SFT1345 BYCHIP | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
Features
VDS= -100V, ID= -13A RDS(ON) < 180mΩ @ VGS = -10V RDS(ON) < 195mΩ @ VGS = -4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn Pin Assignment Schematic DiagramTO-252-2L Top View SFT1345 v1.0
Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -100 - - V Zero Gate Voltage Drain Current IDSS VDS=-100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±10 μA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.9 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-10A -180 200 m Ω Forward Transconductance gFS VDS=-5V,ID=-5A 12 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 1734 - PF Output Capacitance Coss - 86 - PF Reverse Transfer Capacitance Crss VDS=-50V,VGS=0V, F=1.0MHz - 40 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 12 - nS Turn-on Rise Time tr - 52 - nS Turn-Off Delay Time td(off) - 28 - nS Turn-Off Fall Time tf VDD=-50V,ID=-10A VGS=-10V,RGEN=9.1Ω - 38 - nS Total Gate Charge Qg - 33.1 - nC Gate-Source Charge Qgs - 4.2 - nC Gate-Drain Charge Qgd VDS=-50V,ID=-10A, VGS=-10V - 7.1 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-10A - - -1.2 V Diode Forward Current (Note 2) IS - - - -13 A Reverse Recovery Time trr - 35 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =-10A di/dt = 100A/μs(Note3) - 46 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=-50V,VG=-10V,L=0.5mH,Rg=25Ω www.bychip.cn SFT1345 v2.0