T2G6003028-FS

T2G6003028-FS QORVO | Alldatasheet

Document overview

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Technical content

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 1 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com

Applications

• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers Product Features
• Frequency: DC to 6 GHz
• Output Power (P 3dB ): 42.7 W at 3 GHz
• Linear Gain: >14 dB at 3 GHz
• Operating Voltage: 28 V
• Low thermal resistance package Functional Block Diagram Pin Configuration Pin No. Label

1 VD / RF OUT

2 VG / RF IN

The Qorvo T2G6003028-FS is a 30W (P 3dB ) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with Qorvo’s proven Q GaN25 process, which features advanced field plate technique s to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line- ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request.

Ordering Information

T2G6003028-FS EAR99 Packaged part Flangeless T2G6003028-FS- EVB1 EAR99 5.4 – 5.9 GHz Evaluation Board T2G6003028-FS- EVB2 EAR99 1.3 – 1.9 GHz Evaluation Board

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 2 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Absolute Maximum Ratings Parameter Value Breakdown Voltage (BV DG ) 100 V Gate Voltage Range (V G) -7 to 0 V Drain Current (I D) 5.5 A Gate Current (I G) -10 to 28 mA Power Dissipation (P D) 47.5 W RF Input Power, CW, T = 25° C (P IN ) 40 dBm Channel Temperature (T CH ) 275 ° C Mounting Temperature (30 Seconds) 320 ° C Storage Temperature -40 to 150 ° C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions (1) Parameter Value Drain Voltage Range (V D) 12 - 40 V Drain Quiescent Current (I DQ ) 200 mA (Typ.) Peak Drain Current ( I D) 1.7 A (Typ.) Gate Voltage (V G) -3.3 V (Typ.) Channel Temperature (T CH ) 225 ° C (Max) Power Dissipation, CW (P D) 35 W (Max) Power Dissipation, Pulse (P D) (2) 40 W (Max) 1. Electrical specifications are measured at specif ied test conditions. Specifications are not guaranteed over all recommended operating conditions. 2. Pulse Width = 380 uS, Duty Cycle = 50% RF Characterization – Optimum Power Tuned Load Pull Performance Test conditions unless otherwise noted: T = 25° C. Parameter Typical Value Units Frequency (F) 1 2 3 4 5 6 GHz Drain Voltage (V D) 28 28 28 28 28 28 V Bias Current (I DQ ) 200 200 200 200 200 200 mA 54.7 % Notes: 1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, D uty Cycle = 20% 2. Characteristic Impedance (Zo) = 10 Ω. See pg. 18 for Load Pull Reference Planes. RF Characterization – Optimum Efficiency Tune Load Pull Performance Test conditions unless otherwise noted: T = 25° C. Parameter Typical Value Units Frequency (F) 1 2 3 4 5 6 GHz Drain Voltage (V D) 28 28 28 28 28 28 V Bias Current (I DQ ) 200 200 200 200 200 200 mA PAE @ P 3dB (PAE 3dB ) 73 76 46.1 65.1 69.5 60 % Notes: 1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, D uty Cycle = 20%. 2. Characteristic Impedance (Zo) = 10 Ω. See pg. 18 for Load Pull Reference Planes.

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 3 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com RF Characterization – Performance at 5.6 GHz (1, 2) Symbol Parameter Min Typical Max Units GLIN Linear Gain 12.0 14.0 17.0 dB P3dB Output Power at 3 dB Gain Compression 43.0 44.6 46.0 dBm DE 3dB Drain Efficiency at 3 dB Gain Compression 45.0 54.0 70.0 % G3dB Gain at 3 dB Compression 9.0 11.0 14.0 dB Notes: 1. Performance at 5.6 GHz in the 5.4 to 5.9 GHz Evaluation Board 2. VDS = 28 V, I DQ = 200 mA; Pulse: 100µs, 20% RF Characterization – Mismatch Ruggedness at 5.6 GH z (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 200 mA Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1 Notes: 1. P1dB CW Input Power under matched condition.

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 4 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Thermal and Reliability - CW (1) Parameter Test Conditions Value Units Thermal Resistance, θJC PD = 30 W, Tbase = 85° C 3.82 ° C/W Maximum Channel Temperature, T CH 200 ° C Median Lifetime, T M 1.54E7 Hrs Thermal Resistance, θJC PD = 35 W, Tbase = 85° C 4.01 ° C/W Maximum Channel Temperature, T CH 225 ° C Median Lifetime, T M 1.80E6 Hrs Thermal Resistance, θJC PD = 40 W, Tbase = 85° C 4.22 ° C/W Maximum Channel Temperature, T CH 254 ° C Median Lifetime, T M 1.93E5 Hrs Thermal Resistance, θJC PD = 45 W, Tbase = 85° C 4.43 ° C/W Maximum Channel Temperature, T CH 284 ° C Median Lifetime, T M 2.41E4 Hrs Notes: 1. Thermal resistance calculated to bottom of packa ge. Thermal and Reliability - Pulsed (1) Parameter Test Conditions Value Units Thermal Resistance, θJC PD = 40 W, Tbase = 85° C Pulse Width = 100 uS Duty Cycle = 5% 2.33 ° C/W Peak Channel Temperature, T CH 178 ° C Median Lifetime, T M 2.52E9 Hrs Thermal Resistance, θJC PD = 40 W, Tbase = 85° C Pulse Width = 100 uS Duty Cycle = 10% 2.43 ° C/W Peak Channel Temperature, T CH 182 ° C Median Lifetime, T M 8.60E8 Hrs Thermal Resistance, θJC PD = 40 W, Tbase = 85° C Pulse Width = 100 uS Duty Cycle = 20% 2.68 ° C/W Peak Channel Temperature, T CH 192 ° C Median Lifetime, T M 1.65E8 Hrs Thermal Resistance, θJC PD = 40 W, Tbase = 85° C Pulse Width = 100 uS Duty Cycle = 50% 3.18 ° C/W Peak Channel Temperature, T CH 212 ° C Median Lifetime, T M 1.10E7 Hrs Notes: 2. Thermal resistance calculated to bottom of packa ge.

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 5 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Median Lifetime

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 6 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Maximum Channel Temperature 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 Peak Channel Temperature ( oC) Pulse Width (sec) Peak Channel Temperature Tbase = 85 oC, Pdiss = 40 W (4.0 W/mm) 5% Duty Cycle 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 7 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load Pull Smith Charts (1, 2, 3) Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 18 for load pull reference planes. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 1GHz, Load-pull 45.6 45.4 45.2 22.4 22.1 21.8 70.6 68.6 66.6

• • •• Max Power is 45.7dBm at Z = 8.696-2.126i ΩΩ ΩΩ ΓΓ ΓΓ = -0.0561-0.1201i
• • •• Max Gain is 22.8dB at Z = 4.451+3.146i ΩΩ ΩΩ ΓΓ ΓΓ = -0.3213+0.2877i
• • •• Max PAE is 73% at Z = 12.703+1.76i ΩΩ ΩΩ ΓΓ ΓΓ = 0.1243+0.0679i Zo = 10 ΩΩ ΩΩ 3dB Compression Referenced to Peak Gain Zs(fo) = 1.89+3.07i ΩΩ ΩΩ Power Gain PAE

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 8 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load Pull Smith Charts (1, 2, 3) Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 18 for load pull reference planes. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 2GHz, Load-pull 45.8 45.6 16.2 15.9 15.6 75.6 73.6 71.6

• • •• Max Power is 46dBm at Z = 3.96+1.293i ΩΩ ΩΩ ΓΓ ΓΓ = -0.4205+0.1315i
• • •• Max Gain is 16.3dB at Z = 4.839+4.569i ΩΩ ΩΩ ΓΓ ΓΓ = -0.2311+0.379i
• • •• Max PAE is 76% at Z = 5.745+6.305i ΩΩ ΩΩ ΓΓ ΓΓ = -0.0947+0.4384i Zo = 10 ΩΩ ΩΩ 3dB Compression Referenced to Peak Gain Zs(fo) = 2.2-0.59i ΩΩ ΩΩ Power Gain PAE

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 9 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load Pull Smith Charts (1, 2, 3) Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 18 for load pull reference planes. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 3GHz, Load-pull 46.3 46.1 45.9 11.7 11.4 11.1 74.2 72.2 70.2

• • •• Max Power is 46.3dBm at Z = 4.75-2.265i ΩΩ ΩΩ ΓΓ ΓΓ = -0.3247-0.2034i
• • •• Max Gain is 11.9dB at Z = 6.766+2.282i ΩΩ ΩΩ ΓΓ ΓΓ = -0.1712+0.1594i
• • •• Max PAE is 76% at Z = 4.561+0.757i ΩΩ ΩΩ ΓΓ ΓΓ = -0.3698+0.0712i Zo = 10 ΩΩ ΩΩ 3dB Compression Referenced to Peak Gain Zs(fo) = 5.66-4.31i ΩΩ ΩΩ Power Gain PAE

