IPD50P04P4-13 BYCHIP | Alldatasheet

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Technical content

Features

 VDS= -40V, ID= -40A RDS(ON) < 12mΩ @ VGS = -10V RDS(ON) < 15mΩ @ VGS = -4.5V

  • Advanced Trench Technology
  • Provide Excellent RDS(ON) and Low Gate Charge
  • Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -40 A Drain Current-Continuous(TC=100℃) ID (100℃) -25 A Pulsed Drain Current IDM -50 A Maximum Power Dissipation PD 80 W Derating factor 0.53 W/℃ Single pulse avalanche energy (Note 5) ASE 544 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.88 ℃/W www.bychip.cn Pin Assignment Schematic DiagramTO-252-2L Top View IPD50P04P4-13 v1.0

Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS GS=0V V ID=-250μA -40 - - V Zero Gate Voltage Drain Current IDSS DS=-V 40V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS GS=±V 20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) DS=VV GS,ID=-250μA -1.5 -1.9 -3.0 V Drain-Source On-State Resistance RDS(ON) GS=V -10V, ID=-12A - 12 14 m Ω Forward Transconductance gFS DS=-5V V,ID=-12A 34 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - - PF 2960 Output Capacitance Coss - - 370 PF Reverse Transfer Capacitance Crss VDS=-20V,VGS=0V, F=1.0MHz - 310 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - - nS 10 Turn-on Rise Time tr - - 18 nS Turn-Off Delay Time td(off) - - nS 38 Turn-Off Fall Time tf VDD=- 20V,ID=-20A VGS=- 10V,RG=3Ω - 24 - nS Total Gate Charge Qg - 72 nC Gate-Source Charge Qgs - 14 nC Gate-Drain Charge Qgd VDS=-20,ID=-12A, VGS=-10V - 15 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) SDV GS=0V V,IS=-20A - -1.2 V Diode Forward Current (Note 2) SI - -40 - A Reverse Recovery Time trr - nS 40 Reverse Recovery Charge Qrr TJ = 25°C, IF =- 20A di/dt = -100A/μs(Note3) - 42 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.bychip.cn IPD50P04P4-13 v2.0

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP. www.bychip.cn IPD50P04P4-13 v5.0