TAT7467E1F QORVO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 13

Technical content

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 1 of 12 - www.qorvo.com Product Description The TAT7467E1F is a 75 /uni2006Ω, fully integrated, single- die differential RF Amplifier covering medium power applications in the CATV band. The TAT7467E1F inclu des on-chip linearization to improve 3 rd order distortion performance while maintainin g low power consumption on a +5 /uni2006V supply. It is fabricated using 6 inch GaAs pHEMT technology to optimize performance and cost. Product Features

  • 50–1218 /uni2006MHz Bandwidth
  • 75 /uni2006Ω Impedance
  • pHEMT Device Technology
  • Meets DOCSIS 3.1 Output Requirements
  • +5 /uni2006V Supply Voltage
  • 380 /uni2006mA Current Consumption
  • On-chip Linearization
  • SOIC-8 package

Applications

  • Replacement for +5 /uni2006V SOIC-8 Amplifiers
  • Edge QAM Output Stage
  • MDU Output
  • Distribution Amplifiers
  • Transmitter Driver Amplifier Functional Block Diagram Pin Configuration Pin No. Label

1 RF IN A

2 LIN A

3 LIN B

4 RF IN B

5 RF OUT B / V DD

6 Bias 2

7 Bias 1

8 RF OUT A / V DD

Ordering Information

Part No. Description TAT7467E1F 75 Ω Dual pHEMT Amplifier TAT7467E1F–EB Amplifier Evaluation Board Standard T/R size = 1000 pieces on a 7” reel

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 2 of 12 - www.qorvo.com Absolute Maximum Ratings Parameter Rating Supply Voltage (V DD ) +10 /uni2006V Storage Temperature −60 to +150 /uni2006° C Operating Temperature −40 to +85 /uni2006° C Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units VDD +5.0 V IDD (Total EVB current) 380 mA Tj for >10 6 hours MTTF +145 ° C Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1218 MHz Gain 18 dB Gain Flatness Peak deviation from straight line across full band. ±0.75 dB Noise Figure 4.7 dB Input Return Loss 15 dB Output Return Loss 16 dB EQAM Output Out-of-band Spurious and Noise for single channel on a single port /uni2006 VOUT = 62 /uni2006dBmV / ch adjacent, See Notes 2, 3, and 4 −62 dBc P1dB +25 dBm OIP3 POUT =+12 /uni2006dBm / tone, ∆f=10 /uni2006MHz +43 dBm Equivalent Harmonics See Note 5 -63 dBc VDD +5 V IDD (Total current of Test Circuit) See Note 7 380 mA Bias 2 (Vset range to adjust I DD ) 4 5 V Thermal Resistance θjc (jct. to case) 14.5 ° C/W Notes: 1. Test conditions unless otherwise noted: 75 Ω impedance, VDD = +5 /uni2006V, I DD = 380 /uni2006mA fixed by Vset /uni20067 from +4 /uni2006V to +4.7 /uni2006V, T A = +25° /uni2006C 2. Production tested at 66 /uni2006MHz, 330 /uni2006MHz, and 990 /uni2006MHz. 3. Adjacent channel 1 (750 /uni2006kHz from channel block edge to 6 /uni2006MHz from channel block edge). 4. Adjacent channel 2 (6 /uni2006MHz from channel block edge to 12 /uni2006MHz from channel block edge). 5. Spurious and noise levels in channels coinciding with 2 nd harmonic or 3 rd harmonic. 6. Recommended application circuit uses active bias described on page 6. 7. Test Circuit, page 3, can be used for evaluation with some variation in I DD when Vset is a fixed voltage between +4 to +4.7 /uni2006V adjusted by R21. Variation to I DD may change some performance parameters.

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 3 of 12 - www.qorvo.com TAT7467E1F–EB Evaluation Board (Test Circuit) R15 L1 C2 C1 +5V IDD = 380mA VX C18 C19 RF OUTPUT C15 Vset VX C17 C16 R12 R13 C21 RF INPUT C10 R14 Isense R22 R23 R21 Vset C13 Backside Paddle C14 Vset Adj for IDD = 380mA Iset=approx 70mA L I N 4 5 1 2 1 2