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 10 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load Pull Smith Charts (1, 2, 3) Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3.See pg. 18 for load pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 4GHz, Load-pull 46.4 46.2 12 11.7 11.4

• • •• Max Power is 46.5dBm at Z = 5.19-7.461i ΩΩ ΩΩ ΓΓ ΓΓ = -0.0607-0.521i
• • •• Max Gain is 12dB at Z = 4.766-1.577i ΩΩ ΩΩ ΓΓ ΓΓ = -0.3392-0.143i
• • •• Max PAE is 65.1% at Z = 3.107-3.202i ΩΩ ΩΩ ΓΓ ΓΓ = -0.4399-0.3518i Zo = 10 ΩΩ ΩΩ 3dB Compression Referenced to Peak Gain Zs(fo) = 9.81-12.52i ΩΩ ΩΩ Power Gain PAE

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 11 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load Pull Smith Charts (1, 2, 3) Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 18 for load pull reference planes. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 5GHz, Load-pull 46.7 46.5 46.3 12.4 12.1 11.8 69.1 67.1 65.1

• • •• Max Power is 46.8dBm at Z = 6.608-11.147i ΩΩ ΩΩ ΓΓ ΓΓ = 0.1697-0.5572i
• • •• Max Gain is 12.6dB at Z = 3.707-4.914i ΩΩ ΩΩ ΓΓ ΓΓ = -0.2929-0.4635i
• • •• Max PAE is 69.6% at Z = 4.332-6.284i ΩΩ ΩΩ ΓΓ ΓΓ = -0.1705-0.5132i Zo = 10 ΩΩ ΩΩ 3dB Compression Referenced to Peak Gain Zs(fo) = 15.43-11.56i ΩΩ ΩΩ Power Gain PAE

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 12 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load Pull Smith Charts (1, 2, 3) Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2.Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 18 for load pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 6GHz, Load-pull 46.2 45.8 13.1 12.8 12.5

• • •• Max Power is 46.2dBm at Z = 5.156-12.275i ΩΩ ΩΩ ΓΓ ΓΓ = 0.2031-0.6454i
• • •• Max Gain is 13.2dB at Z = 3.595-8.101i ΩΩ ΩΩ ΓΓ ΓΓ = -0.0856-0.6469i
• • •• Max PAE is 60% at Z = 4.764-10.203i ΩΩ ΩΩ ΓΓ ΓΓ = 0.0832-0.6336i Zo = 10 ΩΩ ΩΩ 3dB Compression Referenced to Peak Gain Zs(fo) = 7.65-2.21i ΩΩ ΩΩ Power Gain PAE

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 13 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Characterization Drive-up (1, 2) 1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20% 2. NaN means the parameter is either unavailable or undefined. 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 17 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

1 GHz - Power Tuned

Zs-fo = 1.89+3.07i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 8.696-2.126i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 0 100 PAE [%] Gain PAE 31 32 33 34 35 36 37 38 39 40 41 42 43 44 17 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

1 GHz - Efficiency Tuned

Zs-fo = 1.89+3.07i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 12.703+1.76i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 31 32 33 34 35 36 37 38 39 40 41 42 43 44 0 100 PAE [%] Gain PAE 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 13 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

2 GHz - Power Tuned

Zs-fo = 2.2-0.59i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 3.96+1.293i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 0 100 PAE [%] Gain PAE 31 32 33 34 35 36 37 38 39 40 41 42 43 44 13 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

2 GHz - Efficiency Tuned

Zs-fo = 2.2-0.59i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 5.745+6.305i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 31 32 33 34 35 36 37 38 39 40 41 42 43 44 0 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 8 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

3 GHz - Power Tuned

Zs-fo = 5.66-4.31i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 4.75-2.265i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 0 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 8 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

3 GHz - Efficiency Tuned

Zs-fo = 5.66-4.31i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 4.561+0.757i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 32 33 34 35 36 37 38 39 40 41 42 43 44 45 0 100 PAE [%] Gain PAE

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 14 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Characterization Drive-up (1, 2) 1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20% 2. NaN means the parameter is either unavailable or undefined. 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 6 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

