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Page:P2-P1 Plastic-Encapsulate Transistors
FEATURES
Excellent HFE Linearity. High DC current gain Marking : 28S MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO 40 V DCollector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 6 V Collector Current -Continuous IC 1000 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO IC =100μA,IE=0 40 V Collector-emitter breakdown voltage V CEO IC =1mA,I B =0 20 V Emitter-base breakdown voltage V EBO IE=100μA,IC =0 6 V Collector cut-off current ICBO V CB =35V,IE=0 0.1 μA Emitter cut-off current IEBO V EB =5V,IC =0 0.1 μA DC current gain hFE V CE =1V ,IC =1mA V CE =1V ,IC =0.1A V CE =1V ,IC =0.3A V CE =1V ,IC =0.5A 290 300 300 300 1000 Collector-emitter saturation voltage V CE(sat) IC =600mA, IB =20mA 0.55 V Transition frequency fT V CE =10V, IC =50mA 100 MHz Collector output capacitance C ob V CB =10V,IE=0,f=1MHz 9 pF CLASSIFICA TION OF h FE Rank B C D Range 300-550 500-700 650-1000 (NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTO M28S MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2 Plastic-Encapsulate Transistors Typical Characteristics 0.2 0 0.1 100 1000 11 0 100 100 1000 0 25 50 75 100 125 150 100 150 200 250 1 10 100 1000 100 1000 0.1 1 10 100 1000 1 10 100 1000 100 1000 01 23 100 120 140 160 1 10 100 1000 100 1000 VCE=1V COLLCETOR CURRENT IC (mA) BASE-EM MITER VOLTAGE VBE (V) ICVBE — — Ta=100℃ Ta=25℃ ICfT — — TRANS ITION FREQUENCY fT (MHz) COLLECTOR CURRENT I VCE=10V Ta=25℃ COLLECT OR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE T ℃ PC — — Ta COLLECTOR CURRENT IC (mA) BASE-EMIT TER SATURATION VOLTAGE VBEsat (mV) ICVBE sat — — β=30 Ta=100℃ Ta=25℃ 2000 Cob Cib CAPACITANCE C ( pF) REVERSE VOLT AGE V (V) VCB/ VEBCob/ Cib — — f=1MHz IE=0/IC=0 Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=100℃ Ta=25℃ VCE=1V IChFE — — 2000 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA IB=20uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) St atic Characteristic CO MMON EMITTER Ta=25℃ β=30 Ta=100℃ Ta=25℃ COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (mV) COLLECTOR CURRENT IC (mA) ICVCE sat — — M28S MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/