TAT7457 QORVO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 14

Technical content

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 1 of 14 - www.qorvo.com Product Overview The TAT7457 is a low -cost RF amplifier designed for applications from DC to 2000 MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers used in cable television applications such as optical receivers and low noise front ends. The TAT7457 has features allowing a great deal of design- in flexibility. Gain and return loss are adjustable with an external feedback resistor. An internal bias circuit mitigates the effect of temperature and process variation and an external resistor may be used to adjust the bias current to optimize distortion or noise performance. There are no on - chip capacitors limiting the low freq uency response which extends down to DC. The TAT7457 is fabricated using 6 -inch GaAs pHEMT technology to optimize performance and cost. It provides excellent gain and retu rn loss consistency inherent to the pHEMT process. Functional Block Diagram Top View

Applications

  • Single-ended and Push-pull Optical Receivers
  • Low-noise Drop Amplifiers
  • Distribution Amplifiers
  • Multi-Dwelling Units
  • Single-ended Gain Block Key Features
  • Gain, return loss and bias externally adjustable
  • On-chip active bias for consistent bias current and repeatable performance
  • DC – 2000 MHz bandwidth
  • Low noise: typical NF < 2 dB to 1000 MHz
  • Flexible 5 V to 8 V biasing
  • IDD = 120 mA typical at VDD 5 V in application circuit
  • 19 dB typical gain in application circuit
  • +40 dBm typical OIP3
  • +61 dBm typical OIP2
  • +21 dBm typical P1dB
  • Low distortion: CSO -66 dBc, CTB -78 dBc
  • (10 dBmV / ch at input, 80 ch NTSC flat)
  • pHEMT device technology

Ordering Information

Part Number Ordering Info Description TAT7457 1074961 TAT7457 Sample (1 piece) TAT7457EB 1074962 50-1200MHz Evaluation Board TAT7457TR 1074959 1000 pieces on a 13” reel RF IN GND RF OUT / VDD 1 2 3 Backside Paddle - GND External feedback circuit for gain and return loss adjustment.

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 2 of 14 - www.qorvo.com Absolute Maximum Ratings Parameter Rating Storage Temperature Range −65 to +150 °C Device Voltage +10 V Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Parameter Min Typ Max Unit VDD 5 8 V IDD 120 mA Tj for >106 hours MTTF +150 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Condition (1) Min Typ Max Unit Frequency Range DC 1200 MHz Gain 50-1000 MHz 19 dB Gain Flatness +/-0.7 dB Noise Figure 2.0 dB Input Return Loss 18 dB Output Return Loss 18 dB Gain 50-1200 MHz 19 dB Gain Flatness +/-0.7 dB Noise Figure 2.3 dB Input Return Loss 14 dB Output Return Loss 17 dB Output P1dB +21 dBm Output IP2 f1=225 MHz, f2= 325 MHz Pout=+5 dBm / tone 61 dBm Output IP3 40 dBm CSO 10 dBmV / ch at input, flat loading, 80 channels NTSC+QAM up tp 1218 MHz -66 dBc CTB -78 dBc Thermal Resistance, θjc Junction to Case 38 °C/W Notes: 1. Typical performance at these conditions: Temp = +25 °C, VDD = +5 V, 75 Ω system

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 3 of 14 - www.qorvo.com Evaluation Board Schematic Evaluation Board Bill of Materials Ref Designator Description Manufacturer Part Number PCB PCB, TAT7547 Qorvo TAT 50-0052 U1 Amplifier, SOT-89 Qorvo TAT7457 R1 RES, 1 kΩ, 1%, 1/10W, 0402 Kamaya RMC1/16SK1001FTH R2 RES, 0 Ω, 1/4W, 1206 Kamaya RMC1/8JPTP R3 DNP N/A N/A R4 RES, 0 Ω, 0402 Kamaya RMC1/16SJPTH R5 RES, 37.4 kΩ, 1%, 1/10W, 0402 Panasonic ERJ-2RKF3742X C1, C2 CAP, 0.01uF, 10%, 50V, X7R, 0603 Kemet C0603C103K5REC7867 C3, C4 CAP, 0.1uF, 10%, 25V, X7R, 0603 Murata GCM155R71H103KA55D C5, C6 CAP, 0.1uF, 10%, 25V, X7R, 0603 Kemet C0603C104K3RACTU L1, L2 IND, 4.7 nH, 5%, W/W, 0402 Coilcraft 0402CS-4N7XJLW L3 IND, 880 nH, +/-5%, 1206 Murata LQH31HNR88J03 L4 IND, 0.9 uH, 10%, 1.3A, W/W, 1008 Coilcraft 1008AF-901XZKL J1 CONN, HDR, RT ANG, 2 PIN, 0.100", T/H Molex 022-28-8021 J2, J3 CONN. 75 OHM, EDGE LAUNCH F Lighthorse Technology LTI-FSF55NT-P

