T2G6001528-Q3-EVB2

T2G6001528-Q3 QORVO | Alldatasheet

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Technical content

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 1 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com

Applications

• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers Product Features
• Frequency: DC to 6 GHz
• Output Power (P 3dB ): 19 W at 5.2 GHz
• Linear Gain: >9 dB at 5.2 GHz
• Operating Voltage: 28 V
• Low thermal resistance package Functional Block Diagram Pin Configuration Pin No. Label

1 VD / RF OUT

2 VG / RF IN

The TriQuint T2G6001528-Q3 is an 18W (P 3dB ) discrete GaN on SiC HEMT which operates from DC to 6.0 GHz. The device is constructed with TriQuint’s proven TQGaN25 process , which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description T2G6001528-Q3 EAR99 Packaged part Flangeless T2G6001528-Q3- EVB1 EAR99 5.0 – 6.0 GHz Evaluation Board T2G6001528-Q3- EVB2 EAR99 1.8 – 2.6 GHz Evaluation Board

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 2 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Absolute Maximum Ratings Recommended Operating Conditions (1) Parameter Value Parameter Value Breakdown Voltage (BV DG ) 100 V min. Drain Voltage (V D) 32 V (Typ.) Gate Voltage Range (V G) -7 to 0 V Drain Quiescent Current (I DQ ) 50 mA (Typ.) Drain Current (I D) 5 A Peak Drain Current ( I D) 1.4 A (Typ.) Gate Current (I G) -5 to 14 mA Gate Voltage (V G) -2.9 V (Typ.) Power Dissipation (P D) 28 W Channel Temperature (T CH ) 225 ° C (Max) RF Input Power, CW, T = 25° C (P IN ) 36 dBm Power Dissipation, CW (P D)2 20.9 W (Max) Channel Temperature (T CH ) 275 ° C Power Dissipation, Pulse (P D)3 22.5 W (Max) Mounting Temperature (30 seconds) 320 ° C

1 Electrical specifications are measured at specified test

conditions. Specifications are not guaranteed over all recommended operating conditions.

2 Package at 85 ° C

3 100uS Pulse Width, 20 % Duty Cycle, package at 85 ° C Storage Temperature -40 to 150 ° C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. RF Characterization – Load Pull Performance at 3.0 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 50 mA, Pulse: 100uS, 20% Symbol Parameter Min Typical Max Units GLIN Linear Gain 16.5 dB P3dB Output Power at 3 dB Gain Compression 19.6 W DE 3dB Drain Efficiency at 3 dB Gain Compression 69.6 % PAE 3dB Power-Added Efficiency at 3 dB Gain Compression 66.4 % G3dB Gain at 3 dB Compression 13.5 dB RF Characterization – Load Pull Performance at 6.0 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 50 mA, Pulse: 100uS, 20% Symbol Parameter Min Typical Max Units GLIN Linear Gain 11.3 dB P3dB Output Power at 3 dB Gain Compression 19.0 W DE 3dB Drain Efficiency at 3 dB Gain Compression 66.0 % PAE 3dB Power-Added Efficiency at 3 dB Gain Compression 56.2 % G3dB Gain at 3 dB Compression 8.3 dB

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 3 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com RF Characterization – Mismatch Ruggedness at 3.50 G Hz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 50 mA Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1 Notes: 1. VDS = 28 V, I DQ = 50 mA, CW at P 1dB RF Characterization – Performance at 5.2 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 50 mA, Pulse: 100uS, 20% Symbol Parameter Min Typical Max Units GLIN Linear Gain 10.5 dB P3dB Output Power at 3 dB Gain Compression 17.3 W DE 3dB Drain Efficiency at 3 dB Gain Compression 48.0 % G3dB Gain at 3 dB Compression 7.5 dB Notes: 1. Performance at 5.2 GHz in the 5.0 to 6.0 GHz Evaluation Board

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 4 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Thermal and Reliability Information – Pulsed Parameter Test Conditions Value Units Thermal Resistance ( θJC ) Pdiss = 22.5W, Pulse width = 100 uS, Duty cycle = 5%, Tbase = 85 ° C 4.6 ° C/W Channel Temperature (T CH ) 188 ° C Median Lifetime (T M) 4.9 E7 Hrs Thermal Resistance ( θJC ) Pdiss = 22.5W, Pulse width = 100 uS, Duty cycle = 10%, Tbase = 85 ° C 4.7 ° C/W Channel Temperature (T CH ) 191 ° C Median Lifetime (T M) 3.6 E7 Hrs Thermal Resistance ( θJC ) Pdiss = 22.5W, Pulse width = 100 uS, Duty cycle = 20%, Tbase = 85 ° C 5.0 ° C/W Channel Temperature (T CH ) 198 ° C Median Lifetime (T M) 1.9 E7 Hrs Thermal Resistance ( θJC ) Pdiss = 22.5W, Pulse width = 100 uS, Duty cycle = 50%, Tbase = 85 ° C 5.6 ° C/W Channel Temperature (T CH ) 212 ° C Median Lifetime (T M) 5.5 E6 Hrs Notes: Thermal resistance measured to bottom of package, Pulsed. Thermal and Reliability Information – CW Parameter Test Conditions Value Units Thermal Resistance ( θJC ) Pdiss = 15W, Tbase = 85 ° C 6.2 ° C/W Channel Temperature (T CH ) 178 ° C Median Lifetime (T M) 1.3 E8 Hrs Thermal Resistance ( θJC ) Pdiss = 17.5W, Tbase = 85 ° C 6.5 ° C/W Channel Temperature (T CH ) 198 ° C Median Lifetime (T M) 1.9 E7 Hrs Thermal Resistance ( θJC ) Pdiss = 20W, Tbase = 85 ° C 6.7 ° C/W Channel Temperature (T CH ) 219 ° C Median Lifetime (T M) 3.0 E6 Hrs Thermal Resistance ( θJC ) Pdiss = 22.5W, Tbase = 85 ° C 7.0 ° C/W Channel Temperature (T CH ) 243 ° C Median Lifetime (T M) 4.4 E5 Hrs Notes: Thermal resistance measured to bottom of package, CW.

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 5 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Median Lifetime Maximum Channel Temperature TBASE = 85° C, P D = 22.5 W

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 6 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) Notes: 1. The impedances shown are those presented to the device at load pull reference planes. See page 14. 2. Test Conditions: V DS = 28 V, I DQ = 50 mA 3. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 4. NaN indicates the value was not set during load pull. 5. Zo is characteristic impedance of load pull fixt ures. 0.7 0.8 0.9 1.2 1.4 1.6 1.8 3GHz, Load-pull 42.8 42.6 42.4 13.3 12.8 12.3 11.8 71.4 69.4 67.4 63.4 59.4

• • •• Max Power is 43dBm at Z = 12.811-0.819i ΩΩ ΩΩ ΓΓ ΓΓ = 0.1243-0.0314i
• • •• Max Gain is 13.7dB at Z = 8.871+5.572i ΩΩ ΩΩ ΓΓ ΓΓ = 0.0252+0.2879i
• • •• Max PAE is 72.7% at Z = 8.441+7.062i ΩΩ ΩΩ ΓΓ ΓΓ = 0.0542+0.3622i Zo = 10 ΩΩ ΩΩ Zs(fo) = 4.14-2.4i ΩΩ ΩΩ Zs(2fo) = NaN ΩΩ ΩΩ Zs(3fo) = NaN ΩΩ ΩΩ Zl(2fo) = NaN ΩΩ ΩΩ Zl(3fo) = NaN ΩΩ ΩΩ Power Gain PAE

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 7 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) Notes: 1. The impedances shown are those presented to the device at load pull reference planes. See page 14. 2. Test Conditions: V DS = 28 V, I DQ = 50 mA 3. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 4. NaN indicates the value was not set during load pull. 5. Zo is characteristic impedance of load pull fixt ures. 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 4GHz, Load-pull 42.9 42.7 42.5 11.7 11.2 10.7 10.2 63.3 61.3 59.3 55.3 57.3

• • •• Max Power is 43dBm at Z = 13.332-5.503i ΩΩ ΩΩ ΓΓ ΓΓ = 0.188-0.1915i
• • •• Max Gain is 11.8dB at Z = 6.973-0.441i ΩΩ ΩΩ ΓΓ ΓΓ = -0.1776-0.0306i
• • •• Max PAE is 63.8% at Z = 8.632+2.102i ΩΩ ΩΩ ΓΓ ΓΓ = -0.06+0.1196i Zo = 10 ΩΩ ΩΩ Zs(fo) = 6.84-7.48i ΩΩ ΩΩ Zs(2fo) = NaN ΩΩ ΩΩ Zs(3fo) = NaN ΩΩ ΩΩ Zl(2fo) = NaN ΩΩ ΩΩ Zl(3fo) = NaN ΩΩ ΩΩ Power Gain PAE

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 8 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) Notes: 1. The impedances shown are those presented to the device at load pull reference planes. See page 14. 2. Test Conditions: V DS = 28 V, I DQ = 50 mA 3. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 4. NaN indicates the value was not set during load pull. 5. Zo is characteristic impedance of load pull fixt ures. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 5GHz, Load-pull 43.5 43.3 43.1 42.9 11.3 10.8 10.3 9.81 9.31 64.6 62.6 54.6 52.6

• • •• Max Power is 43.6dBm at Z = 18.018-14.582i ΩΩ ΩΩ ΓΓ ΓΓ = 0.4383-0.2923i
• • •• Max Gain is 11.4dB at Z = 6.166-3.677i ΩΩ ΩΩ ΓΓ ΓΓ = -0.1763-0.2675i
• • •• Max PAE is 66.4% at Z = 8.088-10.399i ΩΩ ΩΩ ΓΓ ΓΓ = 0.169-0.4778i Zo = 10 ΩΩ ΩΩ Zs(fo) = 6.83-11.52i ΩΩ ΩΩ Zs(2fo) = NaN ΩΩ ΩΩ Zs(3fo) = NaN ΩΩ ΩΩ Zl(2fo) = NaN ΩΩ ΩΩ Zl(3fo) = NaN ΩΩ ΩΩ Power Gain PAE

