BT151S HAOPIN | Alldatasheet

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Technical content

Features

UnitSYMBOL PARAMETER Value VDRM RRMV 500R 650R 800R 500 650 800 V ITR M S 12 A ITSM 100 A Repetitive peak off-state voltages Voltages RMS on-state current full sine wave Non-repetitive peak on-state current Simplified outlineSymbol 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs BT151STM HPM

Description

Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. a g k TO-252 cathode anode gate anode SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Rth j-a Thermal resistance Junction to ambient 75 K/W- - Rth j-mb Thermal resistance Junction to mounting base K/W1.8- -

Limiting values in accordance with the Maximum system(IEC 134) 2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs SYMBOL PARAMETER CONDITIONS MIN MAX UNIT SYMBOL PARAMETER CONDITIONS MIN V, VDRM RRM I I T(RMS) TSM It dI /dtT IGM VRGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Non-repetitive peak On-state current I t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature V V A W W all conduction angles half sine wave; T j=2 5 prior to surge T=10ms I =20A; I =50mA;TM G dI /dt=50mA/ sG T=10ms T=8.3ms Over any 20 ms period -40 - 125 T =25 C unless otherwise statedJ O Static characteristics IGT IL IH VT VGT I, IDR Dynamic Characteristics dV /dtD tgt tq Gate trigger current Latching current On-state voltage Holding current Gate trigger voltage Off-state leakage current Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated turn- off time time V =12V; I =0.1ADT V =12V; I =0.1ADG T V =12V; I =0.1ADG T I =23AT V =12V;I =0.1ADT V =V ;I =0.1A;T =125D DRM(max) T J V= V ; V= V T= 1 2 5D DRM(max) R RRM(max) J UNITMAXTYP 0.25 200 130 1000 1.4 1.75 0.6 0.4 0.1 0.5 mA mA V V =67% V ;Tj=125 ;DM DRM(max) exponential waveform; Gate open circuit R =100GK I =40A;V =V ;TM D DRM(max) I =0.1A;G dl /dt=5A/ sG dV /dt=50V/ s;R =100DG K 152 - 4010 mA A A A AS A/ s 100 110 1.5 V V 7.5 0.5 150 s s V/ s V =67% V ;Tj=125 C;I =20A V =25V;dI /dt=30A/ s D DRM(max) TM RT M o mA- IT(AV) Average on-state current half sine wave ; Tmb<=103 A BT151S 500R 650R 800R 500 650 800

3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT151S

4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT151S

Net Mass: 0.45 g TO-252 5/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT151S