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 4 of 12 - www.qorvo.com Reference Designator Description Manufacturer Part Number PAD Sil Pad for Heatsink various BLOCK HEATSINK U1 TAT7467E1F Qorvo C1, C2 CAP, 0402, 0.1uF, 10%, 10V Panasonic Corp of North America ECJ-0EB1A104K C18, C19 CAP, 0402, 270 pF, 10%, 50V Panasonic Corp of North America ECJ-0EB1H271K C5, C6, C7, C13, C14, C17 CAP, 0402, 0.01uF, 10%, 16V, XR7 Panasonic Corp of North America ECJ-0EB1C103K C3, C4, C10, C15, C16 CAP, 0402, 0.5pF +/-0.25pF, 50V Murata GRM1555C1HR50CZ01D R12, R13 RES, 0402, 1.21K /uni2006Ω, 1%, 1/16W Panasonic Corp of North America ERJ-2RKF1211X R22, R23 RES, 0402, 1.5 /uni2006Ω, 1%, 1/16W Yaego RC0402FR-071R5L R14 RES, 0402, 750 /uni2006Ω, 1%, 1/16W VISHAY-DALE CRCW0402750RFKED R15 RES, 1206, 1 /uni2006Ω, 5% Panasonic Corp of North America ERJ-8GEYJ1R0V R21 RES, 1206, 12 /uni2006Ω, 5%, 1/4W Panasonic Corp of North America ERJ-8GEYJ120V L4 IND, 0402, 5.6nH, 5%, W/W Coilcraft, Inc. 0402CS-5N6XJLW L5 IND, 0402, 2.7nH, 5%, W/W Coilcraft, Inc. 0402CS-2N7XJLW L1 IND, 1008, 0.9uH, 10%, 1.3A, Ferrite Coilcraft, Inc. 1008AF-901XKL L2, L3 IND, 1206, 500nH, 10%, 260mA, Ferrite Murata LQH31HNR50K03 B1, B2 Bead, Chip Ferrite, 0402, 600 /uni2006Ω, 300mA Murata BLM15AG601SN1D T1, T2 XFMR, SMT, 75 /uni2006Ω, CD542, 1:1 Mini-Circuits TC1-33-75G2+ J3 Header Pin, 2 POS, 0.1”, RA, SMT Molex 022-28-8021 J1, J2 Conn, 75 /uni2006Ω, Edge Launch F Lighthorse Technologies LTI-FSF55MGT-P-10A-X7 S1, S2, S3, S4, S5, S6 Screw, 4-40, ¼”, Phillips, Pan HD, SEMS McMaster-Carr Supply Company 90403A106 C8, C9, C21 Not Populated Item Dummy Part Bill of Material–TAT7467E1F

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 5 of 12 - www.qorvo.com TAT7467E1F-EB Evaluation Board TAT7467E1F–EB Evaluation Board

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 6 of 12 - www.qorvo.com Application Circuit with Active Bias Notes: 1. EVB Nominal I DD current is 380 mA Bill of Material: Active Bias Section Reference Designator Description Manufacturer Part Number U1 Rail-Rail Op-Amp On Semi LM7301 U3 Adjustable shunt voltage regulator TI LM431 Q1 General purpose transistor (pnp) Various C1, C2, C8 CAP, 0402, 0.1uF, 16V, 10% Various C11, C12, C13, C14, C15 CAP, 0402, 10.01uF, 6V, 10% Various R6 RES, thick film, 1206, 1 /uni2006Ω, 5% Various R7, R8, R9 RES, thick film, 0402, 10.0k /uni2006Ω, 1/16 W, 1% Various R10 RES, thick film, 0402, 5.6k /uni2006Ω, 1/16 W, 1% Various R11 RES, thick film, 0402, 100 /uni2006Ω, 5% Various R15 No Load L1 IND, High Current, 1008, 0.9uH, 10% Coilcraft 10 08AF-901XKL C B E - Vcc Vee VX +5V C12 INPUT A INPUT B OUTPUT A OUTPUT B LINA L I N PADDLE BACKSIDE SOIC-8 TAT 7467H - + VDRIVE BIAS1 380mA BIAS2 C13 ISENSE TC1-33-75G2+ RF OUTPUT TC1-33-75G2+ RF INPUT R12 R13 R22 C11 C14 C17 C18 C19 C21 U2 T1 T2 LINB C15 C16 R23 R14 C4 C9 C10 VCC VCC LMV431 SOT23-5 ISENSE MMBT2907A Rail-Rail Dual Op Amp 1.24V VX ACTIVE BIAS C1 C2 VDRIVE R10 R11 R15 No Load

