T2G6003028-FL

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Technical content

30 W, 28V DC – 6 GHz, GaN RF Power Transistor

Datasheet Rev. C, May 2021 │ Subject to change without notice - 1 of 21- www.qorvo.com Product Overview The Qorvo T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with Qorvo’s proven QGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line -ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram Key Features 1

• Frequency: DC to 6 GHz
• Output Power (P3dB): 42.7 W
• Linear Gain: >14 dB
• Operating Voltage: 28 V
• Low thermal resistance package
• Pulse capable Note 1: @ 3 Ghz Ordering info Part No. Description T2G6003028-FL Packaged part Flanged T2G6003028-FSEVB 5.4 – 5.9 GHz Evaluation Board T2G6003028-FSEVB2 1.3 – 1.9 GHz Evaluation Board Pin Configuration Pin No. Label

1 VD / RF OUT

2 VG / RF IN

Applications

• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers

Datasheet Rev. C, May 2021 │ Subject to change without notice - 2 of 21- www.qorvo.com Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage, BVDG 100 V Gate Voltage Range, VG -7 to +2 V Drain Current, IDMAX 5.5 A Gate Current Range, IG -10 to 28 mA Power Dissipation, Pulsed, PDISS 47.5 W RF Input Power, CW, T = 25°C (PIN) 40 dBm Channel Temperature (TCH) 275 °C Mounting Temperature (30 Seconds) 320 °C Storage Temperature −40 to +150 °C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions 1, 2 Parameter Min Typ Max Units Drain Voltage Range, VD 12 40 V Drain Bias Current, IDQ 200 mA Gate Voltage, VG – −3.0 – V Electrical Specifications 1, 2 Parameter Min Typ Max Units Linear Gain, GLIN 12 14 – dB Output Power at 3dB compression point, P3dB 43.0 44.6 – W Drain Efficiency at 3dB compression point, DEFF3dB 45.0 54.0 – % Gain at 3dB compression point, G3dB 9.0 11.0 – dB Gate Leakage (VD = +10 V, VG = −3.7 V) -11 – – mA Notes: 1. Performance at 5.6 GHz in the 5.4 to 5.9 GHz Evaluation Board 2. VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20% RF Characterization – Mismatch Ruggedness at 5.6 GHz 1 Symbol Parameter dB Compression Typical VSWR Impedance Mismatch Ruggedness 3 10:1 Notes: 1. P1dB CW Input Power under matched condition.

Datasheet Rev. C, May 2021 │ Subject to change without notice - 3 of 21- www.qorvo.com Power-Matched Load Pull Performance Test conditions unless otherwise noted: T = 25°C. Parameter Typical Value Units Frequency (F) 1 2 3 4 5 6 GHz Drain Voltage (VD) 28 28 28 28 28 28 V Bias Current (IDQ) 200 200 200 200 200 200 mA 54.7 % Notes: 1. VD = 28 V, IDQ = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20% 2. Characteristic Impedance (Zo) = 10 Ω. See pg. 14 for Load Pull Reference Planes. Efficiency-Matched Load Pull Performance Test conditions unless otherwise noted: T = 25°C. Parameter Typical Value Units Frequency (F) 1 2 3 4 5 6 GHz Drain Voltage (VD) 28 28 28 28 28 28 V Bias Current (IDQ) 200 200 200 200 200 200 mA PAE @ P3dB (PAE3dB) 73 76 46.1 65.1 69.5 60 % Notes: 1. VD = 28 V, IDQ = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20%. 2. Characteristic Impedance (Zo) = 10 Ω. See pg. 14 for Load Pull Reference Planes.

Datasheet Rev. C, May 2021 │ Subject to change without notice - 4 of 21- www.qorvo.com Parameter Test Conditions Value Units Thermal Resistance, IR2 (θJC) PD = 40 W, Tbase = 85°C Pulse Width = 100 uS Duty Cycle = 5% 1.56 °C/W Peak Channel Temperature, TCH 147.37 °C Thermal Resistance, IR2 (θJC) PD = 40 W, Tbase = 85°C Pulse Width = 100 uS Duty Cycle = 10% 1.62 °C/W Peak Channel Temperature, TCH 149.83 °C Thermal Resistance, IR2 (θJC) PD = 40 W, Tbase = 85°C Pulse Width = 100 uS Duty Cycle = 20% 1.77 °C/W Peak Channel Temperature, TCH 155.89 °C Thermal Resistance, IR2 (θJC) PD = 40 W, Tbase = 85°C Pulse Width = 100 uS Duty Cycle = 50% 2.07 °C/W Peak Channel Temperature, TCH 167.69 °C Notes: 1. Thermal resistance calculated to bottom of package. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Thermal Information – CW 1,2 Thermal Information – Pulsed 1,2 Parameter Test Conditions Value Units Thermal Resistance, IR2 (θJC) PD = 30 W, Tbase = 85°C 2.51 °C/W Maximum Channel Temperature, TCH 160.25 °C Thermal Resistance, IR2 (θJC) PD = 35 W, Tbase = 85°C 2.58 °C/W Maximum Channel Temperature, TCH 175.20 °C Thermal Resistance, IR2 (θJC) PD = 40 W, Tbase = 85°C 2.67 °C/W Maximum Channel Temperature, TCH 191.68 °C Thermal Resistance, IR2 (θJC) PD = 45 W, Tbase = 85°C 2.75 °C/W Maximum Channel Temperature, TCH 208.73 °C Notes: 1. Thermal resistance calculated to bottom of package. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Datasheet Rev. C, May 2021 │ Subject to change without notice - 5 of 21- www.qorvo.com Load Pull Contours 1, 2, 3 Notes: 1. Test Conditions: VDS = 28 V, IDQ = 200 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 14 for load pull reference planes. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 1GHz, Load-pull 45.6 45.4 45.2 22.4 22.1 21.8 70.6 68.6 66.6

• Max Power is 45.7dBm at Z = 8.696-2.126i
• Max Gain is 22.8dB at Z = 4.451+3.146i
• Max PAE is 73% at Z = 12.703+1.76i  = 0.1243+0.0679i Zo = 10 3dB Compression Referenced to Peak Gain Zs(fo) = 1.89+3.07i Power Gain PAE

Datasheet Rev. C, May 2021 │ Subject to change without notice - 6 of 21- www.qorvo.com Load Pull Contours 1, 2, 3 Notes: 1. Test Conditions: VDS = 28 V, IDQ = 200 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 14 for load pull reference planes. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 2GHz, Load-pull 45.8 45.6 16.2 15.9 15.6 75.6 73.6 71.6

• Max Power is 46dBm
• Max Gain is 16.3dB at Z = 4.839+4.569i  = -0.2311+0.379i
• Max PAE is 76% at Z = 5.745+6.305i Zo = 10 3dB Compression Referenced to Peak Gain Zs(fo) = 2.2-0.59i Power Gain PAE

Datasheet Rev. C, May 2021 │ Subject to change without notice - 7 of 21- www.qorvo.com Load Pull Contours 1, 2, 3 Notes: 1. Test Conditions: VDS = 28 V, IDQ = 200 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 14 for load pull reference planes. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 3GHz, Load-pull 46.3 46.1 45.9 11.711.411.1 74.2 72.2 70.2

• Max Power is 46.3dBm
• Max Gain is 11.9dB at Z = 6.766+2.282i
• Max PAE is 76% at Z = 4.561+0.757i Zo = 10 3dB Compression Referenced to Peak Gain Zs(fo) = 5.66-4.31i Power Gain PAE

Datasheet Rev. C, May 2021 │ Subject to change without notice - 8 of 21- www.qorvo.com Load Pull Contours 1, 2, 3 Notes: 1. Test Conditions: VDS = 28 V, IDQ = 200 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 14 for load pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 4GHz, Load-pull 46.4 46.2 12 11.7 11.4

• Max Power is 46.5dBm  = -0.0607-0.521i
• Max Gain is 12dB at Z = 4.766-1.577i  = -0.3392-0.143i
• Max PAE is 65.1% at Z = 3.107-3.202i Zo = 10 3dB Compression Referenced to Peak Gain Power Gain PAE

Datasheet Rev. C, May 2021 │ Subject to change without notice - 9 of 21- www.qorvo.com Load Pull Contours 1, 2, 3 Notes: 1. Test Conditions: VDS = 28 V, IDQ = 200 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 14 for load pull reference planes. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 3GHz, Load-pull 46.3 46.1 45.9 11.711.411.1 74.2 72.2 70.2

• Max Power is 46.3dBm
• Max Gain is 11.9dB at Z = 6.766+2.282i
• Max PAE is 76% at Z = 4.561+0.757i Zo = 10 3dB Compression Referenced to Peak Gain Zs(fo) = 5.66-4.31i Power Gain PAE 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 5GHz, Load-pull 46.7 46.5 46.3 12.4 12.1 11.8 69.1 67.1 65.1
• Max Power is 46.8dBm at Z = 6.608-11.147i  = 0.1697-0.5572i
• Max Gain is 12.6dB at Z = 3.707-4.914i
• Max PAE is 69.6% at Z = 4.332-6.284i Zo = 10 3dB Compression Referenced to Peak Gain Power Gain PAE

Datasheet Rev. C, May 2021 │ Subject to change without notice - 10 of 21- www.qorvo.com Load Pull Contours 1, 2, 3 Notes: 1. Test Conditions: VDS = 28 V, IDQ = 200 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. See pg. 14 for load pull reference planes. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 3GHz, Load-pull 46.3 46.1 45.9 11.711.411.1 74.2 72.2 70.2

• Max Power is 46.3dBm
• Max Gain is 11.9dB at Z = 6.766+2.282i
• Max PAE is 76% at Z = 4.561+0.757i Zo = 10 3dB Compression Referenced to Peak Gain Zs(fo) = 5.66-4.31i Power Gain PAE 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 6GHz, Load-pull 46.2 45.8 13.1 12.8 12.5
• Max Power is 46.2dBm at Z = 5.156-12.275i  = 0.2031-0.6454i
• Max Gain is 13.2dB at Z = 3.595-8.101i
• Max PAE is 60% at Z = 4.764-10.203i  = 0.0832-0.6336i Zo = 10 3dB Compression Referenced to Peak Gain Zs(fo) = 7.65-2.21i Power Gain PAE

Datasheet Rev. C, May 2021 │ Subject to change without notice - 11 of 21- www.qorvo.com Load Pull Drive-ups 1, 2 Notes: 1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20% 2. NaN means the parameter is either unavailable or undefined. 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 4617 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

1 GHz - Power Tuned

Zs-fo = 1.89+3.07i Zs-2fo = NaN Zs-3fo = NaN Zl-2fo = NaN Zl-3fo = NaN 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 460 100 PAE [%] Gain PAE 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 4713 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

2 GHz - Power Tuned

Zs-fo = 2.2-0.59i Zs-2fo = NaN Zs-3fo = NaN Zl-fo = 3.96+1.293i Zl-2fo = NaN Zl-3fo = NaN 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 470 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 478 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

3 GHz - Power Tuned

Zs-fo = 5.66-4.31i Zs-2fo = NaN Zs-3fo = NaN Zl-fo = 4.75-2.265i Zl-2fo = NaN Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 470 100 PAE [%] Gain PAE 31 32 33 34 35 36 37 38 39 40 41 42 43 4417 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

1 GHz - Efficiency Tuned

Zs-fo = 1.89+3.07i Zs-2fo = NaN Zs-3fo = NaN Zl-2fo = NaN Zl-3fo = NaN 31 32 33 34 35 36 37 38 39 40 41 42 43 440 100 PAE [%] Gain PAE 31 32 33 34 35 36 37 38 39 40 41 42 43 4413 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

2 GHz - Efficiency Tuned

Zs-fo = 2.2-0.59i Zs-2fo = NaN Zs-3fo = NaN Zl-2fo = NaN Zl-3fo = NaN 31 32 33 34 35 36 37 38 39 40 41 42 43 440 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 458 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

3 GHz - Efficiency Tuned

Zs-fo = 5.66-4.31i Zs-2fo = NaN Zs-3fo = NaN Zl-2fo = NaN Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 43 44 450 100 PAE [%] Gain PAE

Datasheet Rev. C, May 2021 │ Subject to change without notice - 12 of 21- www.qorvo.com Load Pull Drive-ups 1, 2 Notes: 1. Vd = 28 V, Idq = 200 mA, Pulse Width = 100 uS, Duty Cycle = 20% 2. NaN means the parameter is either unavailable or undefined. 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 476 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

4 GHz - Power Tuned

Zs-fo = 9.81-12.52i Zs-2fo = NaN Zs-3fo = NaN Zl-fo = 5.19-7.461i Zl-2fo = NaN Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 470 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 477 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

5 GHz - Power Tuned

Zs-2fo = NaN Zs-3fo = NaN Zl-2fo = NaN Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 470 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 479 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

6 GHz - Power Tuned

Zs-fo = 7.65-2.21i Zs-2fo = NaN Zs-3fo = NaN Zl-2fo = NaN Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 470 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 456 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

4 GHz - Efficiency Tuned

Zs-fo = 9.81-12.52i Zs-2fo = NaN Zs-3fo = NaN Zl-2fo = NaN Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 43 44 450 100 PAE [%] Gain PAE 33 34 35 36 37 38 39 40 41 42 43 44 45 467 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

5 GHz - Efficiency Tuned

Zs-2fo = NaN Zs-3fo = NaN Zl-2fo = NaN Zl-3fo = NaN 33 34 35 36 37 38 39 40 41 42 43 44 45 460 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 43 44 45 469 Output Power [dBm] Gain [dB] T2G6003028 - Gain and PAE vs. Output Power

6 GHz - Efficiency Tuned

Zs-fo = 7.65-2.21i Zs-2fo = NaN Zs-3fo = NaN Zl-2fo = NaN Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 43 44 45 460 100 PAE [%] Gain PAE

Datasheet Rev. C, May 2021 │ Subject to change without notice - 13 of 21- www.qorvo.com Package Marking and Pin Configuration 1 Note: 1- The QPD1029L will be marked with the “QPD1029L” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number. Note: The T2G6003028-FL will be marked with the “30282” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, and the “ZZZ” is an auto-generated number. Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 17 as an

example.

