SHF-0186 STANFORD | Alldatasheet
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Technical content
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party . Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. Preliminary Preliminary Product Description Phone: (800) SMI-MMIC http://www.stanfordmicro.com 522 Almanor Ave., Sunnyvale, CA 94085 EDS-101574 Rev A -10 02468 1 0 1 2 lobmyS Cº52=T,scitsiretcarahCeciveD V SD I,V8= QD Am001= stinU .niM .pyT .xaM G XAM niaGelbaliavAmumixaM Z,zHM009=f S Z= S Z,* L Z= L* Z,zHM0691=f S Z= S Z,* L Z= L* Z,zHM00021=f S Z= S Z,* L Z= L* Bd 0.4 4.32 1.02 0.5 S 12 niaGrewoPnoitresnI Z,zHM009=f S Z= L smhO05= Z,zHM0691=f S Z= L smhO05= Bd 7.31 0.81 2.51 S 12 niaG Z,zHM009=f S Z= TPOS Z, L Z= TPOL Z,zHM0691=f S Z= TPOS Z, L Z= TPOL Bd 9.71 6.41 Bd1Pt niopnoisserpmocBd1tuptuO Z,zHM009=f S Z= TPOS Z, L Z= TPOL Z,zHM0691=f S Z= TPOS Z, L Z= TPOL mBd 0.82 8.82 PIO 3 tnioPtpecretnIredrOdrihTtuptuO Z,zHM009=f S Z= TPOS Z, L Z= TPOL Z,zHM0691=f S Z= TPOS Z, L Z= TPOL mBd 9.04 4.04 I SSD tnerruCniarDdetarutaS V SD V,V3= SG V0= Am0 03 gm ecnatcudnocsnarT V SD V,V3= SG V0= Sm5 71 VP egatloVffO-hcniP V SD I,V3= QD Am1= V7 .2-9 .1-0 .1- V sgb Am2.1=sgI,egatloVnwodkaerBecruoS-ot-etaG V0 2-7 1- V dgb Am2.1=dgI,egatloVnwodkaerBniarD-ot-etaG V0 2-7 1- htR) daelotnoitcnuj(ecnatsiseRlamrehT W/Cº6 6 Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0186 is +28 dBm when biased for Class AB operation at 8V and 100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers. SHF-0186 DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET Product Features Patented AlGaAs/GaAs Heterostructure FET Technology +28 dBm P1dB Typical +40 dBm Output IP3 Typical High Drain Efficiency: Up to 46% at Class AB 17 dB Gain at 900 MHz (Application circuit) 15 dB Gain at 1900 MHz (Application circuit) Gmax Guaranteed at 12 GHz
Applications
Analog and Digital Wireless System Cellular PCS, CDPD, Wireless Data, Pagers AN-020 Contains detailed application circuits Gain vs. Frequency Frequency (GHz) GMax(dB) S21 Gmax VDS=8V, IDQ=100mA
SHF-0186 DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET Preliminary Phone: (800) SMI-MMIC http://www.stanfordmicro.com 522 Almanor Ave., Sunnyvale, CA 94085 EDS-101574 Rev A retemaraPl obmySe ulaVt inU egatloVecruoS-ot-niarDV SD 21+V egatloVecruoS-ot-etaGV SG 0ot5-V rewoPtupnIFRP NI 002W m erutarepmeTgnitarepOT PO 4-5 5 8+otC egnaRerutarepmeTegarotST rots -56+ ot5 71C erutarepmeTnoitcnuJgnitarepOT J +571C qerF )zHM( V SD )V( I QD )Am( Bd1P )mBd( *3PIO )mBd( niaG )Bd( 11S )Bd( 22S )Bd( FN )Bd( Z TPOS gaM /Gd0gnA Z TPOL gaM /Gd0gnA Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDSVDS (max) < (TJ - TL)/RTH Typical Performance - Engineering Application Circuits (See AN-020) Data above represents typical performance of the application circuits noted in Application Note AN-020. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.stanfordmicro.com or call your local sales representative. ZSOPT G ZLOPT S D * 15dBm per tone
SHF-0186 DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET Preliminary Phone: (800) SMI-MMIC http://www.stanfordmicro.com 522 Almanor Ave., Sunnyvale, CA 94085 EDS-101574 Rev A -10 02468 1 0 1 2 -50 -40 -30 -20 -10 -10 02468 1 0 De-embedded S-Parameters (Z S=ZL=50 Ohms, V DS=8V, IDQ=100mA, 25/Gb0C) Frequency (GHz) Gain (dB) Isolation (dB) S21 Gmax S12 Gain (dB) Frequency (GHz) T = -40, 25, 85/Gb0C Insertion Gain & Isolation Insertion Gain vs Temperature Note: S-parameters are de-embedded to the device leads. The data represents typical performace of the device. Measured s-parameter data files can be downloaded using a link found on the SHF-0186 device page from our web site at www.stanfordmicro.com. VDS (Volts) IDS (mA) DC-IV Curves (VGS = -2 to 0V, 0.2V steps) 100 150 200 250 300 350 012345678 VGS = 0V VGS = -2V S22 vs Frequency 0.2 0.5 1.0 2.0 5.0 inf 0.2 0.5 1.0 2.0 5.0 5.0
10 GHz
6 GHz
3 GHz
2 GHz 1 GHz
13 GHz
0.2 0.5 1.0 2.0 5.0 inf 0.2 0.5 1.0 2.0 5.0
2 GHz
1 GHz
SHF-0186 DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET Preliminary Phone: (800) SMI-MMIC http://www.stanfordmicro.com 522 Almanor Ave., Sunnyvale, CA 94085 EDS-101574 Rev A Part Number Ordering Information rebmuNtraPe ziSleeRl eeR/seciveD 6810-FHS" 70 001 Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Package Dimensions PCB Pad Layout The part will be symbolized with an “H1” designator on the top surface of the package. Part Symbolization #niPn oitcnuFn oitpircseD 1e taG. nipetaG 2e cruoS&DNGd aelecuderotselohaivesU.dnuorgotnoitcennoC .elbissopsasdaeldnuorgotesolcsasaivecalP.ecnatcudni 3n iarD. nipniarD 4e cruoS&DNG2 niPsaemaS