MAC97A8 HAOPIN | Alldatasheet
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Main terminal 1 (T1) gate (G) Main terminal 2 (T2) UnitSYMBOL PARAMETER Value VDRM 600 V ITR M S 0.6 A ITSM 8 A Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current SYMBOL PARAMETER MAX UNIT R JA CONDITIONS TYPMIN - - 200 Simplified outlineSymbol T2 T1 G 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs MAC97A8TM HPM Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Thermal resistance Junction to case /W -- 75 Thermal resistance Junction to ambient R JC TO-92 123
Limiting values in accordance with the Maximum system(IEC 134) 2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs TM HPM MAC97A8 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VDRM IT(RMS) It dI /dtT IGM VGM PGM Repetitive peak off-state Voltage on-state RMS current Non-repetitive surge current one full cycle I t for fusing Repetitive rate of vise of on-state current after trigering Peak gate current Peak gate voltage Peak gate power V V A W full sine wave 50 to 60Hz;Tc= 50 t=8.3ms I= 1 A ; I = 0 . 2 A ;TM G T2+G+ T2+G- T2-G- T2-G+ 600 A A AS 0.6 0.26 s s s s T j = - 4 0t o1 1 0 ITSM sine wave 60 Hz Tc= 110 dl /dt = 0.2A/ sG t 2 s ,Tc=80 t 2 s ,Tc=80 t 2 s ,Tc=80 Tstg Tj PG(AV) Average gate power Storage temperature Operating junction temperature -40 -40 110 0.1 150 t=2 sm a xT= 8 0case SYMBOL PARAMETER CONDITIONS MIN T =25 C unless otherwise statedJ O Static characteristics IGT VGT IH VTM I I DRM RRM Dynamic Characteristics Gate trigger current Gate trigger voltage Holding current Peak On-state current Peak repetitive blocking current V =12V; R =100 OhmsDL V =12V; R =100 OhmsDL T2+G+ T2+G- T2-G- T2-G+ V =12V;Initiating current =200 mA,gate openD I = 0.85A peak;pulse width 2.0ms,duty cycle 2.0% TM + V =Rated V V ;gate open Tj=25 Tj=110 D DRM , RRM UNITMAXTYP 101.5 100 mA mA mA mA mA T2+G+ T2+G- T2-G- T2-G+ 2.0 2.0 2.0 2.5 .66 .77 .84 .88 V V V V 1.9 V dv/dt tgt Critical rate of rise of off-state voltage Gate controlled turn-on time V = rated V ;I = 0.84A; commutating dl/dt = 0.3A/ms Tc=50 D DRM TM I= 1 A ; V = V ;TM D DRM(max) I =25mA;G s A dv/dt(c) Critical rate of rise of commutation voltage exponential waveform;gate open circuit; V =67% of V ;D DM(max) T= 1 1 0 ;case 25 V/ s/ V/ s/ dl /dt=5A/G s
Description
3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs TM HPM MAC97A8
4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs TM HPM MAC97A8
HAOPIN MICROELECTRONICS CO.,LTD. TM HPM MECHANICAL DATA 5/5http://www.haopin.com Sensitive Gate Triacs Dimensions in mm Net Mass: 0.2 g TO-92 MAC97A8