SSW-108 STANFORD | Alldatasheet

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Technical content

Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-108 DC-4 GHz High Isolation GaAs MMIC SPDT Switch Product Features High Isolation: 32dB at 2GHz

  • Low DC Power Consumption
  • Non-reflective
  • Broadband Performance - True DC Operation
  • Low Cost Small Outline Plastic Package

Applications

Analog/Digital Wireless System

  • Spread Spectrum
  • GPS The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Electrical Specifications at Ta = 25C Sym bol Param et ers: Test Condi t i ons Uni t s Mi n. Typ. M ax. I ns I nsert i on Loss f = 0. 05-1. 0GHz f = 1. 0-2. 0GHz f = 2. 0-4. 0GHz dB dB dB 0. 8 0. 9 1. 4 1. 3 1. 4 I sol I sol at i on f = 0. 05-1. 0GHz f = 1. 0-2. 0GHz f = 2. 0-4. 0GHz dB dB dB VSW Ron I nput & Out put VSW R (on or l ow l oss st at e) f = 0. 05-1. 0GHz f = 1. 0-2. 0GHz f = 2. 0-4. 0GHz 1. 15 1. 25 1. 50 VSW Rof f I nput & Out put VSW R (of f or i sol at ed st at e) f = 0. 05-1. 0GHz f = 1. 0-2. 0GHz f = 2. 0-4. 0GH z 1. 15 1. 25 1. 50 P1dB Out put Power at 1dB Com pressi on f = 0. 5-4. 0GHz V = - 5V V = - 8V dBm dBm +26 +29 T O IP T h ird O rd e r In te rce p t P o in t f = 0. 5-4. 0GHz V = - 5V V = - 8V dBm dBm +45 +48 Id Devi ce Current uA 40 I sw Swi t chi ng Speed 50% cont rol t o 10% / 90% RF nsec 3 Switches Isolation vs. Frequency VControl = -5 V GHz dB -70 -60 -50 -40 -30 -20 DC 1 2 3 4 7-5

-5 0 Isolation Low Loss Truth Table SSW-108 DC-4 GHz Absorptive SPDT GaAs Switch 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com RF Input Power 2W Max>500MHz Control Volta g e- 1 0 V Operatin g T emperature -45C to +85C Stora g e T emperature -65C to +150C Thermal Resistance 20 de g C/W dB GHz Insertion Loss vs. Frequency VControl = -5 V On Port Input/Output VSWR vs. Frequency VControl = -5 V GHz -2.0 -1.5 -1.0 -0.5 0.0 D C 1234 1.0 1.2 1.4 1.6 1.8 2.0 D C 1234 Switches Switch Schematic 7-6