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DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 1 of 18 - www.qorvo.com 4-lead NI-650 Package (Earless) Product Overview The Qorvo T 1G4020036-FS is a 2 x 200 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support both pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram Key Features

  • Frequency: DC to 3.5 GHz
  • Output Power (P3dB)1: 200 W
  • Linear Gain1: 18.1 dB
  • Typical PAE3dB1: 67.6%
  • Operating Voltage: 50 V
  • CW and Pulse capable Note 1: @ 2.8 GHz Load Pull (Half of device)

Applications

  • Military and civilian radar
  • Professional and military radio communications
  • Test instrumentation
  • Wideband or narrowband amplifiers
  • Jammers Ordering info Part No. Description T1G4020036-FS DC – 3.5 GHz, 50 V, 200 W GaN RF Transistor, Earless T1G4020036-FS-EVB1 2.9 – 3.3 GHz EVB

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 2 of 18 - www.qorvo.com Absolute Maximum Ratings 1 Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, VG –7 to +2 V Drain Current, IDMAX 24 A Power Dissipation, CW, PDISS 236 W RF Input Power, CW, T = 25 °C +47.5 dBm Channel Temperature, TCH 275 °C Mounting Temperature (30 Seconds) 320 °C Storage Temperature −65 to +150 °C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions 1 Parameter Min Typ Max Units Operating Temp. Range −40 +25 +85 °C Drain Voltage Range, VD +32 +50 +55 V Drain Bias Current, IDQ – 520 – mA Drain Current, ID4 – 12 – A Gate Voltage, VG3 – −2.8 – V Channel Temperature (TCH) – – 250 °C Power Dissipation (PD)2,4 – – 374 W Power Dissipation (PD), CW2 – – 211 W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at 85 °C 3. To be adjusted to desired IDQ 4. Pulsed, 100us PW, 20% DC Measured Load Pull Performance – Power Tuned 1 Parameter Typical Values Units Frequency, F 2.4 2.8 3.2 3.6 GHz Output Power at 3dB compression, P3dB 53.1 53.0 52.8 52.9 dBm Power Added Efficiency at 3dB compression, PAE3dB 54.1 54.7 57.5 54.9 % Gain at 3dB compression, G3dB 15.6 15.1 15.9 16.0 dB Notes: 1. Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 260 mA (half device) 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. Measured Load Pull Performance – Efficiency Tuned 1 Parameter Typical Values Units Frequency, F 2.4 2.8 3.2 3.6 GHz Output Power at 3dB compression, P3dB 50.1 50.2 50.5 50.5 dBm Power Added Efficiency at 3dB compression, PAE3dB 72.9 67.6 66.5 65.8 % Gain at 3dB compression, G3dB 17.5 18.4 17.4 18.1 dB Notes: 1. Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 260 mA (half device) 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle.

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 3 of 18 - www.qorvo.com RF Characterization – 2.9 – 3.3 GHz EVB Performance at 2.9 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN – 16.1 – dB Output Power at 3dB compression point, P3dB 162 190 – W Drain Efficiency at 3dB compression point, DEFF3dB 40.0 47.0 – % Gain at 3dB compression point, G3dB 12.0 13.1 – dB Gate Leakage2 VD = +10 V, VG = −3.8 V −63.4 mA Notes: 1. VD = +36 V, IDQ = 520 mA (combined), Temp = +25 °C, Pulse Width = 100 us, Duty Cycle = 20% 2. Gate leakage per path RF Characterization – Mismatch Ruggedness at 2.9 GHz 1, 2, 3 Symbol Parameter dB Compression Typical VSWR Impedance Mismatch Ruggedness 3 10:1 Notes: 1. Test conditions unless otherwise noted: TA = 25 °C, VD = 36 V, IDQ = 520 mA (combined) 2. Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector. 3. Pulse: 100us, 20% Duty cycle.

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 4 of 18 - www.qorvo.com Measured Load-Pull Smith Charts 1, 2, 3 Notes: 1. Test Conditions: VD = 50 V, IDQ = 260 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 15 for load pull reference planes where the performance was measured. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 2.4GHz, Load-pull 53 52.8 52.6 52.4 52.2 17.3 16.8 16.3 15.8 15.3 71.2 69.2 67.2 65.2 63.2

  • Max Power is 53.1dBm at Z = 2.986-1.098i
  • Max Gain is 17.5dB at Z = 1.484+2.086i
  • Max PAE is 72.9% at Z = 1.484+2.086i Zo = 13.2 3dB Compression Referenced to Peak Gain Zs(fo) = 1.69-4.73i Zl(3fo) = NaN Power Gain PAE

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 5 of 18 - www.qorvo.com Measured Load-Pull Smith Charts 1, 2, 3 Notes: 1. Test Conditions: VD = 50 V, IDQ = 260 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 15 for load pull reference planes where the performance was measured. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 2.8GHz, Load-pull 52.9 52.7 52.5 52.3 52.1 51.9 18.4 17.9 17.4 16.9 16.4 15.9 15.4 66.3 64.3 62.3 60.3 58.3 56.3

  • Max Power is 53dBm at Z = 2.2-1.409i
  • Max Gain is 18.5dB at Z = 1.493+1.663i  = -0.774+0.2008i
  • Max PAE is 67.6% at Z = 1.474+0.774i Zo = 13.2 3dB Compression Referenced to Peak Gain Zs(fo) = 3.85-6.83i Zl(2fo) = NaN Zl(3fo) = NaN Power Gain PAE

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 6 of 18 - www.qorvo.com Measured Load-Pull Smith Charts 1, 2, 3 Notes: 1. Test Conditions: VD = 50 V, IDQ = 260 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 15 for load pull reference planes where the performance was measured. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 3.2GHz, Load-pull 52.7 52.5 52.3 52.1 51.9 51.7 16.5 16 15.5 14.5 65.7 63.7 61.7 59.7 57.7 55.7

  • Max Power is 52.8dBm at Z = 2.211-1.753i
  • Max Gain is 17.4dB at Z = 1.517-0.191i
  • Max PAE is 66.5% at Z = 1.517-0.191i Zo = 13.2 3dB Compression Referenced to Peak Gain Zl(3fo) = NaN Power Gain PAE

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 7 of 18 - www.qorvo.com Measured Load-Pull Smith Charts 1, 2, 3 Notes: 1. Test Conditions: VD = 50 V, IDQ = 260 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 15 for load pull reference planes where the performance was measured. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 -0.4 3.6GHz, Load-pull 52.9 52.7 52.5 52.3 52.1 51.9 17.9 17.4 16.9 16.4 15.9 15.4 64.3 62.3 60.3 58.3 56.3 54.3 52.3

  • Max Power is 52.9dBm at Z = 2.271-2.768i
  • Max Gain is 18.2dB at Z = 1.488-1.034i
  • Max PAE is 65.8% at Z = 1.488-1.034i Zo = 13.2 3dB Compression Referenced to Peak Gain Zs(fo) = 1.82+1.82i Zs(2fo) = 2.4+3.05i Zl(3fo) = NaN Power Gain PAE

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 8 of 18 - www.qorvo.com Typical Measured Performance – Load-Pull Drive-up 1, 2 Notes: 1. Test Conditions: VD = 50 V, IDQ = 260 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 15 for load pull reference planes where the performance was measured. 44 45 46 47 48 49 50 51 52 53 5410 Output Power [dBm] Gain [dB] Gain and PAE vs. Output Power

2.4 GHz - Power Tuned

Zs-fo = 1.69-4.73i Zs-3fo = 8.24-1.15i Zl-2fo = 2.35+1.14i Zl-3fo = NaN 44 45 46 47 48 49 50 51 52 53 5420 PAE [%] Gain PAE 44 45 46 47 48 49 50 51 5212 Output Power [dBm] Gain [dB] Gain and PAE vs. Output Power

2.4 GHz - Efficiency Tuned

Zs-fo = 1.69-4.73i Zs-3fo = 8.24-1.15i Zl-2fo = 2.35+1.14i Zl-3fo = NaN 44 45 46 47 48 49 50 51 5230 PAE [%] Gain PAE 44 45 46 47 48 49 50 51 52 53 5410 Output Power [dBm] Gain [dB] Gain and PAE vs. Output Power

2.8 GHz - Power Tuned

Zs-fo = 3.85-6.83i Zs-2fo = 4.17-9.75i Zs-3fo = 4.71-9.57i Zl-fo = 2.2-1.409i Zl-2fo = NaN Zl-3fo = NaN 44 45 46 47 48 49 50 51 52 53 5420 PAE [%] Gain PAE 44 45 46 47 48 49 50 51 5212 Output Power [dBm] Gain [dB] Gain and PAE vs. Output Power

2.8 GHz - Efficiency Tuned

Zs-fo = 3.85-6.83i Zs-2fo = 4.17-9.75i Zs-3fo = 4.71-9.57i Zl-2fo = NaN Zl-3fo = NaN 44 45 46 47 48 49 50 51 5230 PAE [%] Gain PAE

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 9 of 18 - www.qorvo.com Typical Measured Performance – Load-Pull Drive-up 1, 2 Notes: 1. Test Conditions: VD = 50 V, IDQ = 260 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 15 for load pull reference planes where the performance was measured. 44 45 46 47 48 49 50 51 52 53 5410 Output Power [dBm] Gain [dB] Gain and PAE vs. Output Power

3.2 GHz - Power Tuned

Zs-fo = 13.49-2.67i Zs-2fo = 16.12-1.3i Zs-3fo = 8.53+1.99i Zl-2fo = 2.65-2.02i Zl-3fo = NaN 44 45 46 47 48 49 50 51 52 53 5420 PAE [%] Gain PAE 44 45 46 47 48 49 50 51 5212 Output Power [dBm] Gain [dB] Gain and PAE vs. Output Power

3.2 GHz - Efficiency Tuned

Zs-fo = 13.49-2.67i Zs-2fo = 16.12-1.3i Zs-3fo = 8.53+1.99i Zl-2fo = 2.65-2.02i Zl-3fo = NaN 44 45 46 47 48 49 50 51 5230 PAE [%] Gain PAE 44 45 46 47 48 49 50 51 52 53 5410 Output Power [dBm] Gain [dB] Gain and PAE vs. Output Power

3.6 GHz - Power Tuned

Zs-fo = 1.82+1.82i Zs-2fo = 2.4+3.05i Zs-3fo = 12.37+2.1i Zl-2fo = 8.9+15.68i Zl-3fo = NaN 44 45 46 47 48 49 50 51 52 53 5420 PAE [%] Gain PAE 44 45 46 47 48 49 50 51 5212 Output Power [dBm] Gain [dB] Gain and PAE vs. Output Power

3.6 GHz - Efficiency Tuned

Zs-fo = 1.82+1.82i Zs-2fo = 2.4+3.05i Zs-3fo = 12.37+2.1i Zl-2fo = 8.9+15.68i Zl-3fo = NaN 44 45 46 47 48 49 50 51 5230 PAE [%] Gain PAE

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 10 of 18 - www.qorvo.com Power Driveup Performance Over Temperatures Of 2.9 – 3.3 GHz EVB 1 Notes: 1. Test Conditions: VD = 36 V, IDQ = 520 mA, 100 us Pulse Width, 20% Duty Cycle. 180 190 200 210 220 230 240 250 260 P3dB [W] Frequency [GHz] P3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 55°C 85°C G3dB [dB] Frequency [GHz] G3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 55°C 85°C PAE3dB [%] Frequency [GHz] PAE3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 55°C 85°C

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 11 of 18 - www.qorvo.com Power Driveup Performance At 25°C Of 2.9 – 3.3 GHz EVB 1 Notes: 1. Test Conditions: VD = 36 V, IDQ = 520 mA, 20 us Pulse Width, 20% Duty Cycle. PAE [%] Frequency [GHz] PAE vs. Frequency at 25°C 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 160 170 180 190 200 210 220 230 240 250 260 Gain [dB] Power [W] Frequency [GHz] Output Power and Gain vs. Frequency @ 25°C Power Gain

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 12 of 18 - www.qorvo.com Thermal and Reliability Information - CW (1) Parameter Test Conditions Value Units Thermal Resistance, Peak IR Surface Temperature at Average Power (θJC) PDISS = 288 W, Tbaseplate = 85°C 0.58 ºC/W Channel Temperature, TCH 253 °C Thermal Resistance, Peak IR Surface Temperature at Average Power (θJC) PDISS = 230 W, Tbaseplate = 85°C 0.56 ºC/W Channel Temperature, TCH 213 °C Thermal Resistance, Peak IR Surface Temperature at Average Power (θJC) PDISS = 173 W, Tbaseplate = 85°C 0.52 ºC/W Channel Temperature, TCH 175 °C Thermal Resistance, Peak IR Surface Temperature at Average Power (θJC) PDISS = 115 W, Tbaseplate = 85°C 0.50 ºC/W Channel Temperature, TCH 142 °C Notes: 1. Based on expected carrier amplifier efficiency of Doherty. 2. POUT assumes 25% peaking amplifier contribution of total average Doherty rated power. 3. Thermal resistance is measured to package backside. 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Thermal and Reliability Information - Pulsed (1) Parameter Test Conditions Value Units Thermal Resistance, Peak IR Surface Temperature at Average Power (θJC) PDISS = 230.4 W, Tbaseplate = 85°C Pulse Width = 100 uS Duty Cycle = 5% 0.35 ºC/W Channel Temperature, TCH 166 °C Thermal Resistance, Peak IR Surface Temperature at Average Power (θJC) PDISS = 230.4 W, Tbaseplate = 85°C Pulse Width = 100 uS Duty Cycle = 10% 0.36 °C/W Channel Temperature, TCH 168 °C Thermal Resistance, Peak IR Surface Temperature at Average Power (θJC) PDISS = 230.4 W, Tbaseplate = 85°C Pulse Width = 300 uS Duty Cycle = 20% 0.38 ºC/W Channel Temperature, TCH 173 °C Thermal Resistance, Peak IR Surface Temperature at Average Power (θJC) PDISS = 230.4 W, Tbaseplate = 85°C Pulse Width = 300 uS Duty Cycle = 50% 0.44 ºC/W Channel Temperature, TCH 187 °C Notes: 1. Based on expected carrier amplifier efficiency of Doherty. 2. POUT assumes 25% peaking amplifier contribution of total average Doherty rated power. 3. Thermal resistance is measured to package backside. 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 13 of 18 - www.qorvo.com Pin Configuration and Description 1 Note: 1- The T1G4020036-FS will be marked with the “20036” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number. Pin Symbol Description 2, 5 RF IN / VG Gate 1, 4 RF OUT / VD Drain

