SPF-3043

SPF-3043 STANFORD | Alldatasheet

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. Preliminary Preliminary Product Description Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 EDS-101772 Rev. A 02468 1 0 3V,20mA 5V,40mA lobmyS Cº52=T,scitsiretcarahCeciveD V SD I,V3= SD )detonesiwrehtosselnu(Am02= stinU .niM .pyT .xaM G XAM niaGelbaliavAmumixaM ZS Z= S Z,* L Z= L* zHG9.0=f zHG9.1=f Bd 5.52 4.22 S 12 niaGnoitresnI ZS Z= L 05= Ω zHG9.0=f zHG9.1=f Bd 5.81 0.81 FN nim erugiFesioNmuminiM ZS=Γ TPO Z, L Z= L* zHG9.0=f zHG9.1=f Bd 52.0 05.0 Bd1P tniopnoisserpmocBd1tuptuO ZS Z= TPOS Z, L Z= TPOL V SD I,V3= SD Am02= V SD I,V5= SD Am04= mBd 5.51 PIO 3 tnioPtpecretnIredrOdrihTtuptuO ZS Z= TPOS Z, L Z= TPOL V SD I,V3= SD Am02= V SD I,V5= SD Am04= mBd 92 VP egatloVffohcniPV SD I,V2= SD Am1.0=V 1 .1-8 .0-5 .0- I SSD tnerruCniarDdetarutaSV SD V,V2= SG V0=A m5 45 .760 01 g pm ecnatcudnocsnarTkaePV SD V,V2= SG g@ pm Sm0 010 51 VB OSG egatloVnwodkaerBecruoS-ot-etaG IG Am30.0= dednuorGecruoS,nepOniarD V0 1-8 - VB ODG egatloVnwodkaerBniarD-ot-etaG IG Am30.0= dednuorGniarD,nepOecruoS V0 1-8 - htR) daelotnoitcnuj(ecnatsiseRlamrehT W/Cº0 51 SPF-3043 Low Noise pHEMT GaAs FET Product Features  DC-10 GHz Operation  Ultra Low NF: 0.25 dB @ 1 GHz 0.50 dB @ 2 GHz  High Assoc. Gain: 25 dB @ 1 GHz 22 dB @ 2 GHz  Low Current Draw for NFopt (3V,20mA)  +32 dBm OIP3, +20 dBm P1dB (5V,40mA)  Low Cost High Performance pHEMT

Applications

 LNA for Wireless Infrastructure  Fixed Wireless Infrastructure  Wireless Data  Driver Stage for Low Power Applications Stanford Microdevices’ SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent OIP3 of 32dBm. It provides ideal performance as a driver stage in many commercial and industrial LNA applications. Typical Gain Performance Frequency (GHz) Gain, Gmax (dB) Gmax Gain Qualification Pending April 2001

SPF-3043 Low Noise pHEMT GaAs FET Preliminary Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 EDS-101772 Rev. A 02468 1 0 -60 -50 -40 -30 -20 -10 02468 1 0 -60 -50 -40 -30 -20 -10 Typical Performance Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The data represents typical performace of the device. De- embedded s-parameters can be downloaded from our website (www.stanfordmicro.com). Gain, Gmax (dB) Gain vs Frequency (3V,20mA) Gain, Gmax (dB) Gain vs Frequency (5V,40mA) Gain Gmax Gain Gmax Frequency (GHz) Frequency (GHz) S11,S22 vs Frequency (3V,20mA) S11,S22 vs Frequency (5V,40mA) Isolation (dB) Isolation (dB) 0.2 0.5 1.0 2.0 5.0 inf 0.2 0.5 1.0 2.0 5.0

1 GHz

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3 GHz

2 GHz

0.2 0.5 1.0 2.0 5.0 inf 0.2 0.5 1.0 2.0 5.0 )zHM( V SD )V( I SD )Am( nimF )Bd( ΓΓΓΓΓ TPO xamG )Bd( Bd1P )mBd( 3PIO )mBd(

SPF-3043 Low Noise pHEMT GaAs FET Preliminary Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 EDS-101772 Rev. A Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board. LC 5. DIE IS FACING UP FOR MOLD AND FACING DOWN 2.25 LC 6. PACKAGE SURFACE TO BE MIRROR FINISH. FOR TRIM/FORM. ie :REVERSE TRIM/FORM. SYMBOL 4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70. 2. DIMENSIONS ARE INCLUSIVE OF PLATING. 3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH 1. ALL DIMENSIONS ARE IN MILLIMETERS. & METAL BURR. NOTE: 0.25 0.10 0.10 0.00 0.80 1.80 0.80 1.85 1.15 MIN b c e HE A D E

0.65 BSC

0.40 0.18 0.40 0.10 1.00 2.40 1.10 1.35 MAX L 0.10 0.30 b1 0.55 0.70 D e HE e E b b1 L C A Package Dimensions Absolute Maximum Ratings retemaraPl obmySe ulaVt inU niarDt nerruCI SD 051A m tnerruCetaGdrawroFI SG 2A m egatloVecruoS-ot-niarDV DS 7V ecruoS-ot-etaGe gatloVV GS 3-V rewoPtupnIFRP NI 51m Bd erutarepmeTgnitarepOT PO 58+ot04-C egnaRerutarepmeTegarotST rots 051+ot04-C noitapissiDrewoPP SSID 034W m erutarepmeTnoitcnuJgnitarepOT J 051+C #niPn oitcnuFn oitpircseD 1e taGt upnIFR 2e cruoS&DNGd aelecuderotselohaivesU.dnuorgotnoitcennoC .elbissopsasdaeldnuorgotesolcsasaivecalP.ecnatcudni 3n iarDt uptuOFR 4e cruoS&DNG2 niPsaemaS Pin Description Part Number Ordering Information rebmuNtraPe ziSleeRl eeR/seciveD 3403-FPS" 70 003 The part will be symbolized with an “F3” and a Pin 1 indicator on the top surface of the package. Part Symbolization Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed.