BSS138 EVVOSEMI | Alldatasheet

Document overview

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Technical content

■ Features

  • VDS (V) = 50V
  • ID = 200 mA (VGS = 10V)
  • RDS(ON) ＜ 3.5Ω (VGS = 10V)
  • Fast Switching Speed
  • Low On-Resistance ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 50 Drain-Gate Voltage RGS≤ 20KΩ VDG 50 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 200 mA Power Dissipation PD 300 mW Thermal Resistance.Junction- to-Ambient RthJA 417 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 50 V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=0V 0.5 μA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 0.5 1.5 V Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=220mA 3.5 Ω Forward Transconductance gFS VDS=25V, ID=0.2A,f=1KHz 100 mS Input Capacitance Ciss 50 Output Capacitance Coss 25 Reverse Transfer Capacitance Crss 8 Turn-On DelayTime td(on) 20 Turn-Off DelayTime td(off) 20 ns VDS=30V, ID=0.2A,RG=50Ω VGS=0V, VDS=10V, f=1MHz pF ■Simplified outline(SOT23) 1. Gate 2. Source 3. Drain BSS138 N-Channel MOSFET Rev:2022A2

0.1 0.2 0.3 0.4 0.5 0.6 10 32 54 76 8 9 10 I , DRAIN-SOURCE CURRENT (A)D V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 1 Drain-Source Current vs. Drain-Source Volta ge T = 25°Cj V = 3.5VGS V = 3.25VGS V = 3.0VGS V = 2.75VGS V = 2.5VGS V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Transfer Characteristics 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0.8 I , DRAIN-SOURCE CURRENT (A)D -55°C 150°C 25°C V = 1VDS ■ Typical Characterisitics 0.65 T , JUNCTION TEMPERATURE (°C)j Fig. 3 Drain-Source On Resistance vs. Junction Temperature 0.85 1.05 1.25 1.65 1.45 1.85 2.05 2.25 2.45 -55 -5 45 95 145 R , NORMALIZED DRAIN-SOURCE ON RESISTANCE (W )DS(ON) V = 10VGS V = 4.5VGS I = 0.5AD I = 0.075AD 0.2 0.4 0.6 0.8 1.4 1.2 1.8 1.6 -40-55 5-25 -10 50 20 3580 9565 110 125 140 V , GATE THRESHOLD VOLTAGE (V)GS(th) T , JUNCTION TEMPERATURE (°C)j Fig. 4 Gate Threshold Voltage vs. Junction Temperature I = 1.0mAD I , DRAIN CURRENT (A)D Fig. 5 Drain-Source On Resistance vs. Drain Current R , DRAIN-SOURCE ON RESISTANCE (W )DS(ON) 150°C -55°C 25°C V = 2.5VGS I , DRAIN CURRENT (A)D Fig. 6 Drain-Source On Resistance vs. Drain Current 150°C -55°C 25°C V = 2.75VGS BSS138 Rev:2022A2

■ Typical Characterisitics V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 7 Drain-Source On Resistance vs. Drain Current 150°C -55°C 25°C V = 4.5VGS 0.5 1.5 2.5 3.5 I , DRAIN CURRENT (A)D Fig. 8 Drain-Source On Resistance vs. Drain Current 150°C -55°C 25°C V = 10VGS I , DIODE CURRENT (A)D 0.001 0.01 0.1 V , DIODE FORWARD VOLTAGE (V)SD Fig. 9 Body Diode Current vs. Body Diode Voltage 150°C -55°C 25°C C, CAPACITANCE (pF) 100 V , DRAIN SOURCE VOLTA GE (V)DS Fig. 10 Capacitance vs. Drain Source Voltage 0 5 10 15 20 25 30 V = 0VGS f = 1MHz CrSS COSS CiSS BSS138 Rev:2022A2

max. bp cD E e1 H E Lp Qw v mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X ■ SOT-23 BSS138 Rev:2022A2