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Technical content
Page:P2-P1 Plastic-Encapsulate Transistors
FEATURES
High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 50 V Emitter-Base Voltage V EBO 5 V Collector Current -Continuous IC 0.1 A Collector Power Dissipation PC 0.2 W Junction T emperature TJ 150 Storage T emperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO IC =100μA,IE=0 60 V Collector-emitter breakdown voltage V CEO IC =1mA,I B =0 50 V Emitter-base breakdown voltage V EBO IE=100μA,IC =0 5 V Collector cut-off current ICBO V CB =60V,IE=0 0.1 μA Emitter cut-off current IEBO V EB =5V,IC =0 0.1 μA DC current gain hFE V CE =6V,IC =1mA 90 200 600 Collector-emitter saturation voltage V CE(sat) IC =100mA,I B =10mA 0.3 V Base-emitter saturation voltage V BE(sat) IC =100mA,I B =10mA 1 V Transition frequency fT V CE =6V,IC =10mA 250 MHz CLASSIFICATIONOF h FE Rank L4 L5 L6 L7 Range 90-180 135-270 200-400 300-600 (NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTO C1623 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2 Plastic-Encapsulate Transistors Typical Characteristics C1623 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/