AP4224GM BYCHIP | Alldatasheet
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Technical content
Features
VDS= 30V, ID= 9 A RDS(ON) < 16 mΩ @ VGS = 10V RDS(ON) < 24 mΩ @ VGS = 4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features SOP-8 (Dual) Schematic diagram www.bychip.cnPin Assignment AP4224GM v1.0
Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics@ TJ =25°C (unless otherwisestated) (BR)DSSV Drain-SourceBreakdownVoltage VGS=0V,ID=250μA 30 -- -- V DSSI ZeroGateVoltageDrain Current(Tc=25 ℃) V DS=30V,VGS=0V -- -- 1 μA ZeroGateVoltageDrain Current(Tc=125 ℃) V DS=30V,VGS=0V -- -- 100 μA GSSI Gate-BodyLeakageCurrent VGS=±20V,VDS=0V -- -- ±100 nA GS(TH)V GateThresholdVoltage VDS=VGS,ID=250μA 1 2.5 V DS(ON)R Drain-SourceOn-StateResistance ② VGS=10V,ID=8A -- 16 mΩ DS(ON)R Drain-SourceOn-StateResistance ② VGS=4.5V,ID=4A -- 24 mΩ Dynamic Electrical Characteristics@ TJ=25°C (unless otherwise stated) issC Input Capacitance VDS=15V,VGS=0V, f=1MHz -- 455 -- pF ossC OutputCapacitance -- 75 -- pF rssC ReverseTransferCapacitance -- 60 -- pF gR GateResistance f=1MHz -- 3.3 -- Ω gQ Total Gate Charge VDS=15V,ID=8A, VGS=10V -- 11 -- nC gsQ Gate-SourceCharge -- 3 -- nC gdQ Gate-DrainCharge -- 4 -- nC Switching Characteristics d(on)t Turn-onDelayTime VDD=15V, ID=8A, RG=3Ω, VGS=10V -- 7 -- ns rt Turn-onRiseTime -- 10 -- ns d(off)t Turn-OffDelayTime -- 22 -- ns ft Turn-OffFallTime -- 7 -- ns Source- Drain Diode Characteristics@ TJ =25°C (unlessotherwise stated) SDV Forward onvoltage ISD=8A,VGS=0V -- 0.9 1.2 V rrt ReverseRecoveryTime Tj=25℃,Isd=8A, VGS=0V di/dt=500A/μs -- 9.5 -- ns rrQ ReverseRecoveryCharge -- 11.8 -- nC NOTE: ① Repetitiverating;pulsewidthlimitedby max. junctiontemperature. ② Limited byTJmax,startingT J= 25°C,L=0.5mH,R G=25Ω, IAS=6A,V GS=10V. Partnotrecommended foruseabove thisvalue ③ Pulsewidth ≤300μs; dutycycle≤2%. ElectricalCharacteristics www.bychip.cn AP4224GM v2.0
VDS, Drain -SourceVoltage (V) Fig1.Typical Output Characteristics Tj- JunctionTemperature (°C) Fig2.Threshold Voltage Vs. Temperature VGS, Gate -SourceVoltage (V) Fig3.Typical Transfer Characteristics Tj - JunctionTemperature (°C) Fig4.Normalized On-Resistance Vs. Temperature VSD,Source-Drain Voltage (V) Fig5.TypicalSource-DrainDiodeForward Voltage VDS,Drain -Source Voltage (V) Fig6.Maximum Safe Operating Area ID, Drain-Source Current (A) Normalized OnResistance ISD, ReverseDrain Current (A) ID - Drain Current (A) ID, Drain-Source Current (A) VGS(TH), Gate -SourceVoltage (V) TypicalCharacteristics www.bychip.cn AP4224GM v3.0
VDS ,Drain-SourceVoltage (V) Fig7.Typical CapacitanceVs.Drain-SourceVoltage Qg -Total Gate Charge (nC) Fig8.Typical GateChargeVs.Gate-SourceVoltage T1,Square Wave Pulse Duration(sec) Fig9.T1 ,TransientThermal ResponseCurve VGS,Gate-Source Voltage (V) C, Capacitance (pF) Fig10. Unclamped Inductive Test Circuit and waveforms Fig11.SwitchingTime TestCircuit and waveforms TypicalCharacteristicsZθJANormalizedTransient Thermal Resistance www.bychip.cn AP4224GM v4.0