BSS308PE EVVOSEMI | Alldatasheet

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Features

VDS (V)= -30V RDS(ON) 80m (V GS = 10V) /G108RDS(ON) 130m (VGS = 4.5V) /G108 /G108 /G108 /G108

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA -30 - - V Gate threshold voltage V GS(th) V DS=VGS, I D=-11µA -2.0 -1.5 -1.0 Drain-source leakage current I DSS V DS=-30V, V GS=0 V, T j=25 °C -- - 1 μA V DS=-30V, V GS=0V, Gate-source leakage current I GSS V GS=-20V, V DS=0V -- - 5 μA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-1.7 A - 88 130 mΩ V GS=-10 V, I D=-2 A -6 2 8 0 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.6 A 4.6 - S Values 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. BSS308PE /G56 Rev:2023A2 2

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 376 500 pF Output capacitance C oss - 196 261 Reverse transfer capacitance Crss -1 2 1 8 Turn-on delay time t d(on) - 5.6 - ns Rise time t r - 7.7 - Turn-off delay time t d(off) - 15.3 - Fall time t f - 2.8 - Gate Charge Characteristics Gate to source charge Q gs - -1.2 - nC Gate to drain charge Q gd - -0.6 - Gate charge total Q g - -5.0 - Gate plateau voltage V plateau - -3.1 - V Reverse Diode Diode continous forward current I S - - -0.4 A Diode pulse current I S,pulse - - -8.4 Diode forward voltage V SD V GS=0 V, I F=-2 A, Reverse recovery time t rr -1 4- n s Reverse recovery charge Q rr - -5.9 - nC V R=10 V, I F=-2 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15V, V GS=-10 V, I D=-2 A, R G=6 Ω V DD=-15 V, I D=-2 A, V GS=0 to -10 V /G56 Rev:2023A2 3 BSS308PE

1 µs10 µs 100 µs 1 ms 10 ms DC 10210110010-1 101 100 10-1 10-2 10-3 10-4 V DS [V] I D [A] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-410-5 103 102 101 100 10-1 t p [s] Z thJA [K/W] 0.125 0.25 0.375 0.5 0 40 80 120 160 T A [°C] P tot [W] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 0 20 40 60 80 100 120 140 160 T A [°C] I D [A] /G56 Rev:2023A2 4 BSS308PE 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V Typical Electrical Characteristics

I D [A] g fs [S] 2.8 V 3 V 3.3 V 3.5 V 4 V 4.5 V 10 V V DS [V] I D [A] 25 °C 150 °C V GS [V] I D [A] 2.8 V 3 V 3.3 V 3.5 V 4 V 4.5 V 10 V 100 150 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 3.5 4 I D [A] R DS(on) [mΩ] BSS308PE 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS Typical Electrical Characteristics Rev:2023A2 5

98 % 100 120 140 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] typ 98 % 2 % 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 100 101 102 103 0 5 10 15 20 V DS [V] C [pF] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 101 100 10-1 10-2 10-3 0 0.4 0.8 1.2 1.6 V SD [V] I F [A] /G56 Rev:2023A2 6 BSS308PE 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-2 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=11 µA parameter: I D Typical Electrical Characteristics

-60 -20 20 60 100 140 T j [°C] V BR(DSS) [V] 6 V 15 V 24 V 0123456 Q gate [nC] V GS [V] 25 °C 100 °C 125 °C 103102101100 101 100 10-1 t AV [µs] I AV [A] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g /G56 Rev:2023A2 7 BSS308PE

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=250 µA 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-2 A pulsed parameter: T j(start) parameter: V DD Typical Electrical Characteristics

/G56Rev:2023A2 8 BSS308PE Marking Orderinginformation Order code Package Baseqty Deliverymode BSS308PE SOT-23 3000 Tape and reel Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. SOT-23 PACKAGE OUTLINE DIMENSIONS