1095829

TGA2595-CP QORVO | Alldatasheet

Document overview

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• PDF pages: 14

Technical content

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 1 of 14 - www.qorvo.com Product Description Qorvo’s TGA2595 -CP is a balanced Ka -Band power amplifier fabricated on Qorvo’s QGaN15 0.15 um GaN on SiC process. The balanced configuration supports low return loss and improves robustness into non -ideal loads. Operating from 27.5 to 31 GHz, the TGA2595-CP achieves 39 dBm saturated output power with power-added efficiency of > 22 % and power gain of 21 dB. The TGA2595 -CP is packaged in a 10 -lead 15 x 15 mm bolt-down package with a Cu base for superior thermal management. To simply system integration, the TGA2595- CP is fully matched to 50 ohms with integrated DC blocking capacitors on both I/O ports. The TGA2595-CP is ideally suited for both commercial and defense satellite communications. Lead free and RoHS compliant. Functional Block Diagram Product Features

• Frequency Range: 27.5 – 31 GHz
• POUT: 39 dBm (PIN = 18 dBm)
• PAE: > 22 % (PIN = 18 dBm)
• Power Gain: 21 dB (PIN = 18 dBm)
• IM3 @ 30 dBm/Tone = −27 dBc
• IM5 @ 30 dBm/Tone = −46 dBc
• Bias: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical
• Package Dimensions: 15.2 x 15.2 x 5.2 mm
• Package base is pure Cu offering superior thermal management

Applications

• Satellite Communications

Ordering Information

Part No. Description TGA2595-CP 27.5 – 31 GHz 8 W GaN Power Amplifier

1095829 TGA2595-CP Evaluation Board

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 2 of 14 - www.qorvo.com Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 29.5 V Gate Voltage Range (VG) −5 to 0 V Drain Current (ID) 2.8 A Gate Current (IG) See plot at page 10 Power Dissipation (PDISS), 85 °C 48 W Input Power, CW, 50 Ω, (PIN) 30 dBm Input Power, CW, VSWR 6:1, VD = +22 V, 85 °C, (PIN) 25 dBm Channel Temperature (TCH) 275 °C Soldering Temperature (30 Seconds) 260 °C Storage Temperature −55 to 150 °C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Min Typ. Max Units Drain Voltage (VD) +20 V Drain Current, (IDQ) 560 mA Drain Current, RF (ID_Drive) See chart page 5 mA Gate Voltage Range (VG) −2 to -2.9 V Gate Current, RF (IG_Drive) See chart page 5 mA TBASE Range −40 +85 ºC Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 27.5 – 31 GHz Small Signal Gain – > 25 – dB Input Return Loss – > 12 – dB Output Return Loss – > 13 – dB Output Power (at PIN = 18 dBm) – 39 – dBm Power Added Efficiency (at PIN = 18 dBm) – > 22 – % Power Gain (at PIN = 18 dBm) – 21 – dB IM3 @ 30 dBm/Tone – −27 – dBc IM5 @ 30 dBm/Tone – −46 – dBc Output Power Temperature Coefficient (25 °C to 85 °C only) – −0.01 – dBm/°C Recommended Operating Voltage – 20 22 V Test conditions unless otherwise noted: 25 °C, VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical.

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 3 of 14 - www.qorvo.com Typical Performance – Large Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW. 27 28 29 30 31 32 Output Power (dBm) Frequency (GHz) Output Power vs. Freq. vs. VD Pin = 18 dBm, Temp = 25 °C 20 V 22 V 27 28 29 30 31 32 Output Power (dBm) Frequency (GHz) Output Power vs. Freq. vs. Temp. Temp = 25 °CPin = 18 dBm 25 °C 85 °C -40 °C -12 -8 -4 0 4 8 12 16 20 24 Output Power (dBm) Input Power (dBm) Output Power vs. Input Power vs. Temp. Frequency = 29 GHz 25 °C 85 °C -40 °C -12 -8 -4 0 4 8 12 16 20 24 Output Power (dBm) Input Power (dBm) Output Power vs. Input Power vs. Freq. Temp = 25 °CTemp = 25 °C

29 GHz

31 GHz

27.5 GHz

-12 -8 -4 0 4 8 12 16 20 24 Output Power (dBm) Input Power (dBm) Output Power vs. Input Power vs. IDQ Frequency = 29 GHz, Temp = 25 °C 420 mA 560 mA 280 mA

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 4 of 14 - www.qorvo.com Typical Performance – Large Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW. 27 28 29 30 31 32 Power Added Efficiency (%) Frequency (GHz) PAE vs. Frequency vs. IDQ Pin = 18 dBm, Temp = 25 °C 420 mA 560 mA 280 mA 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 27 28 29 30 31 32 Gain (dB) Frequency (GHz) Power Gain vs. Frequency vs. IDQ Pin = 18 dBm, Temp = 25 °C 420 mA 560 mA 280 mA 27 28 29 30 31 32 Power Added Efficiency (%) Frequency (GHz) PAE vs. Freq. vs. Temp. Temp = 25 °CPin = 18 dBm 25 °C 85 °C -40 °C 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 27 28 29 30 31 32 Gain (dB) Frequency (GHz) Power Gain vs. Freq. vs. Temp. Pin = 18 dBm 25 °C 85 °C -40 °C -12 -8 -4 0 4 8 12 16 20 24 Power Added Efficiency (%) Input Power (dBm) PAE vs. Input Power vs. Temp. Frequency = 29 GHz 25 °C 85 °C -40 °C -12 -8 -4 0 4 8 12 16 20 24 Gain (dB) Input Power (dBm) Power Gain vs. Input Power vs. Temp. Frequency = 29 GHz 25 °C 85 °C -40 °C