3 Source Source / Ground / Backside of part

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 14 of 18 - www.qorvo.com Mechanical Drawing 1 Note: 1- MATERIAL: PACKAGE BASE: CERAMIC / METAL PACKAGE LID: CERAMIC 2- ALL DIMENSIONS ARE IN INCHES. DIMENSION TOLERANCE IS ± 0.005 INCHES, UNLESS NOTED OTHERWISE. 3- PACKAGE METAL BASE AND LEADS ARE GOLD PLATED. 4- PART IS EPOXY SEALED. 5- PARTS MEETS INDUSTRY NI650 FOORPRINT.+ 6- BODY DIMENSIONS DO NOT INCLUDE EPOXY RUNOUT WHICH CAN BE UP TO .020 PER SIDE.

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 15 of 18 - www.qorvo.com 2.9 – 3.3 GHz Application Circuit - Schematic Bias-up Procedure Bias-down Procedure 1. Set VG to -5 V. 1. Turn off RF signal. 2. Set ID current limit to 4 A. 2. Turn off VD 3. Apply 36 V VD. 3. Wait 2 seconds to allow drain capacitor to discharge. 4. Slowly adjust VG until ID is set to 520 mA. 4. Turn off VG 5. Apply RF.

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 16 of 18 - www.qorvo.com 2.9 – 3.3 GHz Application Circuit - Layout PCB material is RO4350B 0.020” thick. 2.9 – 3.3 GHz Application Circuit – Bill of Material Reference Design Value Qty Manufacturer Part Number C4, C5 10uF, 6.3V 2 TDK C1632X5R0J106M130AC C10, C11 1uF, 100V 2 AVX 18121C105KAT2A C12, C13 220uF, 50V 2 United Chemi-Con EMVY500ADA221MJA0G C2, C3 2.7pF 2 ATC 600F2R7AT250X C8, C9 5.6pF 2 ATC 600S5R6AT250X C1 1.6pF 1 ATC 600S1R6AT250X C6, C7 0.5pF 2 ATC 600S0R5AT250X C14 0.8pF 1 ATC 600S0R8AT250X R3, R4 10Ohms 2 Vishay CRCW060310R0FKEA R1, R2 0.001Ohms 2 Stackpole Electronics CSNL1206FT1L00 L1, L2 22nH 2 Coilcraft 0805CS-220X_E_ L3, L4 6.6nH 2 Coilcraft GA3093-AL_ Connectors SMA 2 Gigalane 1101055

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 17 of 18 - www.qorvo.com Recommended Solder Temperature Profile

DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor Datasheet Rev. E, September, 2021 Subject to change without notice - 18 of 18 - www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1B (950V) JESD22-A114 ESD – Charged Device Model (CDM) Class C3 (1000V) JESD22-C101 MSL – Moisture Sensitivity Level MSL3 IPC/JEDEC J-STD-020 (260°C Convection reflow) Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2021 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Solderability Solder profiles available upon request. Package lead plating is NiAu. Au thickness is minimum 60 μin. RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electr ical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:

  • Lead Free
  • Halogen Free (Chlorine, Bromine)
  • Antimony Free
  • TBBP-A (C15H12Br402) Free
  • PFOS Free
  • SVHC Free Pb