SPA-1318

SPA-1318 STANFORD | Alldatasheet

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. Product Description Preliminary EDS-101429 Rev B Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 SPA-1318

2150 MHz 1 Watt Power Amplifier

• On-chip Active Bias Control
• Power Control Allows Power Consumption Reduction
• Patented High Reliability GaAsHBT Technology
• High Linearity Performance: +48dBm OIP3 Typ.
• Surface-Mountable Plastic Package

Applications

• W-CDMA Systems
• Multi-Carrier Applications Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. l o b m y S s n o iti d n o C t s e T s r e t e m a r a P p m e T s m h O º V c c V C s ti n U n i M p y T x a M n oit a r e p O f o y c n e u q e r F z H M P B d n ois s e r p m o C B d t a r e w o P tu ptu O m B d S 1 nia G la n gi S lla m S B d R W S V R W S V tu p nI P I O tnio P t p e cr etnI r e d r O d rih T tu ptu O m B d e n ot r e p tu o r e w o P m B d c cI tn e rr u C e civ e D A m R ht l-j, d a el n oitc n uj( e c n atsis e R la m r e h T W C º VCC VBIAS RFIN N/C RFOUT/ VCC Active Bias Input Match

SPA-1318 2150 MHz 1 Watt Power Amp. EDS-101429 Rev B Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 2.11 2.12 2.13 2.14 2.15 2.16 2.17 25C -40C 85C 2.11 2.12 2.13 2.14 2.15 2.16 2.17 25C -40C 85C -40 -35 -30 -25 -20 -15 -10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.11 2.12 2.13 2.14 2.15 2.16 2.17 25C -40C 85C 25C -40C 85C 100 150 200 250 300 350 400 450 25C -40C 85C P1dB vs Frequency GHz dBm

2150 MHz Application Circuit Data, Icc=320mA, T=+25C, Vcc=5V

Note: Tuned for Output IP3 Input/Output Return Loss, Isolation vs Frequency GHz dB S11 S22 GHz Gain vs. Frequency dB OIP3 vs. Frequency (POUT per tone = 14dBm) GHz dBm OIP3 vs Tone Power

2.14 GHz

POUT per tone (dBm) dBm S12 Device Current vs. Source Voltage Vcc (V) Device Current (mA)

SPA-1318 2150 MHz 1 Watt Power Amp. EDS-101429 Rev A Phone: (800) SMI-MMIC http://www.stanfordmicro.com 522 Almanor Ave., Sunnyvale, CA 94085 -65 -60 -55 -50 -45 -40 -35 -30 Channel Output Power (dBm) Adjacent Channel Power (dBc) W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power W-CDMA at 2.14 GHz 850-950 MHz Application Circuit Data (Optimized for IP3), Icc=400mA, T=+25C, Vcc=5V, The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH

SPA-1318 2150 MHz 1 Watt Power Amp. EDS-101429 Rev B Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 Vcc 1.8pF 15 nH 8.2pF 10uF 68pF 22pF 5.6pF 1000pF 1.2 nH 8.2pF 360 Ω Z=50Ω, 17.6° Voltage Feed Resistor Bias Circuit (for 5V supply) 2110 -2170 MHz Schematic 2110 -2170 MHz Evaluation Board Layout Vcc SOIC-8 PA ECB-101161 Rev. B Eval Board 1.8pF 8.2pF 10uF Tantalum 22pF 68pF Vpc Vbias 1000pF 15nH 1.2nH 5.6pF 8.2pF 360 Ω

SPA-1318 2150 MHz 1 Watt Power Amp. EDS-101429 Rev A Phone: (800) SMI-MMIC http://www.stanfordmicro.com 522 Almanor Ave., Sunnyvale, CA 94085 n i P n o it c n u F n o it p ir c s e D c it a m e h c S e c i v e D c c V r o w t e n s a ib e vitc a e h t r o f e g a tlo v ylp p u s e h t si C C V n o n w o h s s a n o it a c ol e t a ir p o r p p a e h t n i g n is s a p y B F R m u m it p o r o f d e riu q e r si cit a m e h c s n o it a cilp p a e c n a m r o fr e p s a ib V r o w t e n s a ib e vitc a e h t r o f n ip lo rtn o c s a ib e h t si s a ib V ip sih t o tn itn e rr u c e h t y b t e s sitn e rr u c e civ e D n o it a cilp p A e h t n i n w o h s n o it a r u g ifn o c d e d n e m m o c e R e c n a m r o fr e p F R m u m it p o r o f d e riu q e r si cit a m e h c S nI F R C D la n r e tx e n a f o e s u e h t s e riu q e r n ip sih T ip tu p n i F R o tic a p a c g n ik c olb C N n o itc e n n o c o N c c V /tu O F R n ip sih t o t d e ilp p u s e b dlu o h s s a i B ip s a ib d n a tu p tu o F R si g n is a ib C D e s u a c e B e k o h c F R la n r e tx e n a h g u o r h t d e s u e b dlu o h s r o tic a p a c g n ik c olb C D a ip sih t n o tn e s e r p ylp p u s e h T cit a m e h c s n o it a cilp p a e e s s n o it a cilp p a ts o m n i tu p tu o n A d e s s a p y b lle w e b dlu o h s k r o w t e n s a ib e h t f o e d is e c n a m r o fr e p m u m it p o r o f y r a s s e c e n si k r o w t e n g n ih ct a m D A P E d n G o t s d e e n e g a k c a p e h t f o e d is m o tt o b e h t n o a e r a d e s o p x E m u m it p o r o f d r a o b e h t f o e n alp d n u o r g e h t o t d e r e dlo s e b e b dlu o h s s a iv la r e v e S e c n a m r o fr e p F R d n a la m r e h t d n al d e d n e m m o c e r e h t n i n w o h s s a D A P E e h t r e d n u d e t a c ol e g a p n r e tt a p 5-8 ACTIVE BIAS NETWORK Absolute Maximum Ratings r e t e m a r a P e u l a V ti n U tn e rr u C ylp p u S A m V e g a tlo V e civ e D V n o it a p is si D r e w o P W T e r u t a r e p m e T d a e L g n it a r e p O o t C º r e w o P tu p nI F R W m e g n a R e r u t a r e p m e T e g a r o t S o t C º T e r u t a r e p m e T n o itc n u J g n it a r e p O C º Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed.

SPA-1318 2150 MHz 1 Watt Power Amp. EDS-101429 Rev B Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 r e b m u N tr a P l e e R r e P s e c i v e D e zi S l e e R A P S Part Number Ordering Information XXXX SPA 1318 Package Outline Drawing Recommended Land Pattern .16 [4.02] .11 [2.71] .33 [8.42] .15 [3.81] .24 [6.22] .05 [1.27] .02 [.60] Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 48 hours of opening the sealed shipping materials. Note: XXXX represents the lot code .078 [1.969] DETAIL A .061 [1.549] .155 [3.937] .025 .013 [.33] x 45° .008 .003 [.076] SEATING PLANE BOTTOM VIEW .058 [1.473] TOP VIEW SIDE VIEW END VIEW PARTING LINE .008 [.203] .045 [1.143] .035 [.889] .194 [4.93] .061 [1.549] .016 [.406] .050 [1.27] .194 [4.928] SEE DETAIL A .236 [5.994] .155 [3.937] EXPOSED PAD