4 GHz - Power Tuned

Zs-fo = 9.81-12.52i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 5.19-7.461i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 0 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 6 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

4 GHz - Efficiency Tuned

Zs-fo = 9.81-12.52i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 3.107-3.202i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 32 33 34 35 36 37 38 39 40 41 42 43 44 45 0 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 7 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

5 GHz - Power Tuned

Zs-fo = 15.43-11.56i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 6.608-11.147i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 0 100 PAE [%] Gain PAE 33 34 35 36 37 38 39 40 41 42 43 44 45 46 7 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

5 GHz - Efficiency Tuned

Zs-fo = 15.43-11.56i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 4.332-6.284i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 33 34 35 36 37 38 39 40 41 42 43 44 45 46 0 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 9 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

6 GHz - Power Tuned

Zs-fo = 7.65-2.21i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 5.156-12.275i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 0 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 9 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

6 GHz - Efficiency Tuned

Zs-fo = 7.65-2.21i ΩΩ ΩΩ Zs-2fo = NaN ΩΩ ΩΩ Zs-3fo = NaN ΩΩ ΩΩ Zl-fo = 4.764-10.203i ΩΩ ΩΩ Zl-2fo = NaN ΩΩ ΩΩ Zl-3fo = NaN ΩΩ ΩΩ 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 0 100 PAE [%] Gain PAE

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 15 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Performance Over Temperature (1, 2) Performance measured in Qorvo’s 5.4 GHz to 5.9 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 16 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Evaluation Board Performance (1, 2) Performance at 3 dB Compression Notes: 1. Test Conditions: V DS = 28 V, I DQ = 200 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 % Application Circuit Bias-up Procedure Set gate voltage (V G) to -5.0V. Set drain current (I D) limit to 220 mA. Set drain voltage (V D) to 28 V Slowly increase V G until quiescent I D is 200 mA. Set drain current (I D) to 2.8 A. Apply RF signal. Bias-down Procedure Turn off RF signal. Turn off V D and wait 1 second to allow drain capacitor discharge. Turn off V G.

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 17 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at Qorvo Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number C1 0.3 pF 1 ATC ATC600S0R3 C2 0.2 pF 1 ATC ATC600S0R2 L1, L2 8.8 NH 2 COILCRAFT 1606-8 C3, C4, C6, C7, C8 3 pF 5 ATC ATC600S3R0 C5 0.4 pF 1 ATC ATC600S0R5 R1 97.6 Ohms 1 Venkel CR0604-16w-97R6FT R2 4.7 Ohms 1 Newark 37C0064 R3 330 Ohms 1 Newark TNPW1206330RBT9ET1-E3 R4 50 Ohms 1 ATC CRCW120651R0FKEA C9, C10 220 pF 2 AVX AVX06035C22KAT2A C11, C12 2200 pF 2 Vitramon VJ1206Y222KXA C13, C14 22000 pF 2 Vitramon VJ1206Y223KXA C15 220 uF 1 United Chemi-Con EMVY500ADA221MJA0G C16 1.0 uF 1 Allied 541-1231 L3 48 Ohm 1 Ferrite, Laird Tech. 28F0121-0SR-10

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 18 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Pin Layout Note: The T2G6003028-FS will be marked with the “30282” d esignator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work we ek of the assembly lot start, and the “ZZZ” is an auto-generated number. Pin Description Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 17 as an

example.

2 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 17 as an

example. 3 Flange Source connected to ground; see EVB Layout on page 17 as an example. Notes: Thermal resistance measured to bottom of package Load Pull Reference Planes

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 19 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Mechanical Information All dimensions are in millimeters. Note: This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 ° C reflow temperature) and tin-lead (maximum 245° C reflow temperature) soldering processes.

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 20 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 1A Value: Passes ≥ 250 V to < 500 V max. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 Solderability Compatible with the latest version of J-STD- 020, Lead free solder, 260° C RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C 15 H12 Br 402) Free
• PFOS Free
• SVHC Free MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at 260° C p er JEDEC standard IPC/JEDEC J-STD-020. ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile

30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 02-01-16 - 21 of 21 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Contact Information For the latest specifications, additional product informat ion, worldwide sales and distribution locations, and informa tion about Qorvo: Email: info-sales@qorvo.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-products@qorvo.com Important Notice The information contained herein is believed to be reliab le. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any o f the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information d oes not grant, explicitly or implicitly, to any party any p atent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life- sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.