SLN-186 STANFORD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz. The SLN-186 needs only 2 DC-blocking capacitors and a bias resistor for operation. Noise figure may be optimized by using 2-element matching at the input to yield <2.0dB noise figure. This 50 Ohm LNA requires only a single supply voltage and draws only 8mA. For broadband applications, it may be biased at 6mA with minimal effect on noise figure and gain. The SLN-186 is available in tape and reel at 1000, 3000 and 5000 devices per reel. SLN-186 DC-4.0 GHz, 3.5 Volt

50 Ohm LNA MMIC Amplifier

Patented, Reliable GaAs HBT Technology

  • Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz
  • High Associated Gain: 22dB Typ. at 2.0 GHz
  • True 50 Ohm MMIC : No External Matching Required
  • Low Current Draw : Only 8mA
  • Low Cost Surface Mount Plastic Package

Applications

AMPS, PCS, DECT, Handsets

  • Tri-Band & Broadband Receivers The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. Symbol Parameters: Test Conditi ons Uni t s Mi n. Typ. Max. NF

50 Ohm

N oise F igure in 50 O hm s: Vds = 3.5V, Ids = 8mA f = DC -1.5 G H z f = 1.5-4.0 GHz dB dB 2.0 2.4 2.4 S

50 Ohm Gain:

Vds = 3.5V, Ids = 8mA f = DC -1.5 G H z f = 1.5-4.0 GHz dB 19 22 VSWR 50 Ohm Match(Input and Output): Vds = 3.5V, Ids = 8mA f = DC -1.5 G H z 3.0:1 NF N oise F igure in 50 O hm s: Vds = 3.2V, Ids = 6mA f = DC -1.5 G H z f = 1.5-4.0 GHz dB dB 2.2 2.6 2.5 S Vds = 3.2V, Ids = 6mA f = DC -1.5 G H z f = 1.5-4.0 GHz dB 14 17 VSWR 50 Ohm Match(Input and Output): Vds = 3.2V, Ids = 6mA f = DC -1.5 G H z 2.5:1 P 1dB Output Power at 1dB Compression: f = DC -1.5 G H z Vd= 3.5V, Id = 8 mA Vd= 3.2V, Id = 6 mA dBm dBm -10 -12 IP Third Order Intercept Point: f = DC -1.5 G H z Vd= 3.5V, Id = 8 mA Vd= 3.2V, Id = 6 mA dBm +5 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Electrical Specifications at Ta = 25C Noise Figure vs. Frequency 1.5 2.5 8 mA 6 mA GHz dB 4-9 Low Noise MMICs

-40 -30 -20 -10 |S11| vs. Frequency |S21| vs. Frequency |S12| vs. Frequency |S22| vs. Frequency Pout & TOIP vs. Frequency Typical S-Parameters Vds = 3.5V, Ids = 8mA SLN-186 DC-4.0 GHz LNA MMIC Amplifier Typical Performance at 25°°°°° C (Vds = 3.5V, Ids = 8mA) Freq GHz |S 11| S11 Ang |S 21| S21 Ang |S 12| S12 Ang |S 22| S22 Ang (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die) -20 -15 -10 -16 -12 Pout TOIP 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com GHz dBm GHz dB GHz dB GHz dB 8mA 6mA Low Noise MMICs -40 -30 -20 -10 GHz dB 4-10

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com SLN-186 DC-4.0 GHz LNA MMIC Amplifier Absolute Maximum Ratings Part Number Devices Per Reel Reel Size SLN-186-TR1 1000 7" SLN-186-TR2 3000 13" SLN-186-TR3 5000 13" Part Number Ordering Information Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. Typical Biasing Configuration Parameter Absolute Maxi mum Device Current 50mA Power Dissipation 440mW RF Input Power 100mW Junction Temperature +200C Operating T emperature -45C to +85C Storage T emperature -65C to +150C Pin Function

1 RF Input

2 Ground

3 RF Output

4 Ground

  • Needs active biasing for constant current source Recommended Bias Resistor Values Supply Voltage(Vs) 3.3V 5V 7.5V 9V 12V 15V 20V Rbias (Ohms) @ 8mA * 188 500 688 1063 1438 2063 Rbias (Ohms) @ 6mA * 300 717 967 1467 1967 2800 4-11 Low Noise MMICs