T2G6001528-Q3

T2G6001528-Q3_V01 QORVO | Alldatasheet

Document overview

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Technical content

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 1 of 16 www.qorvo.com Product Overview The T2G6001528-Q3 is an 18W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6.0 GHz. The device is constructed with Qorvo’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line -ups and lower thermal management costs. Lead free and RoHS compliant. Evaluation boards are available upon request. Key Features

• Operating Frequency Range: DC – 6.0 GHz
• Operating Drain Voltage: 28 V
• Output Power (P3dB): 19 W at 5.2 GHz
• Low thermal resistance package Functional Block Diagram

Applications

• Military Radar
• Civilian Radar
• Professional and military radio communications
• Test Instrumentation
• Wideband/Narrowband Amplifiers
• Jammers

Ordering Information

T2G6001528-Q3 Packaged Part Flangeless T2G6001528-Q3EVB1 5.0 – 6.0 GHz Evaluation Board T2G6001528-Q3EVB2 1.8 – 2.6 GHz Evaluation Board

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 2 of 16 www.qorvo.com Absolute Maximum Ratings Parameter Rating Breakdown Voltage (BVDG) +100 V Gate Voltage Range (VG) −7 to +2 V Drain Current (ID) 5 A Gate Current (IG) -5 to 14 mA Power Dissipation (PD) 28 W Peak RF Input Power, CW +36 dBm Channel Temperature (TCH) +275 °C Mounting Temperature (30 seconds) 320 °C Storage Temperature −40 to +150 °C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions(1) Parameter Min Typ Max Units Gate Voltage (VG) - -2.9 - V Drain Voltage (VD) - +32 - V Quiescent Drain Current (IDQ) - 50 - mA Peak Drain Current (ID) - 1.4 - A Channel Temperature (TCH) - - 225 °C Power Dissipation, CW PD(2) - - 20.9 W Power Dissipation, Pulse PD(3) - - 22.5 W

1 Electrical specification are measured at specified test

conditions. Specifications are not guaranteed over all recommended operating conditions.

2 Package at 85 °C

3 100uS Pulse Width, 20 % Duty Cycle, package at 85 °C RF Characterization – Load Pull Performance at 3.0 GHz(1) Parameter Min Typ Max Units Linear Gain (GLIN) - 16.5 - dB Output Power at 3 dB Gain Compression (P3dB) - 19.6 - W Drain Efficiency at 3 dB Gain Compression (DE3dB) - 69.6 - % Power Added Efficiency at 3 dB Gain Compression (PAE3dB) - 66.4 - % Gain at 3 dB Compression (G3dB) - 13.5 - dB Notes: 1. Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA, Pulse: 100uS, 20% RF Characterization – Load Pull Performance at 6.0 GHz(1) Parameter Min Typ Max Units Linear Gain (GLIN) - 11.3 - dB Output Power at 3 dB Gain Compression (P3dB) - 19.0 - W Drain Efficiency at 3 dB Gain Compression (DE3dB) - 66.0 - % Power Added Efficiency at 3 dB Gain Compression (PAE3dB) - 56.2 - % Gain at 3 dB Compression (G3dB) - 8.3 - dB Notes: 1. Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA, Pulse: 100uS, 20%

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 3 of 16 www.qorvo.com RF Characterization – Performance at 5.2 GHz(1,2) Parameter Min Typ Max Units Linear Gain (GLIN) - 10.5 - dB Output Power at 3 dB Gain Compression (P3dB) - 17.3 - W Drain Efficiency at 3 dB Gain Compression (DE3dB) - 48.0 - % Gain at 3 dB Compression (G3dB) - 7.5 - dB Gate Leakage, VD = 10 V, VG = -3.7 V -5.5 - - mA Notes: 1. Performance at 5.2 GHz in the 5.0 - 6.0 GHz Evaluation Board 2. Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA, Pulse: 100uS, 20% RF Characterization – Mismatch Ruggedness at 3.50 GHz(1,2) Symbol Parameter dB Compression Typical VSWR Impedance Mismatch Ruggedness 1 10:1 Notes: 1. Test conditions unless otherwise noted: TA = +25 °C, VD = +28 V, IDQ = 50 mA 2. VDS = 28 V, IDQ = 50 mA, CW at P1dB Thermal Information(1,2) Parameter Test Conditions Values Units Thermal Resistance PDISS = 22.5 W, Pulse Width = 100 μs Duty Cycle = 20%, TCASE = 85 °C 3.2 °C/W Channel Temperature 156.8 °C Notes: 1. Thermal resistance is measured to package backside. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 4 of 16 www.qorvo.com Maximum Channel Temperature 125 150 175 200 1.00E-05 1.00E-04 1.00E-03 1.00E-02 Maximum Channel Temperature (°C) Pulse Width (sec) Peak IR Surface Temperature vs. Pulse Width Package base fixed at 85 °C; Pdiss = 22.5W 50% Duty Cycle 20% Duty Cycle 10% Duty Cycle 5% Duty Cycle 100µsec

