SPD30P6PG

SPD30P06 EVVOSEMI | Alldatasheet

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/c183 P-Channel /c183 Enhancement mode /c183 Avalanche rated /c183 dv/dt rated /c183 175°C operating temperature Product Summary Maximum Ratings ,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit -30 -21.5 ID ID puls -120 EAS 250 mJ Continuous drain current A TC = 25 °C TC = 100 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse ID = -30 A , V DD = -25 V, R GS = 25 /c87 Avalanche energy, periodic limited by Tjmax EAR 12.5 Reverse diode dv/dt dv/dt 6 IS = -30 A, V DS = -48 V, di/dt = 200 A/µs, Tjmax = 175 °C kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 125 W Operating and storage temperature Tj , Tstg -55+175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Rev:2023A2 1 G D S SPD30P06 -60V P-Channel MOSFET mJ W RDS(on) =75 m VDS (V) = -60V ID = -30A (VGS = -10V) (VGS = -10V) /c183 /c183 /c183

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC 1.2 K/W Thermal resistance, junction - ambient, leaded RthJA 100 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -250 µA V(BR)DSS -60 V Gate threshold voltage, VGS = VDS ID = -1.7 mA VGS(th) -2.1 -3 -4 Zero gate voltage drain current VDS = -60 V, V GS = 0 V, Tj = 25 °C VDS = -60 V, V GS = 0 V, Tj = 150 °C µA -100 IDSS -0.1 -10 Gate-source leakage current IGSS -10 -100 VGS = -20 V, VDS = 0 V nA Drain-source on-state resistance VGS = -10 V, ID = -21.5 A RDS(on) 69 75 2Rev:2023A2 mΩ SPD30P06 -60V P-Channel MOSFET

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max.Dynamic Characteristics Transconductance VDS /c1792*ID*RDS(on)max , ID = -21.5 A gfs 5.2 10.4 S Input capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C iss 1228 1535 pF Output capacitance C oss 387 383 VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C rss 142 177 Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -21.5 A, R G = 1.6 /c87 td(on) 13 19.5 ns Rise time VDD = -30 V, VGS = -10 V, ID = -21.5 A, R G = 1.6 /c87 tr 11 16.5 Turn-off delay time td(off) 30 45VDD = -30 V, VGS = -10 V, ID = -21.5 A, R G = 1.6 /c87 Fall time VDD = -30 V, VGS = -10 V, ID = -21.5 A, R G = 1.6 /c87 tf 20 30 3Rev:2023A2 SPD30P06 -60V P-Channel MOSFET

Electrical Characteristics, at T j = 25 °C, unless UnitValuesSymbolParameter min. typ. max. Q gs 3.7 5.6 nC Q gd 13.8 20.7 Dynamic Characteristics Gate to source charge VDD = -48 V, ID = -30 A Gate to drain charge VDD = -48 V, ID = -30 A Gate charge total Q g 48 VDD = -48 V, ID = -30 A, VGS = 0 to -10 V Gate plateau voltage VDD = -48 V , ID = -30 A V(plateau) -5.2 V Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS -30 A Inverse diode direct current,pulsed TC = 25 °C ISM -120 Inverse diode forward voltage VGS = 0 V, IF = -30 VSD -1.3 -1.7 V Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs trr 64.6 97 ns Reverse recovery charge VR = -30 V, IF=lS , diF/dt = 100 A/µs Q rr 153 230 nC 4Rev:2023A2 SPD30P06 -60V P-Channel MOSFET

ID = f (TC ) parameter: VGS /c179 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC -12 -16 -20 -24 A -32 SPD30P06P ID Power dissipation Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 °C 190 TC 100 110 120 W 140 SPD30P06P Ptot Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD30P06P ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C -10 -1 -10 0 -10 1 V -10 2 VDS 0 -10 1 -10 2 -10 3 -10 A SPD30P06P ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 31.0µs 5Rev:2023A2 SPD30P06 -60V P-Channel MOSFET

Typ. drain-source-on-resistance R DS(on) = f (ID ) parameter: VGS 0 -10 -20 -30 -40 A -60 ID 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 /c87 0.26 SPD30P06P R DS(on) c VGS [V] = c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k k -10.0 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs VDS -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 A -75 SPD30P06P ID VGS [V] a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0h h -7.5 i i -8.0 j j -9.0 k Ptot = 125.00W k -10.0 Typ. transfer characteristics ID= f ( VGS ) VDS /c179 2 x ID x R DS(on)max parameter: tp = 80 µs VGS -10 -20 -30 -40 A -60 ID Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs ID S gfs 6Rev:2023A2 SPD30P06 -60V P-Channel MOSFET

Drain-source on-state resistance R DS(on) = f (Tj) parameter : ID = -21.5 A, VGS = -10 V -60 -20 20 60 100 140 °C 200 Tj 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 /c87 0.24 SPD30P06P R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -1.7 mA -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 98% -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 typ -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 VGS(th) Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 -5 -10 -15 -20 -25 V -35 VDS 2 10 3 10 4 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD 0 -10 1 -10 2 -10 3 -10 A SPD30P06P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%) 7Rev:2023A2 SPD30P06 -60V P-Channel MOSFET

EAS = f (Tj) para.: ID = -30 A , VDD = -25 V, RGS = 25 /c87 25 45 65 85 105 125 145 °C 185 Tj 100 120 140 160 180 200 220 mJ 260 EAS Typ. gate charge VGS = f (QGate) parameter: ID = -30 A pulsed 0 10 20 30 40 nC 55 Q Gate -10 -12 V -16 SPD30P06P VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 SPD30P06P V(BR)DSS 8Rev:2023A2 SPD30P06 -60V P-Channel MOSFET

9Rev:2023A2 SPD30P06 Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D Package Mechanical Data TO-252 Marking Orderinginformation Order code Package Baseqty Deliverymode TO-252 2500 Tape and reel SPD30P6PG -60V P-Channel MOSFET