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 7 of 12 - www.qorvo.com Performance Plots Notes: 1. V DD = +5 /uni2006V, I DD = 380 /uni2006mA, T A= +25° /uni2006C 0 250 500 750 1000 1250 S21 (dB) Frequency (MHz) Gain +85° C +25° C −40° C -60 -50 -40 -30 -20 0 250 500 750 1000 1250 S12 (dB) Frequency (MHz) Isolation -50 -40 -30 -20 -10 0 250 500 750 1000 1250 S11 (dB) Frequency (MHz) Input Return Loss +85° C +25° C −40° C -50 -40 -30 -20 -10 0 250 500 750 1000 1250 S22 (dB) Frequency (MHz) Output Return Loss +85° C +25° C −40° C 0 250 500 750 1000 1250 NF (dB) Frequency (MHz) Noise Figure +85° C +25° C −40° C -76 -72 -68 -64 -60 0 250 500 750 1000 1250 ACPR (dBc) Frequency (MHz) ACPR vs Frequency at Docsis+2 ACPR3 ACPR2 ACPR1

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 8 of 12 - www.qorvo.com Typical Performance Plots (cont.) Notes: 1. VDD = +5 V, I DD = 380 mA, T A= +25° C -100 -90 -80 -70 -60 0 200 400 600 800 1000 1200 2nd & 3rd Harmonics (dBc) Frequency (MHz) Harmonics at Docsis+2 -40C 25C 85C 0 250 500 750 1000 1250 OIP3 (dBm) Frequency (MHz) OIP3 0 250 500 750 1000 1250 P1dB (dBm) Frequency (MHz) P1dB -74 -70 -66 -62 0 200 400 600 800 1000 ACPR1 (dBc) Frequency (MHz) ACPR1 vs Temperature at Docsis+2 +85° C +25° C −40° C

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 9 of 12 - www.qorvo.com Pin Configuration and Description RF IN A LIN A LIN B RF IN B RF OUT A/VDD Bias 1 Bias 2 RF OUT B/VDD Backside pad – RF/DC GND Pin 1 Reference Mark Linearizer Pin No. Label Description 1 RF IN A RF Input A. DC blocking capacitor required. 2 LIN A Linearizer A. Recommend using 1.21K resistors to ground for optimal on- chip linearizer current setting. 3 LIN B Linearizer B. Recommend using 1.21K resistors to ground for optimal on- chip linearizer current setting. 4 RF IN B RF Input B. DC blocking capacitor required. 5 RF OUT B / V DD RF Output B. DC blocking capacitor required. 6 Bias 2 IDD adjust. Set for 380mA, approx. Pin 6 draws approx. 70mA 7 Bias 1 Output stage common source node. Current sense line for active bias. 8 RF OUT A / V DD RF Output A. DC blocking capacitor required. Backside Pad RF/DC GND Ground Slug

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 10 of 12 - www.qorvo.com Detailed Device Description The TAT7467E1F is a flexible +5 /uni2006V differential amplifier for medium power CATV appl ications. The amplifier of the TAT7467E1F was specifically designed to work with o n-chip linearization to provide 3 rd order distortion improvement over a wide range of RF power levels and across the full CATV bandwidth. Operation of the linearizer will n ot affect ov erall gain by more than 0.7 /uni2006dB. For any amplifier bias current, output 3 rd order distortion may be improved by adjusting a sm all bias current of the on- chip linearization circuit. The Application Schematic sh ows resistors setting the linearizer currents. Alte rnate linearizer drive circuitry is possible; consult Qorvo for discussion. Bias current may be adjusted with changes to external components making the TAT7467E1F ideal for both input and output gain stages in an EdgeQAM amplifier line-up. For ou tput stage applications, bias currents of between 3 00 /uni2006mA to 400 /uni2006mA are recommended. For input stage applications, bias currents of 230 /uni2006mA to 280 /uni2006mA are recommended. Active bias circui ts, like the one shown on page 6 of this datasheet, may be used to achieve greater control over the bias current. The TAT7467E1F is built using a single die, which significantly improves its resulting circuit balance and corresponding 2 nd order distortion performance. For best 2 nd order performance, an input balun using a 3 rd wire construction may be used to improve the input phase balance going into the TAT7 467E1F. The TAT7467E1F is packaged in an industry standard SOIC-8 package with a large exposed paddle to enabl e good heat flow to a backside heatsink. At the maximum recommended bias current of 400 /uni2006mA the power consumption will be 2 /uni2006W. The TAT7467E1F is fabricated using a mature pHEMT process that has demonstrated outstanding reliability performance o n other Qorvo products. Please use contact information section to consult Qorvo for further information.

