STD5406NT4G BYCHIP | Alldatasheet
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VDS= 40V, ID= 150A RDS(ON) < 2 mΩ @ VGS = 10V RDS(ON) < 3 mΩ @ VGS = 4.5V
- Advanced Trench Technology
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- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Pin Assignment TO-252-2L Top View Schematic Diagram www.bychip.cn STD5406NT4G v1.0
Symbol Min. Typ. Max. Unit V(BR)DSS 40 V VDS = 32V, VGS = 0V 1.0 TJ = 55°C 5.0 IGSS ±100 nA Gate Threshold Voltage VGS(th) 1.2 2.5 V 2.0 m 3.0 m gFS 171 S VSD 0.69 1.0 V IS 125 A Ciss 3133 pF Coss 1993 pF Crss 75 pF Rg 2.8 Qg 46 nC Qg 23 nC Qgs 6.2 nC Qgd 6.5 nC tD(on) 6.7 ns tr 20 ns tD(off) 72 ns tf 52 ns trr 50 ns Qrr 29 nC Symbol Unit RJA °C/W RJC °C/W Notes: Gate-Body Leakage Current VDS = 0V, VGS = ±20V Body Diode Reverse Recovery Time IF = 15A, dIF/dt = 100A/s Zero Gate Voltage Drain Current IDSS VDS = VGS, ID = 250A Diode Continuous Current VGS = 10V, ID = 20A Forward Transconductance VDS = 5V, ID = 20A Input Capacitance VGS = 0V, VDS = 20V, f = 1MHz Static Drain-Source ON-Resistance RDS(ON) Body Diode Reverse Recovery Charge Turn-Off Fall Time 1.0 IF = 15A, dIF/dt = 100A/s Parameter Thermal Resistance, Junction-to-Case Typ. Thermal Performance Max. 0.8 Parameter Conditions Drain-Source Breakdown Voltage ID = 250A, VGS = 0V STATIC PARAMETERS Electrical Characteristics (@ TJ = 25°C unless otherwise specified) Diode Forward Voltage IS = 1A, VGS = 0V Output Capacitance Reverse Transfer Capacitance DYNAMIC PARAMETERS (5) TC = 25°C SWITCHING PARAMETERS (5) VGS = 4.5V, ID = 15A application board design. Gate Resistance VGS = 0V, VDS= 0V, f = 1MHz Total Gate Charge (@ VGS = 10V) VGS = 0 to 10V VDS = 20V, ID = 20A Total Gate Charge (@ VGS = 4.5V) Gate Source Charge Gate Drain Charge Turn-On DelayTime VGS = 10V, VDS = 20V RL = 1, RGEN = 6 Turn-On Rise Time Turn-Off DelayTime 1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the thermal & electro-mechanical Thermal Resistance, Junction-to-Ambient 2. This single-pulse measurement was taken under TJ_Max = 150°C. 3. This single-pulse measurement was taken under the following condition [L = 300H, VGS = 10V, VDS = 20V] while its value is limited by 4. The power dissipation PD is based on TJ_Max = 150°C. 5. This value is guaranteed by design hence it is not included in the production test. TJ_Max = 150°C. v2.0 www.bychip.cn STD5406NT4G v2.0