SFT1445 BYCHIP | Alldatasheet
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VDS= 100V, ID= 18.1 A RDS(ON) < 57 mΩ @ VGS = 10V RDS(ON) < 70 mΩ @ VGS =4.5V
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Symbol Min. Typ. Max. Unit V(BR)DSS 100 V VDS =80V, VGS = 0V 1.0 TJ = 55°C 5.0 IGSS ±100 nA Gate Threshold Voltage VGS(th) 1.2 3.0 V 57 m 70 m gFS 11.0 S VSD 0.70 1.0 V IS 45 A Ciss 187 pF Coss 54 pF Crss 5.0 pF Rg 1.4 Qg 3.9 nC Qg 2.2 nC Qgs 0.50 nC Qgd 1.1 nC tD(on) 2.6 ns tr 3.5 ns tD(off) 9.4 ns tf 5.5 ns trr 30 ns Qrr 16.1 nC Symbol Unit RJA °C/W RJC °C/W Notes: 2.8 IF = 9.0A, dIF/dt = 100A/s Parameter SWITCHING PARAMETERS (5) 2. This single-pulse measurement was taken under T J_Max = 150°C. 3. This single-pulse measurement was taken under the following condition [L = 100H, VGS = 10V, VDD = 50V] while its value is limited by 4. The power dissipation PD is based on TJ_Max = 150°C. 5. This value is guaranteed by design hence it is not included in the production test. TJ_Max = 150°C. 1. Computed continuous curren t assumes the condition of T J_Max while the actual continuous current depends on the thermal & electro-mechanical Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Typ. Thermal Performance Max. VGS = 4.5V, ID = 6.0AStatic Drain-Source ON-Resistance RDS(ON) TC = 25°C Input Capacitance VGS = 0V, VDS = 50V, f = 1MHzOutput Capacitance Reverse Transfer Capacitance DYNAMIC PARAMETERS (5) application board design. Gate Resistance VGS = 0V, VDS= 0V, f = 1MHz Total Gate Charge (@ VGS = 10V) VGS = 0 to 10V VDS = 50V, ID = 9.0A Total Gate Charge (@ VGS = 4.5V) Gate Source Charge Gate Drain Charge Turn-On DelayTime VGS = 10V, VDS = 50V RL = 5.6, RGEN = 6 Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time 3.6 Parameter Conditions Drain-Source Breakdown Voltage ID = 250A, VGS = 0V STATIC PARAMETERS Electrical Characteristics (@ TJ = 25°C unless otherwise specified) Gate-Body Leakage Current VDS = 0V, VGS = ±20V Body Diode Reverse Recovery Time IF = 9.0A, dIF/dt = 100A/s Body Diode Reverse Recovery Charge Zero Gate Voltage Drain Current IDSS VDS = VGS, ID = 250A Diode Continuous Current VGS = 10V, ID = 9.0A Forward Transconductance VDS = 5V, ID = 7.5A Diode Forward Voltage IS = 1A, VGS = 0V www.bychip.cn SFT1445 v2.0