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MAKO SEMICONDUCTOR CO.,LIMITED SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN)
FEATURES
z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) MARKING: 1P /W1P MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Dissipation 300 mW RΘJA Thermal Resistance, Junction to Ambient 417 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V(BR)CBO I C= 10μA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO * I C= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO I E=10μA, IC=0 6 V Collector cut-off current ICBO V CB=60V, IE=0 0.01 μA Collector cut-off current ICEX V CE=30V,VBE(off)=3V 0.01 μA Emitter cut-off current IEBO V EB= 3V, IC=0 0.1 μA hFE(1) * V CE=10V, IC= 150mA 100 300 hFE(2) V CE=10V, IC= 0.1mA 40 DC current gain hFE(3) * V CE=10V, IC= 500mA 42 Collector-emitter saturation voltage VCE(sat) * IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 0.3 V Base-emitter saturation voltage VBE(sat) * IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 2.0 1.2 V Transition frequency fT VCE=20V, IC= 20mA, f=100MHz 300 MHz Delay time td 10 ns Rise time tr VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 25 ns Storage time tS 225 ns Fall time tf VCC=30V, IC=150mA IB1=-IB2=15mA 60 ns *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. SOT-23 1. BASE 2.EMITTER 3.COLLECT OR B,Nov,2011 MAKO SEMICONDUCTOR CO.,LIMITED MAKO SEMICONDUCTOR CO.,LIMITED
0.1 1 10 100 0.1 1 10 100 100 200 300 400 500 0.1 100 0 25 50 75 100 125 150 100 200 300 400 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 02468 1 0 1 2 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 0.0 0.4 0.8 1.2 f=1MHz IE=0/ IC=0 Ta=25℃ VCB/ VEBCob/ Cib —— Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COMMON EMITTER V CE=10V 600 IC Ta=25℃ Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 100 MMBT2222ATypical Characterisitics VBEIC —— COMMON EMITTER V CE=10V 600 Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) Pc —— T a COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ hFE —— 600 β=10 Ta=100℃ Ta=25℃ ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) Static Characteristic 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA IB=0.1mA COMMON EMITTER T a=25℃ COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 600 β=10 ICVBEsat —— Ta=100℃ Ta=25℃ BASE- EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) 500 ICfT —— COMMON EMITTER V CE=20V f=200MHz Ta=25℃ TRANSTION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) B,Nov,2011 MAKO SEMICONDUCTOR CO.,LIMITED MAKO SEMICONDUCTOR CO.,LIMITED