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 11 of 12 - www.qorvo.com Package Marking and Dimensions PCB Mounting Pattern Notes: 1. All dimensions are in millimeters. Angles are i n degrees. 2. Use 1 oz. copper minimum for top and bottom laye r metal. 3. Vias are required under the backside paddle of t his device for proper RF/DC grounding and thermal dissipation. 5. Ensure good package backside paddle solder attac h for reliable operation and best electrical performance.

CATV 75 /uni2006Ω pHEMT Dual RF Amplifier Data Sheet-Rev E, June 5, 2017 | Subject to change without notice - 12 of 12 - www.qorvo.com Solderability Compatible with both lead-free (260 /uni2009° C maximum reflow temperature) and tin/lead (245 /uni2009° C maximum reflow temperature) soldering processes. Contact plating: Ni, Pd, & Au Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD /uni2006– /uni2006Human Body Model (HBM) Class 1B ESDA /uni2009/JEDEC JS-001-2012 ESD /uni2006– /uni2006Charged Device Model (HBM) Class C3 JEDEC JESD22-C101F MSL /uni2006– /uni2006Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-020 RoHS Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restri ctions on the Use of Certain Hazardous Substances i n Electrical and Electronic Equipment).

  • Lead Free
  • Halogen Free (Chlorine, Bromine)
  • Antimony Free
  • TBBP-A (C 15 H12 Br 402) Free
  • PFOS Free
  • SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: 1-844-890-8163 Web: www.qorvo.com Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regard ing the information con tained herein and assumes no responsibility or liability w hatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Custome rs should obtain and verify the latest relevant inf ormation before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explic itly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such inform ation itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO T HE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARR ANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURS E OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical componen ts in medical, life-saving, or life-sustaining applications, or ot her applications where a failure would reasonably be ex pected to cause severe personal injury or death. Copyright 2017 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

Printed copy of this document is considered an uncontrolled copy; unless control copy designator is identified. QQ QQoo oorr rrvv vvoo oo,, ,, II IInn nncc cc.. .. –– –– CC CCoo oonn nnff ffii iidd ddee eenn nntt ttii iiaa aall ll && && PP PPrr rroo oopp pprr rrii iiee eett ttaa aarr rryy yy II IInn nnff ffoo oorr rrmm mmaa aatt ttii iioo oonn nn TT TTee eemm mmpp ppll llaa aatt ttee ee:: :: FOR-000469 Rev D TAT7467E1F Product Datasheet DAT.TAT7467E1F Rev. E Page 11 11 of 11 11 Revision History Revision History Revision History Revision History Rev. Rev. Rev. Rev. Date Date Date Date ECN# ECN# ECN# ECN# (Hillsboro Only) Description of Change Description of Change Description of Change Description of Change WEBMASTER POSTING INSTRUCTIONS TO PUBLIC WEBSITE Email* Info Link Only 1st page only Full Data Sheet Answer YES in one column only OR NO** all 3 columns A 12-11-14 90048 Original Documentation (A.Sardar) No No Yes B 02-02-15 90832 Added active bias circuit and associated BOM, added Pin Configuration section, updated functional block diagram. (A. Sardar, C. Blum) No No Yes C 02-23-15 91275 Declare test condition to I DD =380mA for Electrical specs, limit Vset control range from 4 to 6V for Idd to a 4 to 4.7V (5V max) to be compatible with 5V active bias application circuit, referenced test circuit on page 3 to Electrical specs. Added test conditions to all performance plots, declared them as typical. Updated package marking & dimensi ons per OUT.308, added PCB mounting pattern (T. Cummings) No No Yes D 10-08-15 96531 Updated data sheet to dual branding. Update package dimensions and marking. Corrected pin description table. Pin 1 mislabeled. Added C21 to EVB BOM. Corrected Functional Block Diagram. Pin 1 mislabeled. Corrected typos. No No Yes E 06-05-17 17-16773 Updated to Qorvo format. Updated EVB BOM. (D.Fun) No No Yes CONTROLLED DISTRIBUTION: 03 (Hillsboro Only)