S6006DS2

S6006DS2 HAOPIN | Alldatasheet

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UnitSYMBOL PARAMETER Value VDRM 600 V ITR M S 6 A ITAV 3.8 A Repetitive peak off-state voltages RMS on-state current full sine wave Average on-state current Simplified outlineSymbol 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs S6006DS2TM HPM

Description

Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. a g k Cathode anode gate anode TO-252 123 SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Rth j-a Thermal resistance Junction to am bient In free air 70 K/W- - Rth j-mb Thermal resistance Junction to mounting base K/W2.0- -

Limiting values in accordance with the Maximum system(IEC 134) 2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs S6006DS2 SYMBOL PARAMETER CONDITIONS MIN Value UNIT SYMBOL CONDITIONS MIN VRRM IT(RMS) Repetitive peak reverse voltage RMS on-state current V IGM Peak gate current - 600 T =25 C unless otherwise statedJ O Static characteristics IGT VTM V DI/Dt GT I I DRM RRM DC gate trigger voltage Maximum rate-of-rise of on-state current; Dc gate trigger current On-state voltage Peak off-state forward and reverse current at V and VDRM RRM Tc=125 ,V Tc=125 ,V DRM RRM UNITMAXTYP 1.6- - 100 - - 0.5 0.5 mA mA VD=12V,RL=60 VD=12V dc,RL=60 IGT=150mA with<=0.1 s rise time, Ta=25 ,itm=0.6A,instantaneous value - - 1.5 200 V A/ s V A A A ITSM It I t for fusing Ttg Tq PGM Peak one-cycle forward surge current Average gate power dissipation Peak gate power dissipation Gate controlled tum-on time;gate pulse=100mA; minmum width=15 s with rise time=<0.1 s Circuit commutated tum-off time RMS surge (non-repetitive)on-state current for period of 8.3ms for fusing 60Hz 50Hz A A - 20 s s W W As 100 0.5 IH PG(AV) PARAMETER V =12V; I =0.1ADG T Dynamic Characteristics D/ d tVD tgt tg Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated tum- off time time 100 100 V =67% V ;Tj=125 ;DM DRM(max) Exponential wave form;R =100GK I =10A;V =V ;TM D DRM(max) I= 5 m A ;G Dl /dt=0.2A/ sG dv /dt=2V/ s;R =1kDG K s s V/ s V =67% V ;Tj=125 ;I =12A V =24V;dI /dt=10A/ S DM DRM(max) TM RT M

3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs S6006DS2 RMSOn-stateCurrent[lT(RMS)]-Amps 120 100 Maximum AllowableAmbient Temperature (Ta)- C o CURRENT WAVEFORM:Sinusoidal LOAD:Resistive or lnductive CONDUCTION ANGLE:180 FREE AIR RATING 6A TO-251 Figure E6.1 Maximum allowable ambient temperature versus RMS On-state current 1.0 0.8 0.6 0.4 0.2 25 50 75 100 125 Case temperature(Tc)- C o Normalized peak Current Figure E6.4 peak capacitor discharge current derating(6A) 120 100 Average on-state current[I ]-Amps T(AV) Maximum Allowable Ambient Temperature(T )- C A o CURRENT WAVEFORM:Snusoidal LOAD Resistive or lnductive CONDUCTION ANGLE:18 FREEAIR RATING6A TO-251 Figure E6.2 Maximum Allowable Ambient Temperature Versus Average on-state Current Figure E6.6 Maximum Allowable case temperature versus RMS On-state current 6A 130 120 110 100 02 4 6 81 0 1 2 RMS On-state Current[I ]-AmpsT(RMS) Maximum Allowable Case Temperature(Tc)- C o CURRENT WAVEFORM:Sinusoidal LOAD:Resistive or lnductive CONDUCTION ANGLE:180 CASE TEMPERATURE:Measure as shown on dimensional drawings o 6A Devices Figure E6.3 Peak Capacitor Discharge Current(6A) 0.5 1.0 2.0 5.0 10 20 50 1000 300 200 100 Pulse Current Duration(tw)-ms Peak Discharge Current(I )-Amps TM 6A devices ITM Tw tw=5 times constants I( T c = 2 5C )H o IH Ratio of Case Temperature(Tc)- C o 2.0 1.5 1.0 0.5 0 -40 -15 +25 +65 +105 +125 Figure E6.5 Normalized dc Holding Current versus Case Temperature

4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs S6006DS2 I (Tc=25 C)H o IGT Ratio of Case Temperature(Tc)- C o 2.0 1.5 1.0 0.5 0 -40 -15 +25 +65 +105 +125 Figure E6.7 Normalized dc Gate-Trigger Current versus Case Temperature Figure E6.8 Normalized dc Gate-trigger Voltage versus Case Temperature V (Tc=25 C)GT o VGT Ratio of Case Temperature(Tc)- C o 1.5 1.0 0.5 -40 -15 +25 +65 +105 +125 Instantaneous On-state Voltage(V )-VoltsT Instantaneous On-state Current(I )-Amps T 6A Devices Figure E6.9 Instantaneous On-state Current versus On-state Voltage (Typical) 6A 6A Devices Tc=25 C 10 20 30 40 50 60 80 100 200 DC Gate Trigger Current(I )-mAGT Turn-on Time(t )- s gt Figure E6.10 Typical Turn-on Time versus Gate-trigger Current Figure E6.11 Power Dissipation(Typical) versus RMS On-state Current (6A) 6A Devices CURRENT WAVEFORM:Half Sine Wave LOAD:Resistive or lnductive CONDUCTION ANGLE:180 o 0 2 4 6 8 10 12 14 16 18 20 RMS On-state Current[I ]-Amps T(RMS) Average On-state Power Dissipation[P -Watts D(AV)] Peak Surge(Non-repetitve)On-state Current(I )-Amps TSM 1 2 3 4 5 67 8 10 20 30 40 60 80100 200 300400600 1000 1000800 600500 400 300 200 10080 6050 108 Notes: 1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value. 6A Devices Surge Current Duration-Full Cycles Figure E6.12 Peak Surge Current versus Surge Current Duration

5/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MECHANICAL DATA Dimensions in mm Net Mass: 0.45g TO-252(DPAK) S6006DS2