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 5 of 14 - www.qorvo.com Typical Performance – Large Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW. 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 27 28 29 30 31 32 Drain Current (A) Frequency (GHz) Drain Current vs. Frequency vs. VD Pin = 18 dBm, Temp = 25 °C 20 V 22 V -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 27 28 29 30 31 32 Gate Current (mA) Frequency (GHz) Gate Current vs. Frequency vs. VD Pin = 18 dBm, Temp = 25 °C 20 V 22 V 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 27 28 29 30 31 32 Drain Current (A) Frequency (GHz) Drain Current vs. Freq. vs. Temp. Pin = 18 dBm 25 °C 85 °C -40 °C 27 28 29 30 31 32 Gate Current (mA) Frequency (GHz) Gate Current vs. Freq. vs. Temp. Pin = 18 dBm, IG current limit set to 35 mA 25 °C 85 °C -40 °C 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -12 -8 -4 0 4 8 12 16 20 24 Drain Current (A) Input Power (dBm) Drain Current vs. Input Power vs. Temp. Frequency = 29 GHz 25 °C 85 °C -40 °C -12 -8 -4 0 4 8 12 16 20 24 Gate Current (mA) Input Power (dBm) Gate Current vs. Input Power vs. Temp. Frequency = 29 GHz, IG current limit set to 35 mA 25 °C 85 °C -40 °C

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 6 of 14 - www.qorvo.com Performance Plots – Large Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW. 22 24 26 28 30 32 34 36 38 40 Phase Delta (degrees) Output Power (dBm) AM-PM (Delta) vs. Output Power vs. Temp. Freq. = 29 GHz +85 °C +25 °C -18 -16 -14 -12 -10 22 24 26 28 30 32 34 36 38 40 Phase Delta (degrees) Output Power (dBm) AM-PM (Delta) vs. Output Power vs. Temp. Freq. = 29 GHz, IDQ = 280 mA +85 °C +25 °C -25 -20 -15 -10 22 24 26 28 30 32 34 36 38 40 Phase (degrees) Output Power (dBm) AM-PM vs. Output Power vs. Temp. Freq. = 29 GHz +85 °C +25 °C -15 -10 22 24 26 28 30 32 34 36 38 40 Phase (degrees) Output Power (dBm) AM-PM vs. Output Power vs. Temp. Freq. = 29 GHz, IDQ = 280 mA +85 °C +25 °C -180 -140 -100 -60 -20 100 140 180 26 28 30 32 34 Phase (degrees) Frequency (GHz) AM-PM vs. Frequency vs. PIN Temp = 25 °C 20 dBm 18 dBm 16 dBm 0 dBm -180 -140 -100 -60 -20 100 140 180 26 28 30 32 34 Phase (degrees) Frequency (GHz) AM-PM vs. Frequency vs. PIN Temp = 25 °C, IDQ = 280 mA 20 dBm 18 dBm 16 dBm 0 dBm

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 7 of 14 - www.qorvo.com Typical Performance – Linearity Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW. -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 5 10 15 20 25 30 35 IM3 (dBc) Output Power per Tone (dBm) IM3 vs. Output Power vs. Frequency

10 MHz Tone Spacing, Temp = 25 °C

27 GHz

-85 -80 -75 -70 -65 -60 -55 -50 -45 -40 5 10 15 20 25 30 35 IM5 (dBc) Output Power per Tone (dBm) IM5 vs. Output Power vs. Frequency -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 5 10 15 20 25 30 35 IM3 (dBc) Output Power per Tone (dBm) IM3 vs. Output Power vs. Temp.

10 MHz Tone Spacing,

Freq = 29 GHz 25 °C 85 °C -40 °C -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 5 10 15 20 25 30 35 IM5 (dBc) Output Power per Tone (dBm) IM5 vs. Output Power vs. Temp. 25 °C 85 °C -40 °C Freq = 29 GHz -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 5 10 15 20 25 30 35 IM3 (dBc) Output Power per Tone (dBm) IM3 vs. Output Power vs. IDQ Freq = 29 GHz, Temp = 25 °C 560 mA 420 mA 280 mA -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 5 10 15 20 25 30 35 IM5 (dBc) Output Power per Tone (dBm) IM5 vs. Output Power vs. IDQ 560 mA 420 mA 280 mA Freq = 29 GHz, Temp = 25 °C

