TPC8107 EVVOSEMI | Alldatasheet

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 Load Switch  Notebook Adaptor Switch Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on T C = 25 °C. PRODUCT SUMMARY VDS (V) R DS(on) (mΩ) ID (A)d Qg (Typ.) - 30 11 at VGS = - 10 V - 13.5 29.5 nC 15 at VGS = - 4.5 V - 11.6 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 13.5 A TC = 70 °C - 11.9 TA = 25 °C - 10.9a, b TA = 70 °C - 8.6a, b Pulsed Drain Current IDM - 50 Continuous Source-Drain Diode Current TC = 25 °C IS - 4.1 TA = 25 °C - 2.2a, b Avalanche Current L = 0.1 mH IAS - 20 Single-Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 5.0 WTC = 70 °C 3.2 TA = 25 °C 2.7a, b TA = 70 °C 1.7a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 38 46 °C/WMaximum Junction-to-Foot Steady State RthJF 20 25 S G D P-Channel MOSFET S S D D D S G D SOP-8 Top View P-Channel 30 V (D-S) MOSFET TPC8107 Rev:2023A2 1

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 34 mV/ °CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 5.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.4 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 10 A 11 ΩVGS = - 4.5 V, ID = - 8 A 15 Forward T ransconductancea gfs VDS = - 10 V, ID = - 10 A 28 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 2550 pFOutput Capacitance Coss 455 Reverse Transfer Capacitance Crss 390 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 10 A 57 86 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 29.5 45 Gate-Source Charge Qgs 8 Gate-Drain Charge Qgd 22 Gate Resistance Rg f = 1 MHz 0.5 2.2 4.4 Ω Tur n-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 13 25 ns Rise Time tr 12 24 Turn-Off DelayTime td(off) 40 70 Fall Time tf 91 8 Tur n-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 48 80 Rise Time tr 92 160 Turn-Off DelayTime td(off) 34 60 Fall Time tf 19 35 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I S TC = 25 °C - 4.1 APulse Diode Forward Current ISM - 60 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.75 - 1.2 V Body Diode Reverse Recovery Time t rr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 27 45 ns Body Diode Reverse Recovery Charge Q rr 16 27 nC Reverse Recovery Fall Time ta 12 nsReverse Recovery Rise Time tb 15 P-Channel 30 V (D-S) MOSFET TPC8107 Rev:2023A2 2 m

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge V DS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS =1 0t h ru 4 V VGS =3V VGS = 2 V 0.005 0.010 0.015 0.020 0.025 0.030 0 1 02 03 04 05 06 0 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V 0 1 22 43 64 8 60 ID =1 0A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) V GS DS =1 0VV DS =1 5VV VDS = 20 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 012345 V GS - Gate-to-Source Voltage (V) - Drain Current (A)ID TC = 125 °C TC = 25 °C TC = - 55 °C Crss 800 1600 2400 3200 4000 0 5 10 15 20 25 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF)Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) ID = - 10 A VGS = - 10 V VGS = - 4.5 V P-Channel 30 V (D-S) MOSFET TPC8107 Rev:2023A2 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 0.01 0.001 0.1 100 TJ = 150 °C TJ = 25 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 Variance (V)VGS(th) TJ - Temperature (°C) ID =2 5 0µA ID =5 m A On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 02468 10 - On-Resistance (Ω)R DS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =1 0 A 102 136 170 0 111 0 0 .00 .01 Time (s) Power ( W) 0.1 Safe Operating Area 0.01 100 100 0.01 - Drain Current (A)ID 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0.1 1 10 TA = 25 °C Single Pulse BVDSS Limited byR DS(on)* DC 10 s 100 ms 10 ms 1m s 1 s P-Channel 30 V (D-S) MOSFET TPC8107 Rev:2023A2 4

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 3.4 6.8 10.2 13.6 17.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power, Junction-to-Foot TC - Case Temperature (°C) 0.0 1.2 2.4 3.6 4.8 6.0 0 25 50 75 100 125 150 Power (W) Power Derating, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power (W) P-Channel 30 V (D-S) MOSFET TPC8107 Rev:2023A2 5

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 °C/W 3. TJM -- TA =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.02 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1

0.01 Single Pulse

0.02 0.05 P-Channel 30 V (D-S) MOSFET TPC8107 Rev:2023A2 6

P-Channel 30 V (D-S) MOSFET TPC8107 Min Max Min Max A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e L 0.400 1.270 0.016 0.050 θ 0 °8 °0 °8 ° Dimensions In Millimeters Dimensions In InchesSymbol 1.270(BSC) 0.050(BSC) SOP-8 Rev:2023A2 7

P-Channel 30 V (D-S) MOSFET TPC8107 Rev:2023A2 8 Marking Orderinginformation Order code Package Baseqty Deliverymode TPC8107 SOP-8 3000 Tape and reel