SSW-308 STANFORD | Alldatasheet

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Technical content

Product Description SSW-308 DC-3 GHz Low Cost GaAs MMIC SPDT Switch Product Features Fast Switching Speed : 3nsec

  • HIgh LInearity : +47dBm IP3
  • Ultra Low DC Power Consumption
  • Low Insertion Loss : 0.7dB at 1GHz
  • Low Cost Small Outline Plastic Package

Applications

  • Spread Spectrum The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Stanford Microdevices’ SSW-308 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, reflective switch consumes less than 40uA and operates with 0V/-5V control voltages. This switch can be used in both analog and digital wireless communication systems including AMPS, PCS, DECT, and GSM. Typical output power at 1dB compression is +28dBm. 1dB output power over 1 watt may be achieved with higher control voltages. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. Symbol Parameters: Test Conditions: Z 0 =50 ohms Uni t s Mi n. Typ. Max. Ins Insertion Loss f = 0.05-1.0GHz f = 1.00-2.0GHz f = 1.00-3.0GHz dB dB dB 0.6 0.9 1.2 0.9 1.3 Isol Isolation f = 0.05-1.0GHz f = 1.00-2.0GHz f = 1.00-3.0GHz dB dB dB VSWRon Input & Output VSWR (low loss state) f = 0.05-1.0GHz f = 1.00-2.0GHz f = 1.00-3.0GHz 1.2:1 1.4:1 1.7:1 P 1dB 1dB Compression at 0.5-2.0GHz V = -8V V = -5V dBm dBm +31 +28 IP

3 Third Order Intercept V = -8V

V = -5V dBm dBm +50 +47 I D Device Current uA 35 Isw Switching Speed 50% control to 10%/90%RF nsec 3 Electrical Specifications at Ta = 25C Switches Isolation vs. Frequency VControl = -5 V GHz dB -50 -40 -30 -20 -10 DC 1 2 3 7-21

SSW-308 DC-3 GHz GaAs MMIC SPDT Switch Absolute Maximum Ratings RF Input Power 2W Max>500MHz Control Voltage -10V Operating Temperature -45Cto +85C Storage Temperature -65C to +150C Thermal Resistance 20 deg C/W Truth Table Insertion Loss vs. Frequency VControl = -5 V On Port VSWR vs. Frequency VControl = -5 V 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com V1 V2 J1-J2 J1-J3 0 -5 Low Loss Isolation -5 0 Isolation Low Loss Switches dB GHz GHz -2.0 -1.5 -1.0 -0.5 0.0 DC 1 2 3 1.0 1.2 1.4 1.6 1.8 2.0 DC 1 2 3 Pin Out Pin Function 1V 1 2J 1 3G N D 4V 2 5J 3 6G N D 7G N D 8J 2 Switch Schematic 7-22