2 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 17 as an

example. 3 Flange Source connected to ground; see EVB Layout on page 17 as an example. Notes: Thermal resistance measured to bottom of package Load Pull Reference Planes

Datasheet Rev. C, May 2021 │ Subject to change without notice - 14 of 21- www.qorvo.com Package Dimensions Notes: 1. Material: Package Base: Ceramic/Metal Package Lid: Ceramic 2. Part is epoxy sealed 3. All metalized features are gold plated 4. Part meets industry NI200 footprint 5. Body dimensions do not include lid shift or epoxy run out which can be up to 20 mils per side. 6. Dimensions are in inches. General tolerance is ±0.005”.

Datasheet Rev. C, May 2021 │ Subject to change without notice - 15 of 21- www.qorvo.com Package Dimensions1-5 Notes: 1. Material: Package Base: Ceramic/Metal Package Lid: Ceramic 2. Part is epoxy sealed 3. All metalized features are gold plated 4. Part meets industry NI200 footprint 5. Body dimensions do not include lid shift or epoxy run out which can be up to 20 mils per side. 6. Dimensions are in inches. General tolerance is ±0.005”.

Datasheet Rev. C, May 2021 │ Subject to change without notice - 16 of 21- www.qorvo.com Application Circuit Bias Procedure Bias-up Procedure Bias-down Procedure 1. Set VG to -5 V. 1. Turn off RF signal. 2. Set ID current limit to 220 mA. 2. Turn off VD 3. Apply 28 V VD. 3. Wait 1 seconds to allow drain capacitor to discharge. 4. Slowly adjust VG until ID is set to 200 mA. 4. Turn off VG 5. Set ID to 2.8 A. 6. Apply RF signal

Datasheet Rev. C, May 2021 │ Subject to change without notice - 17 of 21- www.qorvo.com 5.4 – 5.9 GHz Evaluation Board– Layout 1, 2, 3 Notes: 1. Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48 2. The pad pattern shown has been developed and tested for optimized assembly at Qorvo Semiconductor. 3. The PCB land pattern has been developed to accommodate lead and package tolerances 5.4 – 5.9 GHz Application Circuit – Bill of Materials EVB1 Ref Des Qty Description Mfg Name Mfg Part # C1 1 0.3 pF ATC ATC600S0R3 C2 1 0.2 pF ATC ATC600S0R2 L1, L2 2 8.8 NH COILCRAFT 1606-8 C3, C4, C6, C7, C8 5 3 pF ATC ATC600S3R0 C5 1 0.4 pF ATC ATC600S0R5 R1 1 97.6 Ohms Venkel CR0604-16w-97R6FT R2 1 4.7 Ohms Newark 37C0064 R3 1 330 Ohms Newark TNPW1206330RBT9ET1- R4 1 50 Ohms ATC CRCW120651R0FKEA C9, C10 2 220 pF AVX AVX06035C22KAT2A C11, C12 2 2200 pF Vitramon VJ1206Y222KXA C13, C14 2 22000 pF Vitramon VJ1206Y223KXA C15 1 220 uF United Chemi- Con EMVY500ADA221MJA0G C16 1 1.0 uF Allied 541-1231 L3 1 48 Ohm Ferrite, Laird Tech. 28F0121-0SR-10

Datasheet Rev. C, May 2021 │ Subject to change without notice - 18 of 21- www.qorvo.com Evaluation Board Performance 1, 2, 3 Notes: 1. Test Conditions: VDS = 28 V, IDQ = 200 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 % 3. Performance at 3dB compression.

Datasheet Rev. C, May 2021 │ Subject to change without notice - 19 of 21- www.qorvo.com Performance over Temperatures of 5.4 – 5.9 GHz EVB 1, 2 Notes: 1. Test Conditions: VD = 28 V, IDQ = 200 mA, 100 us Pulse Width, 20% Duty Cycle. 2. Performance at 3dB compression.

Datasheet Rev. C, May 2021 │ Subject to change without notice - 20 of 21- www.qorvo.com Thermal and Reliability Information – Pulsed 1 Recommended Solder Temperature Profile

Datasheet Rev. C, May 2021 │ Subject to change without notice - 21 of 21- www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1A (250V) JEDEC JESD22-A114 ESD – Charged Device Model (CDM) Class C3 (1000V) JEDEC JS-002 MSL – Moisture Sensitivity Level MSL3 JESD J-STD-020 Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO T HE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2021 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Solderability Solder profiles available upon request. The use of no-clean solder to avoid washing after soldering is recommended. Contact plating: NiAu. Minimum Au thickness is 60 µinches. RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electr ical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:

• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free