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Page:P2-P1 Plastic-Encapsulate Transistors
FEATURES
Marking : Y2 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -25 V Emitter-Base Voltage V EBO -5 V Collector Current -Continuous IC -1500 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Umiot Collector-base breakdown voltage V CBO IC =-100μA, IE=0 -40 V Collector-emitter breakdown voltage V CEO IC =-0.1mA, IB =0 -25 V Emitter-base breakdown voltage V EBO IE=-100μA, IC =0 -5 V Collector cut-off current ICBO V CB =-40V, IE=0 -0.1 μA Collector cut-off current ICEO V CE =-20V, IB =0 -0.1 μA Emitter cut-off current IEBO V EB =-5V, IC =0 -0.1 μA DC current gain hFE(1) V CE =-1V, IC =-100mA 120 400 hFE(2) V CE =-1V, IC =-800mA 40 Collector-emitter saturation voltage V CE(sat) IC =-800mA, IB =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) IC =-800mA, IB =-80mA -1.2 V Base-emitter on voltage V BE(on) IC =-1V,VCE =-10mA -1 V Base-emitter positive favor voltage V BEF IB =-1A -1.55 V Transition frequency fT V CE = -10V, I C = -50mA f=30MHz
100 MHz
output capacitance C ob (VCB =-10V,IE=0,f=1MHz) 20 pF CLASSIFICATION OF h FE Rank L H J Range 120-200 200-350 300-400 (PNP) 1. BASE 2. EMITTER SOT-23 3. COLLECTO SS8550 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2 Plastic-Encapsulate Transistors Typical Characteristics -0.4 -0.1 -0.2 -0.3 -0.4 -0.5 IB=-4. 0mA IB=-3. 5mA IB=-3. 0mA IB=-2. 5mA IB=-2. 0mA IB=-1. 5mA IB=-1. 0mA IB=-0. 5mA IC[A], COLL ECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -0.1 -1 -10 -1 00 -1000 100 1000 VCE = -1V hFE, DC CURRENT GAIN IC[mA], CO LLECTOR CURRENT -0.1 -1 -1 0 -100 -1000 -10 -100 -1000 -10000 VCE(sa VBE(sa IC=10IB VBE(sat), VCE(sa t)[mV], SATURATION VOLTAGE IC[mA] , COLLECTOR CURRENT -0.0 -0 -0.1 -10 -100 VCE = -1V IC[mA], COL LECTOR CURRENT VBE[V], BASE-EMIT TER VOLTAGE -1 -10 -1 00 -1000 100 f=1MHz IE=0 Cob[pF ], CAPACITANCE VCB[V], CO LLECTOR-BASE VOLTAGE -1 -10 -1 00 -1000 100 1000 VCE=-10V fT[MHz ], CURRENT GAIN-BANDWIDTH PRODUCT IC[mA ], COLLECTOR CURRENT SS8550 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/