BT152 HAOPIN | Alldatasheet
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UnitSYMBOL PARAMETER Value VDRM RRMV 400R 600R 800R 450 650 800 V ITR M S 20 A ITSM 200 A Repetitive peak off-state voltages Voltages RMS on-state current Non-repetitive peak on-state current 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs BT152TM HPM
Description
a g k SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Rth j-a Thermal resistance Junction to ambient In free air 60 K/W- - Rth j-mb Thermal resistance Junction to mounting base K/W1.1- - Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. TO-220 123
Limiting values in accordance with the Maximum system(IEC 134) 2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT152 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT TSMI I I TAV T(RMS) It DI /dtT IGM VGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Average on-state current Non-repetitive peak On-state current I t for fusing Repetitive rate of vise of on-state current after trigering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature V V A W W Half sine wave;Tmb<=103 All conduction angles half sine wave; Tj = 25 prior to surge T=10ms I =50 A; I =0.2 A;TM G D /dt=0.2 A/ sIG T=10ms T=8.3ms Over any 20 ms period -40 - 125 A A A A AS A/ s 200 220 200 200 0.5 150 VDRM RRMV 500R 650R 800R 500 650 800 SYMBOL PARAMETER CONDITIONS MIN T =25 C unless otherwise statedJ O Static characteristics IGT IL IH VT VGT ID Dynamic Characteristics D/ d tVD tgt tg Gate trigger current Latching current On-state voltage Holding current Gate trigger voltage Off-state leakage current Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated tum- off time time V =12V; I =0.1ADT V =12V; I =0.1ADG T V =12V; I =0.1ADG T I =40AT V =12V;I =0.1ADT V =V ;I =0.1A;T =125 CD DRM(max) T J O V= V ; V= V T= 1 2 5CD DRM(max) R RRM(max) J O UNITMAXTYP 0.25 200 300 1.4 1.75 0.6 0.4 0.2 1.0 mA mA V V =67% V ;Tj=125 C;DM DRM(max) o exponential wave form; gate open circuit I =40A;V =V ;TM D DRM(max) I =0.1A;G Dl /dt=5A/ sG Dl /dt=50V/ s;R =100GG K 323 - 8025 mA 1.5 V V s s V/ s V =67% V ;Tj=125 C;I =50A V =25V;dI /dt=30A/ S DM DRM(max) TM RT M o mA-
3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT152
4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT152
http://www.haopin.com MECHANICAL DATA Dimensions in mm Net Mass: 2 g 5/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT152