MCR72 HAOPIN | Alldatasheet
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UnitSYMBOL PARAMETER Value VDRM 400 600 V ITR M S 8 A ITSM 100 A Repetitive peak off-state voltages SYMBOL PARAMETER MAX UNIT R JC R JA CONDITIONS TYPMIN - - 2.2 ¼http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs MCR72TM HPM
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Pin Description Cathode (K) Anode (A) Gate(G) Anode Simplified outlineSymbol a g k On-state rms current Peak non-repetitive surge current MCR72-6 MCR72-8 Thermal resistance Junction to Case Thermal resistance Junction to am bient TO-220 123
2/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MCR72 A A AS Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT SYMBOL PARAMETER CONDITIONS MIN V V DRM RRM IT(RMS) ITSM It IGM VGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages on-state RMS current Peak Non-repetitive surge current Circuit Fusing Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Range Operating junction Temperature Range V V A W W TC=83 1/2Cycle.60 Hz, Tj=-40 to110 Tj=-40to110 ,Sine Wave, 50to60Hz,Gage openT=8.3ms MCR72-6 MCR72-8 T<=10us T<=10us T<=10us -40 -40 400 600 +110 T =25 C unless otherwise statedJ O Static characteristics IH I, IRRM DRM TJ=25 TJ=110 Peak Repetitive Forward or Reverse Blocking current(1) (V =Reted V orV ;R =1k ) AK DRM RRM GK VTM VGT Dynamic Characteristics OFF CHARACTERISTICS D/ d tV tgt Holding current Peak forward on-state voltage Gate trigger voltage Critical rate of rise of Off-state voltage Gate controlled turn-on time V =12V,I =100mADT M V =12V;RL=100 V =Rated V ,R =10k ,Tj=110 D D DRM L I =16A peak,pulse width<=1msTM UNITMAXTYP 0.1 0.5 1.7 mA V V Rated V , ;Tj=110 ;D= DRM Exponential waveform; I =16A;V =Rated V ,IG=2mATM D DRM 100 1.5 500 2.0 V 1.0 0.75 +150 s V/ s IGT Gate trigger current V =12V; RL=100D 20030 A A
¾http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MCR72
Net Mass: 2 g 4/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MCR72