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Technical content
Page:P2-P1 Chip Diodes Switching Diode
FEATURES
- Silicon epitaxial planar diode
- SMD chip pattern, available in various dimension included 1206 & 0805
- Leadfree and RoHS compliance components
- For small signal switching and operating ambient temperature less than 55oC and voltage withstand less than 60V; not suitable for AC switching input as rectified circuit and high reverse voltage location MECHANICAL CHARACTERISTICS
- Size: 0603
- Weight: approx. 4mg
- Marking: Cathode terminal THERMAL CHARACTERISTICS 1) Parameter at Tamb =25oC 1) Symbol Value Unit Forward Power Dissipation Power derating above 25oC Ptot 200 mW 1.6 mW/ oC Junction Temperature Tj 150 oC Thermal Resistance Junction to Ambient air R θJA 375 oC/W Operating& Storage Temperature range Tstg -55 to 150 oC MAXIMUM RATING 1) Parameter at Tamb =25oC 1) Symbol Value Unit Repetitive Peak Reverse Voltage V RRM 75 V Average rectified current sin half wave rectification with resistive load IF(AV) 100 mA Repetitive Peak Forward Current at Tamb =25°C IFRM 200 mA Non-Repetitive Surge Forward Current at t<1s and Tj=25oC at t 8.3ms and Tj=25oC IFSM 400 mA 800 mA ELECTRICAL CHARACTERISTICS 1) Parameter at Tamb =25oC 1) Symbol Value Unit Forward Voltage at IF=10mA at IF=100mA V F 1.0MAX V 1.25MAX V Leakage Current at VR =20V Leakage Current at VR =75V IR 0.025MAX uA
5 MAX uA
Capacitance at VR =0V, f=1MHz C tot 4 MAX pF Reverse Recovery Time at IF =IR =10mA,R L=100Ω trr 4 MAX ns 0603 L 1.55±0.1 mm W 0.80±0.1 mm T 0.65±0.1 mm C 0.35±0.1 mm CD4148WTP 1) Valid provided that electrodes are kept at ambient temperature. MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Figure 3. Forward Current De- r