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 5 of 16 www.qorvo.com Load Pull Contours(1,2,3,4,5) Notes: 1. The impedances shown are those presented to the device at load pull reference planes. See page 13. 2. Test Conditions: VDS = 28 V, IDQ = 50 mA 3. Test Signal: Pulse Width = 100 μsec, Duty Cycle = 20% 4. NaN indicates the value was not set during load pull. 5. Zo is the characteristic impedance of load pull fixtures.

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 6 of 16 www.qorvo.com Load Pull Contours(1,2,3,4,5) Notes: 1. The impedances shown are those presented to the device at load pull reference planes. See page 13. 2. Test Conditions: VDS = 28 V, IDQ = 50 mA 3. Test Signal: Pulse Width = 100 μsec, Duty Cycle = 20% 4. NaN indicates the value was not set during load pull. 5. Zo is the characteristic impedance of load pull fixtures.

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 7 of 16 www.qorvo.com Load Pull Contours(1,2,3,4,5) Notes: 1. The impedances shown are those presented to the device at load pull reference planes. See page 13. 2. Test Conditions: VDS = 28 V, IDQ = 50 mA 3. Test Signal: Pulse Width = 100 μsec, Duty Cycle = 20% 4. NaN indicates the value was not set during load pull. 5. Zo is the characteristic impedance of load pull fixtures.

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 8 of 16 www.qorvo.com Load Pull Contours(1,2,3,4,5) Notes: 1. The impedances shown are those presented to the device at load pull reference planes. See page 13. 2. Test Conditions: VDS = 28 V, IDQ = 50 mA 3. Test Signal: Pulse Width = 100 μsec, Duty Cycle = 20% 4. NaN indicates the value was not set during load pull. 5. Zo is the characteristic impedance of load pull fixtures. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 6GHz, Load-pull 43.3 43.1 42.9 42.542.1 8.09 7.59 7.09

• Max Power is 43.4dBm at Z = 21.664-18.153i  = 0.5246-0.2725i
• Max Gain is 8.4dB at Z = 9.571-13.047i  = 0.2925-0.4716i
• Max PAE is 59.7% at Z = 7.187-13.788i  = 0.292-0.568i Zo = 10 Zs(2fo) = NaN Zs(3fo) = NaN Zl(2fo) = NaN Zl(3fo) = NaN Power Gain PAE

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 9 of 16 www.qorvo.com Typical Performance Performance is based on compromised impedance point and measured at DUT reference planes. See page 13. 33 34 35 36 37 38 39 40 41 42 4316 33 34 35 36 37 38 39 40 41 42 430 33 34 35 36 37 38 39 40 41 42 430 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

1000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZL = 11.37 - j2.11  33 34 35 36 37 38 39 40 41 42 4314 33 34 35 36 37 38 39 40 41 42 430 33 34 35 36 37 38 39 40 41 42 430 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

2000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZL = 14.14 + j0.70  33 34 35 36 37 38 39 40 41 42 4310 33 34 35 36 37 38 39 40 41 42 430 33 34 35 36 37 38 39 40 41 42 430 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

3000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZL = 12.51 + j1.04  33 34 35 36 37 38 39 40 41 42 437 33 34 35 36 37 38 39 40 41 42 430 33 34 35 36 37 38 39 40 41 42 430 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

