source Current (A)D V , Drain-to-Source Volta g e V DS VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V A µ s PULSE WIDTH T = 175°C J 100 456789 1 0 T = 25°C J GS V , Gate-to-Source Voltage (V) D I , Drain-to-Source Current (A) V = 50V 20µs PULSE W IDTH DS T = 175°C J A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 J T , Junction Temperature (°C) R , Drain-to-Source On Resistance DS(on) (Norm alized) V = 10V GS A I = 15A D
4 www.kersemi.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 5 10 15 20 25 30 35 40 45 Q , Total Gate Char g e nC G V , Gate-to-Source Voltage (V) GS V = 80V V = 50V V = 20V A FOR TEST CIRCUIT SEE FIGURE 13 I = 9.0A D DS DS DS 100 T = 25°C J V = 0V GS V , Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD A T = 175°C J 100 1000 1 10 100 1000 V , Drain-to-Source Volta g e V DS I , Drain Current (A) OPERATION IN THIS AREA LIMITED BY R D DS(on) 10µs 100µs 1ms 10ms A T = 25°C T = 175°C Sin g le Pulse C J 200 400 600 800 1000 1200 1 10 100 C, Capacitance (pF) DS V , Drain-to-Source Volta g e V A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss g s g d ds rss g d oss ds g d C iss C oss C rss
www.kersemi.com 5 Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit V DS 90% 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms V DS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % R D V GS R G D.U.T. 5.0V V DD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T P x Z + T J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) 100 125 150 175 T , Case Temperature ( C) I , Drain Current (A) C D
6 www.kersemi.com Q G Q GS Q GD V G Charge 5.0 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current D.U.T. V DS I D I G 3mA V GS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS I AS R G I AS 0.01 Ω t p D.U.T LV DS - V DD DRIVER A 15V 10V 100 150 200 250 300 350 25 50 75 100 125 150 175 J E , Single Pulse Avalanche Energy (mJ) AS A Startin g T , Junction Temperature V = 25V I TOP 3.7A 6.4A BOTTOM 9.0A DD D
www.kersemi.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current V GS =10V V DD I SD Driver Gate Drive D.U.T. I SD Waveform D.U.T. V DS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFETS V GS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit R G V DD
- dv/dt controlled by R G
- Driver same type as D.U.T.
- I SD controlled by Duty Factor "D"
- D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
- Low Stray Inductance
- Ground Plane
- Low Leakage Inductance Current Transformer
8 www.kersemi.com Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) TO-252AA (D-PARK) Part Marking Information 6.73 (.265) 6.35 (.250) - A - 1 2 3 6.22 (.245) 5.97 (.235) - B - 3X 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 4.57 (.180) 2.28 (. 090) 2X 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5. 46 (.215) 5. 21 (.205) 1.27 (.050) 0.88 (.035) 2. 38 (.094) 2. 19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) M IN. 0.58 (.023) 0.46 (.018) LEAD ASSI GNMENTS 1 - G ATE 2 - D RA IN 3 - SOURCE 4 - D RA IN 10.42 (.410) 9. 40 (.370) NOTES: 1 DI MENSI ONI NG & TOLERANCI NG PER ANSI Y14. 5M, 1982. 2 CONTROLLI NG DI MENSI ON : I NCH. 3 C O N FO R M S TO JED E C O U TLIN E TO -252A A.
4 DI MENSI ONS SHOWN ARE BEFORE SOLDER DI P,
SO LD ER D IP M AX. +0.16 (.006). INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE EXAMPLE : THIS IS AN IRFR120 W ITH ASSEMBLY LOT CODE 9U1P FIRST PORTION OF PART NUMBER SECOND PORTION OF PART NUMBER 120 IRFR 9U 1P A
www.kersemi.com 9 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) TO-251AA (I-PARK) Part Marking Information 6.73 (.265) 6.35 (.250) - A - 6.22 (.245) 5.97 (.235) - B - 3X 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 2.28 (.090) 1.14 (.045) 0.76 (.030) 5. 46 (.215) 5. 21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0. 58 (.023) 0. 46 (.018) LEAD ASSI GNMENTS 1 - G ATE 2 - D RA IN 3 - SOURCE 4 - D RA IN NOTES: 1 DI MENSI ONI NG & TOLERANCI NG PER ANSI Y14. 5M, 1982. 2 CONTROLLI NG DI MENSI ON : I NCH. 3 C O N FO R M S TO JED EC O U TLIN E TO -252A A.
4 DI MENSI ONS SHOW N ARE BEFORE SOLDER DI P,
SO LDE R DIP M A X. +0.16 (.006). 9.65 (. 380) 8.89 (. 350) 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE FIRST PORTION OF PART NUMBE R SECOND PORTION OF PART NUMBER 120 9U 1P EXAMPLE : THIS IS AN IRFU120 W ITH ASSEMBLY LOT CODE 9U1P IRFU
10 www.kersemi.com Tape & Reel Information TO-252AA TR 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) TRR TRL NOTES : 1. CONTROLLI NG DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. OU TLINE CONFO RMS TO EIA-481. 16 mm