SSM3J332R EVVOSEMI | Alldatasheet
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Notes: a. Based on T C = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. ABSOLUTEMA XIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 5.6 A TC = 70 °C - 5.1 TA = 25 °C - 5.4b,c TA = 70 °C - 4.3b,c Pulsed Drain Current (t = 100 µs) IDM - 18 Continous Source-Drain Diode Current TC = 25 °C IS - 2.1 TA = 25 °C - 1b,c Maximum Power Dissipation TC = 25 °C PD 2.5 WTC = 70 °C 1.6 TA = 25 °C 1.25b,c TA = 70 °C 0.8b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb,d t 5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 VDS (V)= -30V RDS(ON) 46m (V GS = -10V) RDS(ON) 54m (VGS = -4.5V) Rev:2023A2 1 /c39 /c54 /c42 /c22 /c20 /c21 SOT–23 1. GATE 2. SOURCE 3. DRAIN SSM3J332R P−CHANNEL MOSFET
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 19 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 4 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 0.5 - 2.0 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 2.5 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 4.4 A 46 mVGS = - 4.5 V, ID = - 3.6 A Forward T ransconductancea gfs VDS = - 15 V, ID = - 3.4 A 18 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 1295 pFOutput Capacitance Coss 150 Reverse Transfer Capacitance Crss 130 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A 24 36 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A 11.4 17 Gate-Source Charge Qgs 3.4 Gate-Drain Charge Qgd 3.8 Gate Resistance Rg f = 1 MHz 1.5 7.7 15.4 Tur n-On Delay Time td(on) VDD = - 15 V, RL = 3.5 ID - 4.3 A, VGEN = - 10 V, Rg = 1 13 20 ns Rise Time tr 48 Turn-Off Delay Time td(off) 38 57 Fall Time tf 61 2 Tur n-On Delay Time td(on) VDD = - 15 V, RL = 3.5 ID - 4.3 A, VGEN = - 4.5 V, Rg = 1 28 42 Rise Time tr 16 24 Turn-Off Delay Time td(off) 30 45 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S TC = 25 °C - 2.1 A Pulse Diode Forward Current (t = 100 µs) ISM - 80 Body Diode Voltage VSD IS = - 4.3 A, VGS 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 15 23 ns Body Diode Reverse Recovery Charge Qrr 71 4 n C Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 7 V Rev:2023A2 2 SSM3J332R P−CHANNEL MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 0.5 1 1.5 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 4 V VGS = 4.5 V VGS = 10 V thru 5 V VGS = 3 V 0.0 0.04 0.06 0.08 0 10 20 30 40 50 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 5 10 15 20 25 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 24 V VDS = 15 V VDS = 8 V ID = 5.4 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.5 1.5 0 0.6 1.2 1.8 2.4 3 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 450 900 1350 1800 0 6 12 18 24 30 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) ID = 5.4 A VGS = 10 V VGS = 4.5 V Rev:2023A2 3 SSM3J332R P−CHANNEL MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 1.25 1.5 1.75 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ - Temperature (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.000 0.020 0.040 0.060 0.080 2 4 6 8 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 5.4 A 0.01 0.1 1 10 100 1000 Time (s) Power (W) TA =2 5 ° C Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TA = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 10s, 1 s DC Rev:2023A2 4 SSM3J332R P−CHANNEL MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 2.2 3.4 4.6 5.8 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power, Junction-to-Foot 0.62 1.24 1.86 2.48 3.1 0 25 50 75 100 125 150 Power (W) TC - Case Temperature (°C) Power, Junction-to-Ambient 0.0 0.3 0.5 0.8 1.0 0 25 50 75 100 125 150 Power (W) TA - Ambient Temperature (°C) Rev:2023A2 5 SSM3J332R P−CHANNEL MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 10110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 Rev:2023A2 6 SSM3J332R P−CHANNEL MOSFET
Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. Marking
Ordering information
Ordercode Package Baseqty Deliverymode SSM3J332R SOT-23 3000 Tape andreel SOT-23 PACKAGE OUTLINE DIMENSIONS Rev:2023A2 7 SSM3J332R P−CHANNEL MOSFET