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 8 of 14 - www.qorvo.com Typical Performance – Small Signal Conditions unless otherwise specified: VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical, CW. 27 28 29 30 31 S21 (dB) Frequency (GHz) Gain vs. Frequency vs. Temperature -40 °C 25 °C 85 °C 27 28 29 30 31 S21 (dB) Frequency (GHz) Gain vs. Frequency vs. Drain Current 420 mA 560 mA 280 mA -30 -25 -20 -15 -10 27 28 29 30 31 S11 (dB) Frequency (GHz) IRL vs. Frequency vs. Temperature -40 °C 25 °C 85 °C -30 -25 -20 -15 -10 27 28 29 30 31 S11 (dB) Frequency (GHz) IRL vs. Frequency vs. Drain Current 420 mA 560 mA 280 mA -30 -25 -20 -15 -10 27 28 29 30 31 S22 (dB) Frequency (GHz) ORL vs. Frequency vs. Temperature -40 °C 25 °C 85 °C -30 -25 -20 -15 -10 27 28 29 30 31 S22 (dB) Frequency (GHz) ORL vs. Frequency vs. Drain Current 420 mA 560 mA 280 mA

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 9 of 14 - www.qorvo.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC) (1) CW, VD = +20 V, IDQ = 560 mA, TBASE = 85 °C PDISS =11.2 W 2.23 °C/W Channel Temperature (TCH) (Quiescent) (2) 110 °C Thermal Resistance (θJC) (1) VD = +20 V, IDQ = 280 mA, TBASE = 85 °C, Freq = 30 GHz, PIN = 18 dBm, POUT = 37.2 dBm, PDISS = 21.7 W, ID_Drive = 1.38 A 2.40 °C/W Channel Temperature (TCH) (under RF) (2) 137 °C Thermal Resistance (θJC) (1) VD = +20 V, IDQ = 560 mA, TBASE = 85 °C, Freq = 30 GHz, PIN = 18 dBm, POUT = 38.3 dBm, PDISS = 24.9 W, ID_Drive = 1.58 A 2.45 °C/W Channel Temperature (TCH) (RF drive) (2) 146 °C Notes: 1. Thermal resistance is referenced to the back of package (85 °C) 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Dissipated Power and Maximum Gate Current 100 120 140 160 120 130 140 150 160 170 180 190 200 210 220 230 Maximum Gate Current (mA) Channel Temperature (°C) Ig_max vs. TCH 27 28 29 30 31 32 PDISS (W) Frequency (GHz) Dissipated Power vs. Freq. vs. Temp. Pin = 18 dBm 25 °C 85 °C -40 °C 27 28 29 30 31 32 PDISS (W) Frequency (GHz) Dissipated Power vs. Freq. vs. IDQ Pin = 18 dBm, T = 85 °C 560 mA 280 mA

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 10 of 14 - www.qorvo.com Applications Information and Pin Layout Bias Up Procedure 1. Set ID limit to 2 A, IG limit to 35 mA 2. Apply −5 V to VG 3. Apply +20 V to VD; ensure IDQ is approx. 0 mA 4. Adjust VG until IDQ = 560 mA (VG ~ −2.5 V Typ.). 5. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA 3. Set VD to 0 V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pad No. Symbol Description 1,5 VG Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above.

3 RFIN Input; matched to 50 Ω; DC blocked

2,4,7,9 GND Must be grounded on the PCB. 6,10 VD Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above.

8 RFOUT Output; matched to 50 Ω; DC blocked

8 RF OUTRF IN 3

0.1 uF 0.1 uF C12 10 uF C11 0.1 uF 0.1 uF 10 uF

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 11 of 14 - www.qorvo.com Assembly Drawing PCB NOTES: (1) Both Top and Bottom Vd and Vg must be biased. (2) This PCB is non-standard, and requires PCB trace modification for 30 GHz performance optimization. See Gerber files for detailed information. Bill of Materials Reference Des. Value Description Manuf. Part Number C2, C5, C8, C11 0.1 μF Cap, 0603, +50 V, 10 %, X7R Various – C3, C6, C9, C12 (1) 10 μF Cap, 1206, +50 V, 20 %, X5R Various – Notes: 1. Capacitors in drain path should be removed for pulsed operation. Vg GND VD Vg GND VD GND C6 C8 C11 C12 GND

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 12 of 14 - www.qorvo.com Assembly Notes 1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully. 2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the package. 3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz., then torque to final value. Use the following tightening pattern: 4. Apply no-flux solder to each pin of the TGA2595-CP. The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after soldering is recommended.

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 13 of 14 - www.qorvo.com Mechanical Information and Marking Units: inches Tolerances unless specified: x.xxx = ± 0.005 Materials: Base: Copper Lead: Alloy 194 Lid: Plastic All metalized features are gold plated Part is epoxy sealed Marking: 2595: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID

27.5 – 31 GHz 8 W GaN Power Amplifier Data Sheet Rev. D February 27, 2019 - 14 of 14 - www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1A ANSI/ESD/JEDEC JS-001 ESD – Charge Device Model (CDM) Class C2 JESD22-C101 MSL – Moisture Sensitivity Level N/A Blank, null, no content Solderability Compatible with the latest version of J-STD-020, Lead-free solder, 260 °C RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.