SFT1342 BYCHIP | Alldatasheet

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 VDS= -60V, ID= -50A RDS(ON) < 20mΩ @ VGS = -10V RDS(ON) < 25mΩ @ VGS = -4.5V

  • Advanced Trench Technology
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  • Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn Pin Assignment Schematic DiagramTO-252-2L Top View SFT1342 v1.0

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. T yp. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.5 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µAVDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 100 On-State Drain Currenta ID(on) VDS = -5 V, VGS = - 10 V - 50 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 17 A 0.020 VGS = - 10 V, ID = - 40 A, TJ = 125 °C 0.030 VGS = - 10 V, ID = - 40 A, TJ = 150 °C 0.035 VGS = - 4.5 V, ID = - 14 A Forward Transconductancea gfs VDS = - 15 V, ID = - 17 A 61 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1 MHz 2950 pFOutput Capacitance Coss 380 Reverse Transfer Capacitance Crss 305 Total Gate Chargec Qg VDS = - 30 V, VGS = - 10 V, ID = - 40 A 110 165 nCGate-Source Chargec Qgs 19 Gate-Drain Chargec Qgd 28 Tur n-On Delay Timec td(on) VDD = - 30 V, RL = 0.6 Ω ID ≅ - 40 A, VGEN = - 10 V, RG = 6 Ω 15 23 nsRise Timec tr 70 105 Turn-Off Delay Timec td(off) 175 260 Fall Timec tf 175 260 Source-Drain Diode Ratings and Characteristics TC = 25 °Cb Continuous Current IS - 40 A Pulsed Current ISM - 80 Forward Voltagea VSD IF = - 40 A, VGS = 0 V - 1 - 1.6 V Reverse Recovery Time trr IF = - 40 A, dI/dt = 100 A/µs 45 70 ns 0.025 www.bychip.cn SFT1342 v2.0

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 3 V 012345 VGS = 10 thru 4 V 100 0 1 02 03 04 05 06 0 VGS - Gate-to-Source Voltage (V) - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C 500 1000 1500 2000 2500 3000 3500 4000 0 1 02 03 04 05 06 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C - 55 °C TC = 125 °C 0.000 0.020 0.030 0.040 0.050 0.060 0 1 02 03 04 05 06 07 08 0 - On-Resistance (Ω) ID - Drain Current (A) RDS(on) VGS = 10 V VGS = 4.5 V 0 20 40 60 80 100 120 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 30 V ID = 40 A www.bychip.cn SFT1342 v3.0

THERMAL RATINGS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (Normalized)- On-Resistance TJ - Junction Temperature (°C) RDS(on) VGS = 10 V ID = 17 A - 50 - 25 0 25 50 75 100 125 150 Source-Drain Diode Forward Voltage VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 100 TJ = 25 °C TJ = 150 °C Drain Current vs. Case Temperature TC - Case Temperature (°C) - Drain Current (A)I D 0 25 50 75 100 125 150 Safe Operating Area 100 0.1 1 10 100 - Drain Current (A)I D TC = 25 °C Single Pulse RDS(on)* Limited by P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 P(t) = 1 P(t) = 0.1 BVDSS Limited VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 Duty Cycle = 0.5 Single Pulse 0.02 www.bychip.cn SFT1342 v4.0