IPD30N06S4L-23 BYCHIP | Alldatasheet
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VDS= 60V, ID= 30A RDS(ON) < 29 mΩ @ VGS = 10V RDS(ON) < 40 mΩ @ VGS =4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Pin Assignment TO-252-2L Top View Schematic Diagram www.bychip.cn IPD30N06S4L-23 v1.0
Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage V GS=0V, ID=250μA 60 - - V IDSS Zero Gate Voltage Drain Current V DS=60V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current V DS=0V, VGS=±20V - - ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 3.0 V RDS(on) Static Drain-Source on-Resistance note3 VGS=10V, ID=15A - 29 mΩ VGS=4.5V, ID=10A - 40 Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1.0MHz - 1488 - pF Coss Output Capacitance - 72 - pF Crss Reverse Transfer Capacitance - 64 - pF Qg Total Gate Charge VDS=30V, ID=15A, VGS=10V - 25 - nC Qgs Gate-Source Charge - 4.5 - nC Qgd Gate-Drain(“Miller”) Charge - 6.5 - nC Switching Characteristics td(on) Turn-on Delay Time VDS =30V, ID=15A, RG=1.8Ω, VGS=10V - 7.5 - ns tr Turn-on Rise Time - 21 - ns td(off) Turn-off Delay Time - 16 - ns tf Turn-off Fall Time - 23.5 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 30 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 120 A VSD Drain to Source Diode Forward Voltage VGS=0V, IS=30A - - 1.2 V trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/μs - 29 - ns Qrr Body Diode Reverse Recovery Charge - 45 - nC Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω, IAS=9.6A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% www.bychip.cn IPD30N06S4L-23 v2.0