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Technical content
1.5± 0. 4.5± 0. 2.6± 0. 2.1± 0. 1.3± 0.2 0.203M AX 0.2± 0.05 5.1± 0.2
FEATURES
Ratings at 25oC ambient temperature unless otherwise specified Maximum repetitive peak reverse voltage VRRM 40 50 60 80 90 100 V Maximum RMS voltage VRWS 28 35 42 56 63 70 V Maximum DC blocking voltage VDC 40 50 60 80 90 100 V Maximum average forward rectified current at TL=90 IF(AV) A Peak forward surge current 8.3ms single half-sine-wave IFSM A Maximum instantaneous forward voltage at IFM=1.0A (NOTE1) VF V Maximum DC reverse current TJ=25 at rated DC blocking voltage TJ=125 Operating temperature range TJ oC Storage temperature range TSTG oC UNITS -55 ---- +150 IR NOTE: 1.Pulse test: Pulse width 300us,duty cycle 1 % Maximum thermal resistance oC/W -55 ---- +125 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Low forward voltage Schottky barrier rectifier Guardring protection 0.50 0.2 0.5 m A R JL 28 0.75 1.0 0.85 20 30 Case: SMA molded plastic body 1111 Polarity: Color band denotes cathode end MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Mounting position: ANY (DO-214AC)SMA Weight: 0.002 ounces, 0.064 gram MECHANICAL DATA Reverse energy tested High current capability Extremely low thermal resistance SS12 - - - SS110 Dimensions in millimeters 6.0 5.0 SS12 SS13 SS14 SS15 SS16 SS18 SS19 SS110Device marking code Page: P2 - P1 MAKO SEMICONDUCTOR CO.,LIMITED MAKO SEMICONDUCTOR CO.,LIMITED http://www.makosemi.hk/
0.001 0.01 0.1 200 4 0 608 01 00 TJ=125℃ TJ=25℃ CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICRO AMPERES NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, LEAD TEMPERATURE FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS F IG.1 -- FORWARD DERATING CURVE F IG.2-- PEAK FORWARD SURGE CURRENT 0.5 Re sistive or inductive Load C.B.MOUNTED ON 0.2X0.2(5.0X5.0mm) COPPERPAD AREAS 1.0 60 70 80 90 100 110 120 130 140 150 160 170 0 11 010 T L =100 C 3ms Si ngl e Hal f Si ne-W ave (JE D E C M ethod) O 0. 01 SS15-SS16 Pulse Width=300 S 1%DUTY CYCLE 1. 4 SS12-SS14 SS18-SS110 1. 6 SS15-SS110 SS12-SS16 SS18-SS110 SS12-SS14 SS12 - - - SS110 Page: P2 - P2 MAKO SEMICONDUCTOR CO.,LIMITED MAKO SEMICONDUCTOR CO.,LIMITED http://www.makosemi.hk/