SPA-1218 STANFORD | Alldatasheet
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Technical content
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third p arty. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. Product Description Preliminary EDS-101428 Rev A Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085 SPA-1218
1960 MHz 1 Watt Power Amp with
On-chip Active Bias Control Patented High Reliability GaAsHBT Technology High Linearity Performance: +48dBm OIP3 Typ. Surface-Mountable Plastic Package
Applications
Multi-Carrier Applications Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1950 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. lobmyS :snoitidnoCtseT:sretemaraP Z0 72=pmeT,V5=CCV,smhO05= Cº stinU .niM .pyT .xaM f0 noitarepOfoycneuqerFz HM0 3910 991 P Bd1 noisserpmoCBd1tarewoPtuptuO cV 1 cV,saibV, 2 V0.5= mBd5 .92 S 12 niaGlangiSllamSB d0 .21 S 11 RWSVtupnI- 1 :5.1 PIO 3 tnioPtpecretnIredrOdrihTtuptuO mBd41+=enotreptuorewoP mBd0 .84 ccIV 5=CCV,tnerruCeciveDA m0 23 R ht l-j,) dael-noitcnuj(ecnatsiseRlamrehTW /Cº0 4 VCC VBIAS RFIN N/C RFOUT/ VCC Active Bias Input Match
SPA-1218 1950 MHz 1 Watt Power Amp. EDS-101428 Rev A Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085 25C -40C 85C 25C -40C 85C -40 -35 -30 -25 -20 -15 -10 25C -40C 85C 81 3 1 8 2 3 25C -40C 85C -50 100 150 200 250 300 350 400 012345 25C -40C 85C P1dB vs Frequency GHz dBm
1950 MHz Application Circuit Data, Icc=320 mA, T=+27C, VCC=5V
Note: Tuned for Output IP3 Input/Output Return Loss, Isolation vs Frequency GHz dB S11 S22 GHz Gain vs. Frequency dB Output Third Order Intercept vs. Frequency (P OUT per tone = 11dBm) GHz dBm Output Third Order Intercept vs. Tone Power, 1.96 GHz POUT per tone (dBm) dBm S12 Device Current vs. Source Voltage VS (V) Device Current (mA)
SPA-1218 1950 MHz 1 Watt Power Amp.
3 EDS-101428 Rev A
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085 1930-1990 MHz Schematic 1930-1990 MHz Evaluation Board Layout Vcc 1.8 pF 22nH, LL1608-FS 270pF 0.047uF 10uF, Tantalum 68pF 22pF Z=50Ω, 23.6° 390Ω 100nH, LL1608-FS Vpc Vcc SOIC-8 PA ECB-101161 Rev. B Eval Board Vbias 1.8pF 22nH 270pF 0.047uF 10uF Tantalum 100nH 22pF 68pF LL1608-FS 390W LL1608-FS
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5 ccV/tuOFRs ihtotdeilppusebdluohssaiB.nipsaibdnatuptuoFR gnisaibCDesuaceB.ekohcFRlanretxenahguorhtnip dluohsroticapacgnikcolbCDa,nipsihtnotneserpsi noitacilppaees(snoitacilppatsomnidesueb dluohskrowtensaibehtfoedisylppusehT.)citamehcs sikrowtengnihctamtuptuonA.dessapyblleweb .ecnamrofrepmumitporofyrassecen 6 ccV/tuOFR5 niPsaemaS 7 ccV/tuOFR5 niPsaemaS 8 ccV/tuOFR5 niPsaemaS 5-8ACTIVE BIAS NETWORK Absolute Maximum Ratings retemaraPe ulaVt inU I(tnerruCylppuS D)0 57A m V(egatloVeciveD D)0 .6V noitapissiDrewoP0 .4W T(erutarepmeTgnitarepO PO )5 8+ot04-C º rewoPtupnIFR0 05+W m egnaRerutarepmeTegarotS0 51+ot04-C º T(erutarepmeTnoitcnuJgnitarepO J)0 51+C º Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l
SPA-1218 1950 MHz 1 Watt Power Amp.
5 EDS-101428 Rev A
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085 rebmuNtraPl eeRrePseciveDe ziSleeR 8121-APS0 05" 7 Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. .078 [1.969] DETAIL A .061 [1.549] .155 [3.937] .025 .013 [.33] x 45° .008 .003 [.076] SEATING PLANE BOTTOM VIEW .058 [1.473] TOP VIEW SIDE VIEW END VIEW PARTING LINE .008 [.203] .045 [1.143] .035 [.889] 678 .194 [4.93] .061 [1.549] .194 [4.928] SEE DETAIL A EXPOSED PAD Package Outline Drawing Recommended Land Pattern .16 [4.02] .11 [2.71] .33 [8.42] .15 [3.81] .24 [6.22] XXXX SPA 1218 Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 24 hours of opening the sealed shipping materials. Note: XXXX represents the lot code