SM3119NAUC-TRG BYCHIP | Alldatasheet

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Technical content

Features

 VDS= 30V, ID= 80A RDS(ON) < 7 mΩ @ VGS = 10V RDS(ON) < 10mΩ @ VGS = 4.5V

  • Advanced Trench Technology
  • Provide Excellent RDS(ON) and Low Gate Charge
  • Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Pin Assignment TO-252-2L Top View Schematic Diagram www.bychip.cn SM3119NAUC-TRG v1.0

Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 3 V VGS=10V, ID=30A - 7 Drain-Source On-State Resistance RDS(ON) VGS=5V, ID=24A - 10 mΩ Forward Transconductance gFS VDS=5V,ID=24A 20 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 2016 - PF Output Capacitance Coss - 251 - PF Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, F=1.0MHz - 230 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 20 - nS Turn-on Rise Time tr - 15 - nS Turn-Off Delay Time td(off) - 60 - nS Turn-Off Fall Time tf VDD=10V,ID=30A VGS=10V,RGEN=2.7Ω - 10 - nS Total Gate Charge Qg - 60.5 - nC Gate-Source Charge Qgs - 8.1 - nC Gate-Drain Charge Qgd VDS=10V,ID=30A, VGS=10V - 7.8 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=24A - - 1.2 V Diode Forward Current (Note 2) IS - - 80 A Reverse Recovery Time trr - 32 50 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 80A di/dt = 100A/μs(Note3) - 12 20 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω，IAS=35A SM3119NAUC-TRG v2.0

1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： SM3119NAUC-TRG v3.0