4000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE 33 34 35 36 37 38 39 40 41 42 437 33 34 35 36 37 38 39 40 41 42 430 33 34 35 36 37 38 39 40 41 42 430 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

5000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 6.83 - j11.52  ZL = 13.34 - j6.40  33 34 35 36 37 38 39 40 41 42 435 33 34 35 36 37 38 39 40 41 42 430 33 34 35 36 37 38 39 40 41 42 430 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

6000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 13.51 - j15.66  ZL = 12.50 - j14.22 

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 10 of 16 www.qorvo.com Performance Over Temperature(1,2) Performance measured in Qorvo’s 5.0 GHz to 6.0 GHz Evaluation Board at 3dB Compression . Note: 1. Test Conditions: VDS = 28 V, IDQ = 50 mA 2. Test Signal: Pulse Width = 100 μs, Duty Cycle = 20%

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 11 of 16 www.qorvo.com T2G6001528-Q3-EVB1 Performance Plots – 5.0 – 6.0 GHz Reference Design(1,2) Performance at 3 dB Compression Notes: 1. Test Conditions: VDS = 28 V, IDQ = 50 mA 2. Test Signal: Pulse Width = 100 μs, Duty Cycle = 20% Application Circuit Biasing Procedure Bias On Bias Off 1. Turn ON VG to −5 V. 2. Turn ON VD to +28 V. 3. Slowly adjust VG until ID = 50 mA. 4. Turn ON RF. 1. Turn OFF RF. 2. Adjust VG to −5 V. 3. Turn OFF VD. 4. Wait two (2) seconds to allow drain capacitors to discharge. 5. Turn OFF VG.

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 12 of 16 www.qorvo.com T2G6001528-Q3EVB1 Layout – 5.0 – 6.0 GHz Reference Design Top RF Layer is 0.020” thick Rogers RO3203, εr = 3.02. The pad pattern shown has been developed and tested for optimized assembly at Qorvo Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. T2G6001528-Q3EVB1 Bill of Materials – 5.0 – 6.0 GHz Reference Design Reference Des. Value Description Manuf. Part Number C1, C14 100 pF - ATC 100A101JW500XC C2, C8 2400 pF - Dielectric Labs C08BL242X-5UN-XOB C3, C9 100 pF - ATC 100B101GT500X C4, C10 0.01 μF - Kemet C1206C103K1RACTU C5, C11 0.1 μF - Kemet C1206C104K1RACTU C6, C12 1.0 μF - AVX 1812C105KAT2A C7, C13 22 μF - Sprague 226K035AT L1 5.4 nH - Coilcraft 0906-5JL L2 9.85 nH - Coilcraft 1606-9JLB R1 12.1 Ω - Vishay CRC120612R1FKEA

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 13 of 16 www.qorvo.com Pin Configuration and Description(1) Pin Number Label Description

1 VD / RFOUT Drain voltage / RF Output matched to 50 Ω; see EVB Layout on page 10

as an example.

2 VG / RFIN Gate voltage / RF Input matched to 50 Ω; see EVB Layout on page 10

as an example.

3 Flange Source connected to ground; see EVB Layout on page 10 as an

example. Note: 1. The T2G6001528-Q3 will be marked with the “15282” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, and the “MXXX” is the production lot number.

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 14 of 16 www.qorvo.com Package Marking and Dimensions(1) Notes: 1. Unless otherwise noted, tolerance is .XXX +/- .005”. 2. Material: Package Base: Ceramic/Metal Package Lid: Ceramic 3. Package exposed metallization is gold plated. 4. Part is epoxy sealed. 5. Parts meet industry NI-200 footprint 6. Body dimensions do not include lid shift or epoxy run out which can be up to 20 mils per side.

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 15 of 16 www.qorvo.com Recommended Solder Temperature Profile

18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor Datasheet Rev. D, December 2021 Subject to change without notice. 16 of 16 www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1A (250 V) Per EIA/JESD22-A114 Standard ESD – Charged Device Model (CDM Class C3 (1000V) Per EIA/JESD22-C101 Standard MSL – Moisture Sensitivity Level Level 3 IPC/JEDEC Standard J-STD-020 Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260 °C. RoHS Compliance This part is compliant with 20 11/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br4O2) Free
• PFOS Free
• SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other application s where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2021 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.