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 4 of 14 - www.qorvo.com Evaluation Board PCB Stack Up and Material 1 oz. Cu bottom layer FR4 1 oz. Cu top layer 0.062 ± 0.006 Finished Board Thickness

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 5 of 14 - www.qorvo.com Performance Data at VDD = 5 V Notes: (1) VDD = +5 V, IDD = 120 mA 0 325 650 975 1300 S21 (dB) Freq (MHz) Gain +85°C +25°C −40°C -40 -35 -30 -25 -20 -15 -10 0 325 650 975 1300 S11 (dB) Freq (MHz) Input Return Loss +85°C +25°C - 40°C -100 -90 -80 -70 -60 -50 0 100 200 300 400 500 600 CSO & CTB (dBc) Frequency (MHz) CSO & CTB CTB +85°C CTB +25°C CTB −40°C CSO +85°C CSO +25°C CSO −40°C 80 ch NTSC + QAM (at 6dB offset) upto 1218 MHz, flat loading, Pin = 10 dBmV/ch. -40 -35 -30 -25 -20 -15 -10 0 325 650 975 1300 S22 (dB) Freq (MHz) Output Return Loss +85°C +25°C -40°C 0.0 0.8 1.6 2.4 3.2 4.0 0 325 650 975 1300 NF (dB) Freq (MHz) Noise Figure +85°C +25°C −40°C

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 6 of 14 - www.qorvo.com Performance Data at VDD = 8 V Notes: (1) VDD = +8 V, IDD = 140 mA (2) IDD adjusted with an external supply, similar to adjusting R3 and R5. 0 325 650 975 1300 S21 (dB) Freq (MHz) Gain -400 C +250 C +850 C -400 C +250 C +850 C -40 -35 -30 -25 -20 -15 -10 0 325 650 975 1300 S11 (dB) Freq (MHz) Input Return Loss -400 C +250 C +850 C -100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 0 100 200 300 400 500 600 CSO & CTB (dBc) Freq (MHz) CSO & CTB 80 ch NTSC @ +10 dBmV/ch FLAT Input CTB -400 C CTB +250 C CTB +850 C CSO -400 C CSO +250 C CSO +850 C -40 -35 -30 -25 -20 -15 -10 0 325 650 975 1300 S22 (dB) Freq (MHz) Output Return Loss -400 C +250 C +850 C 0 325 650 975 1300 NF (dB) Freq (MHz) Noise Figure -400 C +250 C +850 C

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 7 of 14 - www.qorvo.com Additional Applications; 2 GHz Satellite Evaluation Board Bill of Materials; 2.0 GHz Satellite Ref Designator Description Manufacturer Part Number PCB TAT7547 Qorvo TAT 50-0052 U1 Amplifier, SOT-89 Qorvo TAT7457 R1 RES, 750 Ω, 1%, 0402 Panasonic ERJ-2RKF7500X R5 RES, 75 kΩ, 5%, 0402 Panasonic ERJ-2GEJ753X C1, C2 CAP, 0.01 uF, 10%, X7R, 16V, 0603 Murata GRM188R71H103KA010D C3 CAP, 560 pF, 10%, X7R, 16V, 0402 Murata GCM155C1H561J16D C4 CAP, 0.01 uF, 10%, X7R, 25V, 0402 Murata GRM155R71E103JA01D CIN CAP, 0.5 pF +/-0.1 pF, 50V, C0G, 0603 Murata GRM1885C1HR50BA01D L1 IND, 2.7 nH, 5%, 0402 Murata LQG15HS2N7S02D L2 IND, 2.0 nH, 5%, 0402 Murata LQG15HS2N0S02D L3 IND, 880 nH, 10%, 1206 Murata LQH31HNR88J03 J1 CONN, HDR, RT ANG, 2 PIN, 0.100", T/H Molex 022-28-8021 J2, J3 CONN. 75 OHM, EDGE LAUNCH F Lighthorse Technology LTI-FSF55NT-P

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 8 of 14 - www.qorvo.com Performance Data; 2.0 GHz Satellite Notes: (1) VDD = +5 V, IDD = 120 mA 0 600 1200 1800 2400 S21 (dB) Freq (MHz) Gain -40 -35 -30 -25 -20 -15 -10 0 600 1200 1800 2400 S11 (dB) Freq (MHz) Input Return Loss -100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 0 100 200 300 400 500 600 CSO & CTB (dBc) Freq (MHz) CSO & CTB 80 ch NTSC @ +8 dBmV/ch FLAT Input CTB CSO -40 -35 -30 -25 -20 -15 -10 0 600 1200 1800 2400 S22 (dB) Freq (MHz) Output Return Loss 0.0 0.8 1.6 2.4 3.2 4.0 0 600 1200 1800 2400 NF (dB) Freq (MHz) Noise Figure

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 9 of 14 - www.qorvo.com Detailed Device Description The TAT7457 was designed to be a low cost general purpose amplifier suitable for a wide range of applications. The TAT7457 is a high gain cascode amplifier with no internal shunt feedback. An on -chip biasing network sets the operating conditions for the FETs. This network stabilizes bias current against changes in temperature as well as against the normal process variations expected from wafer to wafer. Stabilized bias current will lead to more consistent RF performance. Customers may set the gain and return loss of their amplifier by selecting an appropriate external feedback resistor. Reducing the value of the feedback resistor will reduce the gain and lower the input and output impedances. Low noise TIA designers may set the value of feedback to a high value (>1k ohm) for best performance. There are no on -chip capacitors that limit the low frequency response, enabling the TAT7457 frequency response to extend to DC. The open loop gain ( no external feedback) and high frequency gain performance is shown in the plot to the left. Distortion and noise performance may be optimized with simple changes to the application circuit (refer to the EVB Schematic on page 3) . Noise performance may be improved by adding a large resistor R3 of approximately 20 K to ground. This resistor will reduce the bias current and improve noise. Best distortion occurs on a 6 V supply; however, for impr oved distortion on a 5 V supply, bias current may be increased by adding a large pull up resistor , R5, of approximately 75 kΩ in parallel with the feedback capacitor. Biasing through TAT 7457 Feedback Resistor 0.1uF APPLICATION SCHEMATIC FIG. 1 VNA Bias Tee 0 2 4 6 Frequency (GHz) TAT7457 Open Loop Gain in 75 ohms S21 (dB) -30 -25 -20 -15 -10 Return Losses (dB) DB(|S(2,1)|) (L) No Feedback DB(|S(2,2)|) (R) No Feedback DB(|S(1,1)|) (R) No Feedback 5v, 105mA Bias Network large Cascode RFIC Schematic Simplified

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 10 of 14 - www.qorvo.com Pin Configuration and Description Top View Pin Number Label Description

1 RF IN RF Input

2 GND Internally Not Connected

3 RF OUT/VDD RF Output

Backside Paddle GND Ground. Use recommended via pattern to minimize inductance and thermal resistance. See PCB Mounting Pattern for suggested footprint. RF IN GND RF OUT / VDD 1 2 3 Backside Paddle - GND External feedback circuit for gain and return loss adjustment.

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 11 of 14 - www.qorvo.com Package Dimensions

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 12 of 14 - www.qorvo.com Package Marking

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 13 of 14 - www.qorvo.com PCB Mounting Pattern Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35 mm (#80/.0135”) diameter drill and have a final, plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction.

75Ω pHEMT Adjustable Gain RF Amplifier Data Sheet –Rev A, August 23, 2021 Subject to change without notice | All rights reserved - 14 of 14 - www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1C (2000V) ESDA / JEDEC JS-001-2014 ESD – Charged Device Model (CDM) Class C3 (>1000V) JEDEC JESD22-C101F MSL– Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-020 Solderability Solder profiles available upon request. Contact plating: NiPdAu RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electr ical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:

  • Lead Free
  • Halogen Free (Chlorine, Bromine)
  • Antimony Free
  • TBBP-A (C15H12Br402) Free
  • PFOS Free
  • SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: 1-844-890-8163 Web: www.qorvo.com Email: customer.support@qorvo.com Important Notice The information contained in this Data Sheet and any associated documents (“Data Sheet Information”) is believed to be reliable; however, Qorvo makes no warranties regarding the Data Sheet Information and assumes no responsibility or liability whatsoever for the use of said information. All Data Sheet Information is subject to change without notice. Customers should obtain and verify the latest relevant Data Sheet Information before placing orders for Qorvo® products. Data Sheet Information or the use thereof does not grant, explicitly, implicitly or otherwise any rights or licenses to any third party with respect to patents or any other intellectual property whether with regard to such Data Sheet Information itself or anything described by such information. DATA SHEET INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo® products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Applications described in the Data Sheet Information are for illustrative purposes only. Customers are responsible for validating that a particular product described in the Data Sheet Information is suitable for use in a particular application. © 2021 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc. | QORVO® is a registered trademark of Qorvo US, Inc. Pb