AP4424GM BYCHIP | Alldatasheet
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VDS= 20V, ID= 12 A RDS(ON) < 6 mΩ @ VGS = 4.5V RDS(ON) < 8 mΩ @ VGS = 2.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features SOP-8 Schematic diagrampin assignment www.bychip.cn AP4424GM v1.0
Electrical Characteristics (TA=25 unless otherwise noted)℃ Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 2.0 V VGS=4.5V, ID=6A - 6 m Ω Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=5A 8 Forward Transconductance gFS VDS=10V,ID=6A 20 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 2000 - PF Output Capacitance Coss - 402 - PF Reverse Transfer Capacitance Crss VDS=10V,VGS=0V, F=1.0MHz - 170 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 25 - nS Turn-on Rise Time tr - 15 - nS Turn-Off Delay Time td(off) - 25 - nS Turn-Off Fall Time tf VDD=10V,ID=6A V GS=4. 5V,RGEN=1Ω - 15 - nS Total Gate Charge Qg - 42 - nC Gate-Source Charge Qgs - 10.8 - nC Gate-Drain Charge Qgd VDS=10V,ID=6A, VGS=10V - 9.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=6A - - 1.2 V Diode Forward Current (Note 2) IS - - 12 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production mΩ www.bychip.cn AP4424GM v2.0
1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.bychip.cn AP4424GM v3.0