SSW-408 STANFORD | Alldatasheet

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com PreliminaryPreliminary EDS-101099 Rev -A Product Description Preliminary Product Features High Compression Point : up to 4 Watts

  • HIgh Linearity : TOIP +55dBm @2GHz
  • Low DC Power Consumption
  • Low Insertion Loss : 1.2dB at 2GHz
  • Operates from Positive or Negative 3V to 8V Supplies
  • Low Cost Small Outline Plastic Package

Applications

Analog/Digital Wireless Communications

  • Spread Spectrum
  • AMPS, PCS, DECT, IS-95, IS-136, 802.11, CDPD and GSM. SSW-408 DC-4 GHz High Power GaAs MMIC SPDT Switch Stanford Microdevices’ SSW-408 is a high performance Gal- lium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface mountable small outline plastic package. This single-pole, double-throw reflective switch consumes less than 50uA and can operate with positive or negative 3V to 8V supply voltages, making it suitable for use in both infrastruc- ture and subscriber equipment. This switch can be used in all analog and digital wireless communication systems including (but not limited to) AMPS, PCS, DECT, IS-95, IS-136, 802.11, CDPD and GSM. At +5V or –5V bias, typical output power at 1dB compression is 3 watts. 1dB output power over 4 watts and IP3 over +55dBm may be achieved with higher control voltages. -40 -30 -20 -10 D C 1234 Electrical Specifications at Ta = 25C Isolation vs. Frequency VControl = -5 V GHz dB l o b m y S t s e T & s r e t e m a r a P V 5 - r o 5 + = v s m h o 0 5 = o Z : s n o i t i d n o Cs t i n U. n i M. p y T. x a M s n I s s o L n o i t r e s nIz H G 0 . 1 - 5 0 . 0 = f z H G 0 . 2 - 0 0 . 1 = f z H G 0 0 . 4 - 0 0 . 2 = f B d B d B d 9 . 0 2 . 1 5 . 1 3 . 1 5 . 1 l o s I n o i t a l o sIz H G 0 . 1 - 5 0 . 0 = f z H G 0 . 2 - 0 0 . 1 = f z H G 0 0 . 4 - 0 0 . 2 = f B d B d B d 4 2 8 1 8 2 2 2 8 1 n o R W S V R W S V t u p t u O & t u p n I ) t r o p n o ( z H G 0 . 2 - 5 0 . 0 = f z H G 0 . 4 - 0 0 . 2 = f 2 . 1 5 . 1 f f o R W S V R W S V t u p t u O & t u p n I ) t r o p f f o ( z H G 0 . 2 - 5 0 . 0 = f z H G 0 . 4 - 0 0 . 2 = f 2 . 1 5 . 1 P B d 1 z H G 0 . 2 @ r e w o P t u p t u O n o i s s e r p m o C B d 1 t a V 8 - r o V 8 + = V V 5 - r o V 5 + = V V 3 - r o V 3 + = V B d B d B d 6 3 + 4 3 + 1 3 + P I O T t p e c r e t n I r e d r O d r i hTV 8 - r o V 8 + = V V 5 - r o V 5 + = V V 3 - r o V 3 + = V B d B d B d 5 5 + 3 5 + 0 5 + d I t n e r r u C e c i v eDA u0 4 w s I d e e p S g n i h c t i w S % 0 1 o t % 0 9 r o % 0 9 o t % 0 1 c e sn0 1

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Preliminary EDS-101099 Rev -A SSW-408 DC-4.0GHz GaAs MMIC Switches PreliminaryPreliminary Absolute Maximum Ratings rewoPtupnIFRz HM005>xaMW6 lortnoC/eciveD egatloV V8+roV8- gnitarepO erutarepmeT C58+otC54- egarotS erutarepmeT C051+otC56- lamrehT ecnatsiseR W/Cged02 Pin Out -2.0 -1.5 -1.0 -0.5 0.0 D C 1234 1.0 1.2 1.4 1.6 1.8 2.0 D C 1234 Truth Table Switch Schematic ddV )1eton( 1V )2eton( 2V )2eton( 2J-1J3 J-1J

00 V - woL

)Z-iH( 0V -0 noitalosI )Z-iH( woL ssoL V+ )3eton( 0V + noitalosI )Z-iH( woL ssoL V+ )3eton( V+0 woL ssoL noitalosI )Z-iH( Caution: Appropriate precautions in handling, packaging and testing devices must be observed. Note 1: The “Vdd” pin should be permanently connected to the most positive control voltage. If using positive (0V / 5V) control signals, Vdd = 5V. If using negative (-5V / 0V) control voltages, Vdd = 0V. Note 2: The differential control voltage (v = |V1 - V2|) may be from 3V to 8V in magnitude. Note 3: Decouple “Vdd” to a good RF ground, and use DC blocking capacitors on all RF pins (J1, J2, & J3). Note 1: The switch state shown is when V1 is 3v to 8v greater than V2. niPn oitcnuFn oitpircseD 1D NGd nuorG

21 Vl aitnereffiD

31 Jn iFR

42 Vl aitnereffiD

53 J2 tuoFR

82 J1 tuoFR

Insertion Loss vs. Frequency VControl = -5 V On Port Input/Output VSWR vs. Frequency VControl = -5 V dB GHz GHz