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 9 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) Notes: 1. The impedances shown are those presented to the device at load pull reference planes. See page 14. 2. Test Conditions: V DS = 28 V, I DQ = 50 mA 3. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 4. NaN indicates the value was not set during load pull. 5. Zo is characteristic impedance of load pull fixt ures. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 6GHz, Load-pull 43.3 43.1 42.9 42.5 42.1 8.09 7.59 7.09

• • •• Max Power is 43.4dBm at Z = 21.664-18.153i ΩΩ ΩΩ ΓΓ ΓΓ = 0.5246-0.2725i
• • •• Max Gain is 8.4dB at Z = 9.571-13.047i ΩΩ ΩΩ ΓΓ ΓΓ = 0.2925-0.4716i
• • •• Max PAE is 59.7% at Z = 7.187-13.788i ΩΩ ΩΩ ΓΓ ΓΓ = 0.292-0.568i Zo = 10 ΩΩ ΩΩ Zs(fo) = 13.51-15.66i ΩΩ ΩΩ Zs(2fo) = NaN ΩΩ ΩΩ Zs(3fo) = NaN ΩΩ ΩΩ Zl(2fo) = NaN ΩΩ ΩΩ Zl(3fo) = NaN ΩΩ ΩΩ Power Gain PAE

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 10 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Typical Performance Performance is based on compromised impedance point and measured at DUT reference planes. See page 14. 33 34 35 36 37 38 39 40 41 42 43 16 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

1000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 4.57 + j8.99 Ω ZL = 11.37 - j2.11 Ω 33 34 35 36 37 38 39 40 41 42 43 14 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

2000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 2.46 + j3.40 Ω ZL = 14.14 + j0.70 Ω 33 34 35 36 37 38 39 40 41 42 43 10 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

3000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 4.14 - j2.40 Ω ZL = 12.51 + j1.04 Ω 33 34 35 36 37 38 39 40 41 42 43 7 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

4000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 6.84 - j7.48 Ω ZL = 9.86 - j2.97 Ω 33 34 35 36 37 38 39 40 41 42 43 7 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

5000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 6.83 - j11.52 Ω ZL = 13.34 - j6.40 Ω 33 34 35 36 37 38 39 40 41 42 43 5 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

6000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 13.51 - j15.66 Ω ZL = 12.50 - j14.22 Ω

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 11 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Performance Over Temperature (1, 2) Performance measured in TriQuint’s 5.0 GHz to 6.0 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: V DS = 28 V, I DQ = 50 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 12 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Evaluation Board Performance (1, 2) Performance at 3 dB Compression Notes: 1. Test Conditions: V DS = 28 V, I DQ = 50 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 % Application Circuit Bias-up Procedure Set gate voltage (V G) to -5.0V Set drain voltage (V D) to 28 V Slowly increase V G until quiescent I D is 50 mA. Apply RF signal Bias-down Procedure Turn off RF signal Turn off V D and wait 1 second to allow drain capacitor dissipation Turn off V G

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 13 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO3203, ɛr = 3.02. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number C1, C14 100 pF 2 ATC 100A101JW500XC C2, C8 2400 pF 1 Dielectric Labs C08BL242X-5UN-XOB C3, C9 100 pF 2 ATC 100B101GT500X C4, C10 0.01 uF 2 Kemet C1206C103K1RACTU C5, C11 0.1 uF 2 Kemet C1206C104K1RACTU C6, C12 1.0 uF 2 AVX 1812C105KAT2A C7, C13 22 uF 2 Sprague 226K035AT L1 5.4 nH 1 Coilcraft 0906-5JL L2 9.85 nH 1 Coilcraft 1606-9JLB R1 12.1Ohms 1 Vishay CRC120612R1FKEA

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 14 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Pin Layout Note: The T2G6001528-Q3 will be marked with the “15282” d esignator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work we ek of the assembly lot start, and the “MXXX” is the production lot number. Pin Description Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an

example.

2 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an

example. 3 Flange Source connected to ground; see EVB Layout on page 9 as an example. Notes: Thermal resistance measured to bottom of package

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 15 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Mechanical Information All dimensions are in millimeters. Unless specified otherwise, tolerances are ± 0.127. Note: This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 ° C reflow temperature) and tin-lead (maximum 245° C reflow temperature) soldering processes.

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 16 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 1A Value: Passes ≥ 250 V to < 500 V max. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 Solderability Compatible with the latest version of J-STD- 020, Lead free solder, 260° C RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C 15 H12 Br 402) Free
• PFOS Free
• SVHC Free MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at 260° C p er JEDEC standard IPC/JEDEC J-STD-020. ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev C 05-13-15 - 17 of 17 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Contact Information For the latest specifications, additional product informat ion, worldwide sales and distribution locations, and informa tion about TriQuint: Email: info-sales@triquint.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliab le. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.