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MAKO SEMICONDUCTOR CO.,LIMITED SOT-23 Plastic-Encapsulate Transistors S8050 TRANSI STOR (NPN)
FEATURES
z Collector Current: IC=0.5A MARKING: J3Y/D9D/ MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO I C=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current I CBO V CB=40 V , IE=0 0.1 μA Collector cut-off current I CEO V CB=20V , I E=0 0.1 μA Emitter cut-off current I EBO V EB= 5V , I C=0 0.1 μA H FE(1) V CE=1V, IC= 50mA 120 350 DC current gain H FE(2) V CE=1V, IC= 500mA 50 Collector-emitter saturation voltage VCE(sat) I=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V Transition frequency f T VCE=6V, IC= 20mA f=30MHz
150 MHz
CLASSIFICATION OF h FE(1) Rank L H Range 120-200 200-350 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAKO SEMICONDUCTOR CO.,LIMITED http://www.makosemi.hk/
0.1 1 10 100 0 25 50 75 100 125 150 100 200 300 400 0.1 100 1 10 100 0.0 0.4 0.8 1.2 048 1 2 1 6 2 0 100 fT —— I C hFE —— COMMON EMITTER VCE=1V 3 30 500 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=25℃ Ta=100℃ ICVCEsat —— 500 500 100 30.3 20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz I E=0/ IC=0 Ta=25℃ VCB/ VEBCob/ Cib —— CAPACITANCE C (pF) 1000 100 VCE=6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) S8050Typical Characterisitics COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ PC —— T a 500 VBEIC —— 0.3 Ta=25℃ Ta=100℃ COMMON EMITTER VCE=1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) 303 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ 500 ICVBEsat —— Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 400uA 350uA 300uA 250uA 200uA 150uA 100uA IB=50uA COMMON EMITTER T a=25℃ MAKO SEMICONDUCTOR CO.,LIMITED http://www.makosemi.hk/