SCA-7 STANFORD | Alldatasheet

Document overview

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Technical content

Stanford Microdevices’ SCA-7 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor- mance up to 3 GHz. The heterojunction increases break- down voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 40mA is +24dBm. These unconditionally stable amplifiers provides 21dB of gain and +12dBm of 1dB compressed power and requires only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET. SCA-7 DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Product Features High Output IP3 : +24dBm

  • High Gain : Up to 21dB
  • Cascadable 50 Ohm : 1.5:1 VSWR
  • Patented GaAs HBT Technology
  • Operates From Single Supply
  • Low Thermal Resistance Package

Applications

Cellular, PCS, CDPD

  • Wireless Data, SONET Symbol Param eters: Test Conditions: Id = 40mA, Z 0 = 50 Ohms Uni t s Mi n. Typ. Max. G P Power Gai n f = 0.1-2.0 GHz f = 2.0-3.0 GHz dB dB 18 20 G F Gain Flatness Gain Flatness over any 100 MHz band f = 0.1-2.0 GHz dB dB +/- 1.2 +/- 0.1 P 1dB Output Power at 1dB Compression: f = 0.1-2.0 GHz dBm 12.0 NF Noise Figure f = 0.1-3.0 GHz dB 3.8 IP 3 Third Order Intercept Point Output Tone @ 0dBm 10 MHz Apart f = 0.1-2.0 GHz dBm 23.0 24.0 T D Group Delay f = 1.9 GHz psec 100 ISOL Reverse Isolation f = 0.1-3.0 GHz dB 22 VD Device Voltage V 3.5 4.0 4.5 dG/dT Device Gain Temperature Coefficient dB/degC -0.003 dV/dT Device Voltage Temperature Coefficient mV/degC -4.0 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Electrical Specifications at Ta = 25C Output IP3 vs. Frequency 0 . 1 123 dBm GHz

50 Ohm Gain Blocks

|S11| vs. Frequency |S21| vs. Frequency |S12| vs. Frequency |S22| vs. Frequency Output Power vs.Frequency Typical S-Parameters Vds = 4.0V, Id = 40mA SCA-7 DC-3 GHz Cascadable MMIC Amplifier (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com -20 -15 -10 0.1 1 2 3 0.1 1 2 3 -30 -28 -26 -24 -22 -20 0.1 1 2 3 -20 -15 -10 0.1 1 2 3 1234 dBm dB GHz GHz dB dB GHz GHz dB GHz Freq GHz |S11| S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang Typical Performance at 25°°°°° C (Vds = 4.0V, Ids = 40mA) 5-126

SCA-7 DC-3 GHz Cascadable MMIC Amplifier Absolute Maximum Ratings Parameter Absol ut e Maxi mum Device Current 75mA Power Di s si pat i on 350mW R F Input P ow er 100m W Junction T emperature +200C Operating T emperature -45C to +85C Storage T emperatur e -65C to +150C Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. MTTF vs. Temperature @ Id = 40mA Thermal Resistance (Lead-Junction): 412 C/W 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Typical Biasing Configuration T emperature MTTF (hrs) +85C 1,000,000 +120C 100,000 +150C 10,000 Outline Drawing Pin Designation 1R F i n 2G N D

3 RF out and Bias

The data shown was taken on a 31mil thick FR-4 board with 1 ounce of copper on both sides. The board was mounted to a baseplate with 3 screws as shown. The screws bring the top side copper temperature to the same value as the baseplate. 1. Use 1 or 2 ounce copper, if possible. 2. Solder the copper pad on the backside of the device package to the ground plane. 3. Use a large ground pad area with many plated through-holes as shown. 4. If possible, use at least one screw no more than 0.2 inch from the device package to provide a low thermal resistance path to the baseplate of the package. 5. Thermal resistance from ground lead to screws is 2 deg. C/W. Recommended Bias Resistor Values Supply Voltage (Vs) 5V 7.5V 9V 12V 15V 20V Rbias (Ohms) 25 88 125 200 275 400 5-127 SCA-7