CEM4435A BYCHIP | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
Features
VDS= -30V, ID= -9A RDS(ON) < 16 mΩ @ VGS = -10V RDS(ON) < 23 mΩ @ VGS = -4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Absolute Maximum Ratings TC = 25º C, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Continuous Drain Current ID -9 A Pulsed Drain Current (note1) I DM -36 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 2.7 W Single Pulse Avalanche Energy (note3) EAS 231 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 47 ºC/W www.bychip.cn SOP-8 Schematic diagrampin assignment CEM4435A v1.0
Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µ A -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 uA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µ A -1 -3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -3A -- 16 mΩ VGS = -4.5V, ID = -2A -- 23 Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 1253 -- pFOutput Capacitance Coss -- 181 -- Reverse Transfer Capacitance Crss -- 158 -- Total Gate Charge Qg VDD = -15V, ID = -3A, VGS = -10V -- 24.5 -- nCGate-Source Charge Qgs -- 3 -- Gate-Drain Charge Qgd -- 6 -- Turn-on Delay Time td(on) VDD = -15V, ID = -3A, RG = 1Ω -- 8 -- ns Turn-on Rise Time tr -- 9 -- Turn-off Delay Time td(off) -- 26 -- Turn-off Fall Time tf -- 8 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -9 A Body Diode Voltage VSD TJ = 25ºC, ISD = -3A, VGS = 0V -- -- -1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. VDD = -30V, RG = 25Ω, L=0.5 mH, Starting TJ = 25°C 。 www.bychip.cn CEM4435A v2.0
www.bychip.cn CEM4435A v3.0