SHF-0198 STANFORD | Alldatasheet

Document overview

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Technical content

DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET Product Features Patented AIGaAs/GaAs Heterostructure FET Technology

  • +27dBm Output Power at 1dB Compression
  • +38 dBm Output IP3
  • High Power Added Efficiency - up to 40% at Class A
  • 17dB Gain @ 900 MHz, 14dB Gain @ 1.9GHz

Applications

AMPS, PCS Basestations

  • VSAT Product Description 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. Sym bol P a ra m e te rs : Te s t C o n d itio n s Uni t s Mi n . Typ. M ax. Gp Po we r Ga i n f = 0 . 9 GHz f = 1. 9 G Hz f = 2. 5 G Hz dB dB dB P1dB O ut put Poser at 1dB C om pr essi on f = 0. 9 G Hz f = 1. 9 G Hz f = 2. 5 G Hz dB dB dB +26. 5 +26. 3 +27. 5 +27. 3 +27. 0 I P3 O ut put Thi r d O r der I nt er cept Poi nt f = 0. 9 G Hz f = 1. 9 G Hz f = 2. 5 G Hz dB dB dB +38 +38 +37 N Fopt N oi se Fi gur e f = 0. 9 G Hz f = 1. 9 G Hz f = 2. 5 G Hz dB dB dB 1. 8 2. 2 2. 5 Id s s Sat ur at ed Dr ai n C ur r ent : Vds = 3V, Vgs = 0V m A 300 G m Tr ansconduct ance: Vds = 3V, Vgs = 0V m S 175 Vp Pi nch- of f Vol t age: Vds = 3V, I ds = 1m A V - 2. 2 Vbgs G at e- t o- Sour ce Br eakdow n Vol t age V - 20 - 12 Vbgd G at e- t o- D r ai n Br eakdown Vol t age V - 20 - 12 Electrical Specifications at Ta = 25C Stanford Microdevices’ SHF-0198 series is a high perfor- mance AlGaAs/GaAs Heterostructure FET housed in a low-cost stripline-mount ceramic package. HFET technol- ogy improves breakdown voltage while minimizing Schottky leakage current for higher power-added efficiency and improved linearity. Output power at 1dB compression for the SHF-0198 is +27dBm when biased for Class A operation at 9V and 150mA. This HFET is also characterized at 5V for lower voltage applications. This device can be used in both analog and digital wireless communication infrastructure and subscriber equipment including cellular, PCS, CDPD, wireless data and pagers. Output Power vs. Frequency D C 2468 1 0 1 2 dBm GHz 3-21 High Power GaAs FETs

SHF-0198 DC-12 GHz 0.5 Watt HFET |S11| vs. Frequency |S12| vs. Frequency |S22| vs. Frequency TOIP vs. Frequency Typical S-Parameters Vds = 9.0V, Id = 150mA Freq GHz |S 11 | S11 Ang | S21| S21 Ang | S12| S12 Ang | S22| S22 Ang 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com -20 -15 -10 D C 2468 1 0 1 2 -60 -40 -20 D C 2468 1 0 1 2 -20 -15 -10 02468 1 0 1 2 02468 1 0 1 2 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die) dB GHz GHz dB dBm dB GHz GHz High Power GaAs FETs Typical Performance at 25°°°°° C (Vds = 9V, Ids = 150mA) |S21| and MAG vs. Frequency DC 2 4 6 8 10 12 MAG S21 GHz dB 3-22

SHF-0198 DC-12 GHz 0.5 Watt HFET Absolute Maximum Ratings Parameter Symbol Absolute Maximum Drain to Source Voltage V DS +10V Gate to Source Voltage V GS -5V Drain Current I DS IDSS RF Input Power P IN 100 mW Channel T emperature T CH 175 C Storage T emperature T STG -65 to +175 C Thermal Resistance, Junction- Ground Lead R IN 36 degC/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Mounting Surface T emperature = 25° C 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Outline Drawing Pin Designation 1G a t e 2S o u r c e 3D r a i n Part Number Devices Per Tray SHF-0198 100 Part Number Ordering Information 3-23 High Power GaAs FETs