SPA-2318 STANFORD | Alldatasheet

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Technical content

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. Product Description Preliminary EDS-101432 Rev B Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085 SPA-2318

2150 MHz 1 Watt Power Amplifier

• High Linearity Performance: +47 dBm Typ. OIP3 at 2140 MHz +21.7 dBm W-CDMA Channel Power at -45 dBc ACP • On-chip Active Bias Control • High Gain: 23 dB Typ. • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package

Applications

• W-CDMA Systems • Multi-Carrier Applications Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. lobmyS :snoitidnoCtseT:sretemaraP Z0 52=pmeTsmhO05= º V0.5=ccV,C stinU .niM .pyT .xaM f0 noitarepOfoycneuqerFz HM0 1120 4120 712 P Bd1 noisserpmoCBd1tarewoPtuptuOm Bd8 2 S 12 niaGlangiSllamSB d3 2 RWSVR WSVtupnI- 1 :5.1 PIO 3 tnioPtpecretnIredrOdrihTtuptuO mBd41+=enotreptuorewoP mBd7 4 FNe rugiFesioNB d0 .5 ccI tnerruCeciveD saibI ,Am01= 1cI ,Am07= 2cI Am023= Am0 04 R l-jht )dael-noitcnuj(ecnatsiseRlamrehTW /Cº2 3 VC1 VBIAS RFIN VPC2 RFOUT/ VC2 Active Bias

SPA-2318 2150 MHz 1 Watt Power Amp EDS-101432 Rev B Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085 25C 85C -40C 25C -40C 85C -40 -34 -28 -22 -16 -10 25C 85C -40C 10 12 14 16 18 20 25C 85C -40C 100 200 300 400 500 600 0123456 25C -40C 85C P1dB vs Frequency GHz dBm

2140 MHz Application Circuit Data, Icc=400mA, T=+25C, Vcc=5V

Note: Tuned for Output IP3 Input/Output Return Loss, Isolation vs Frequency GHz dB S11 S22 GHz Gain vs. Frequency dB Output Third Order Intercept vs. Frequency (POUT per tone = 14dBm) GHz dBm Output Third Order Intercept vs. Tone Power 2.14GHz POUT per tone (dBm) dBm S12 Device Current vs. Source Voltage Vcc (V) Device Current (mA)

SPA-2318 2150 MHz 1 Watt Power Amp

3 EDS-101432 Rev B

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085 -65 -60 -55 -50 -45 -40 -35 -30 19 20 21 22 23 24 25 W-CDMA at 2.14 GHz Channel Output Power (dBm) Adjacent Channel Power (dBc) W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power *Note: IP3 performance degraded due to Device being tuned for optimal ACP performance ycneuqerF0 412z HM )Bd(niaGlangiSllamS4 .32 PCAcBd54-@)mBd(.rwP.hC7 .12 )mBd(3PItuptuO* 4.54 )mBd(Bd1P9 .92 The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH

SPA-2318 2150 MHz 1 Watt Power Amp EDS-101432 Rev B Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085 Vcc 1.8pF 18 nH 5.6pF 10uF Tantalum 39pF 1.5pF 2.7nH 1000pF 56pF 5.6nH 6.8K 300 ohm 1800pF .1uF Tantalum Note: All inductors are Toko LL1608-FS Z=63 Ω , 23.5 ° Z=50 Ω , 27.4 ° 1.8pF 18 nH Z=50 Ω , 13.1 ° Tune for optimal ACP performanceTune for optimal IP3 performance 2110 - 2170 MHz Schematic 2110 - 2170 MHz Evaluation Board Layout Vpc Vbias Eval Board ECB-101161 Rev. B SOIC-8 PA Vcc 39pF 1.5pF 5.6nH Short 18nH 1800pF 5.6pF 56pF 1.8pF 2.7nH 1000pF 10uF Tantalum .1uF Tantalum Note: All inductors are Toko LL1608-FS 6.8K Ω 300 Ω 18nH 1.8pF Tune for optimal ACP performanceTune for optimal IP3 performance

SPA-2318 2150 MHz 1 Watt Power Amp

5 EDS-101432 Rev B

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085 #niPn oitcnuFn oitpircseD 1 1CV sanoitarugifnocehT.rotsisnartegatstsrifehtrofegatlovylppusehtsi1CV .ecnamrofrepFRmumitporofderiuqersicitamehcsnoitacilppanonwohs 2 saibV dednemmoceR.krowtensaibevitcaehtrofniplortnocsaibehtsisaibV .citamehcSnoitacilppAehtninwohssinoitarugifnoc 3 nIFR saroticapacgnikcolbCDlanretxenafoesuehtseriuqernipsihT.niptupniFR .citamehcSnoitacilppAehtninwohs 4 2CPV .egatsdnocesehtrofkrowtensaibevitcaehtrofniplortnocsaibehtsi2CPV .citamehcSnoitacilppAehtninwohssinoitarugifnocdednemmocerehT 8,7,6,5 2CV/tuOFR lanretxenahguorhtnipsihtotdeilppusebdluohssaiB.nipsaibdnatuptuoFR roticapacgnikcolbCDa,nipsihtnotneserpsignisaibCDesuaceB.ekohcFR ylppusehT.)citamehcsnoitacilppaees(snoitacilppatsomnidesuebdluohs sikrowtengnihctamtuptuonA.dessapybllewebdluohskrowtensaibehtfoedis .ecnamrofrepmumitporofyrassecen DAPE dnG ehtotderedlosebotsdeenegakcapehtfoedismottobehtnoaeradesopxE lareveS.ecnamrofrepFRdnalamrehtmumitporofdraobehtfoenalpdnuorg dnaldednemmocerehtninwohssaDAPEehtrednudetacolebdluohssaiv .)6egap(nrettap 5-8 ACTIVE BIAS NETWORK ACTIVE BIAS NETWORK Simplified Device Schematic Absolute Maximum Ratings retemaraPe ulaVt inU V(tnerruCylppuS 1C )0 51A m V(tnerruCylppuS 2C )0 57A m V(egatloVeciveD D)0 .6V noitapissiDrewoP0 .4W T(erutarepmeTdaeLgnitarepO L)5 8+ot04-C º rewoPtupnIFR0 4+W m egnaRerutarepmeTegarotS0 51+ot04-C º T(erutarepmeTnoitcnuJgnitarepO J)0 51+C º Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth,j-l Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed.

SPA-2318 2150 MHz 1 Watt Power Amp EDS-101432 Rev B Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085 rebmuNtraPl eeRrePseciveDe ziSleeR 8132-APS0 05" 7 Part Number Ordering Information XXXX SPA 2318 Package Outline Drawing Recommended Land Pattern .16 [4.02] .11 [2.71] .33 [8.42] .15 [3.81] .24 [6.22] Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 48 hours of opening the sealed shipping materials. Note: XXXX represents the lot code .078 [1.969] DETAIL A .061 [1.549] .155 [3.937] .025 .013 [.33] x 45° .008 .003 [.076] SEATING PLANE BOTTOM VIEW .058 [1.473] TOP VIEW SIDE VIEW END VIEW PARTING LINE .008 [.203] .045 [1.143] .035 [.889] .194 [4.93] .061 [1.549] .194 [4.928] SEE DETAIL A .236 [5.994] .155 [3.937] EXPOSED PAD 1324 8765