BSS84 EVVOSEMI | Alldatasheet
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Technical content
1.GATE 2.SOURCE 3.DRAIN ■Simplified outline(SOT-23) BSS84 P-Channel MOSFET Energy efficient Low threshold voltage High-speed switching Miniature surface mount package saves board space ESD protected(HBM) up to 2KV ■ Features Parameter Symbol Maximum Units Drain-Source Voltage -VDS 50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current -ID 0.13 A Pulsed Drain Current Note1 @tp＜10μs -I DM 0.52 Power Dissipation PD 225 mW Junction and Storage Temperature Range T J, TSTG 150, -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note2 RθJA 556 °C/W ■ Absolute Maximum Ratings Ta = 25℃ D S G Rev:2022A2
Parameter Symbol Conditions Min. Typ. Max. Units Static Parameters Drain-Source Breakdown Voltage - BVDSS -ID=250µA, VGS=0V 50 -- -- V Zero Gate Voltage Drain Current -I DSS -VDS=50V, VGS=0V -- -- 1 µA -VDS=25V, VGS=0V -- -- 0.1 µA Gate-Body Leakage Current I GSS V DS=0V, VGS=±20V -- 1 5 µA Gate Threshold Voltage Note3 -V GS(th) VDS=VGS, -ID=250µA 0.9 1 .3 2 V Static Drain-Source On-Resistance Note3 RDS(ON) -VGS=10V, -ID=0.1A -- 1.7 8 Ω -VGS=5V, -ID=0.1A -- 1.9 10 Ω Body Diode Forward Voltage -V SD -IS=0.13A, VGS=0V -- -- 1.2 V Dynamic Parameters Forward Transconductance Note3 gFS -V DS=25V, -ID=0.1A 50 -- -- mS Input Capacitance Ciss VGS=0V, -VDS=5V, f=1MHz -- 30 -- pF Output Capacitance Coss -- 10 -- pF Reverse Transfer Capacitance C rss -- 5 -- pF Switching Parameters Turn-On DelayTime tD(on) -VDD=15V, RL=50Ω, -ID=2.5A -- 2.5 -- ns Turn-On Rise Time tr -- 1 -- ns Turn-Off DelayTime tD(off) -- 16 -- ns Turn-Off Fall Time tf -- 8 -- ns Source-Drain Diode characteristics Diode forward current -IS -- -- 0.13 A Diode pulsed forward current -I SM -- -- 0.52 A Notes: 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%. ■ Electrical Characteristics Ta = 25℃ BSS84 Rev:2022A2
0.0 -0.4 -0.8 -1.2 -1.6 0 -2 -4 -6 -8 -10 VGS=-10V VGS=-5V Ta=25℃ Pulsed VGS=-2V VGS=-3V VGS=-4.5V Output Characteristics DRAIN TO SOURCE VOLTAGE VDS(V) DRAIN CURRENT ID (A) 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 VDS=-10V Pulsed Ta=25℃ DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Transfer Characteristics Ta=125℃ VGS=-10V VGS=-5V Ta=25℃ Pulsed RDS(ON) ID ON-RESISTANCE RDS(ON) () DRAIN CURRENT ID (A) 0 -2 -4 -6 -8 -10 Pulsed ID=-0.1A Ta=125℃ Ta=25℃ RDS(ON) - VGS ON-RESISTANCE RDS(ON) () GATE TO SOURCE VOLTAGE VGS (V) 1E-3 0.01 0.1 5-1 Pulsed Ta=125℃ Ta=25℃ IS - VSD SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) 25 50 75 100 125 0.0 -0.5 -1.0 -1.5 ID=-250uA Threshold Voltage THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE Tj (℃) BSS84 Rev:2022A2
max. bp cD E e1 H E Lp Qw v mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X ■ SOT-23 BSS84 Rev:2022A2