MAC4DHM HAOPIN | Alldatasheet

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Main terminal 1 (T1) gate (G) Main terminal 2 (T2) Main terminal 2 (T2) UnitSYMBOL PARAMETER Value VDRM 600 V ITR M S 4 A ITSM 40 A Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current Simplified outlineSymbol T2 T1 G 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs MAC4DHM GMAC4DHM GTM HPM Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. TO-252 123 SYMBOL PARAMETER MAX UNIT Rj c Rj a Thermal Resistance - Junction-to-case Thermal resistance - Junction to ambient TYPMIN - - 3.5

2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs TM HPM Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VDRM IT(RMS) It IGM VGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Circuit fusing consideration Peak gate current Peak gate voltage Peak gate power Pulse width 10 s Tc=93 Pulse width 10 s Tc=93 Pulse width 10 s Tc=93 t=8.3ms Tc=108Average gate power Storage temperature Operating junction Temperature range V V W A W Full sine wave 60 Hz t=8.3ms Tc=93 Tj=-40 to 110 ,sine wave, 50 to 60 Hz,Gate open - - 6.6 - 0.2 - 5 - 0.1 0.5 -40 -40 600 110 150 A As SYMBOL PARAMETER CONDITIONS MIN T =25 C unless otherwise statedJ O Static characteristics IGT VGT IL I I DRM RRM V =Rated V ,V ; Gate open D DRM RRM IH VTM VGD Dynamic Characteristics D/ d tV (dl/dt)c Gate trigger current Gate trigger voltage Latching current Peak Repetitive blocking current Holding current Peak on-state voltage I = 6.0ATM + Gate Non-trigger voltage Critical rate of rise of Off-state voltage Rate of change of commutating current V =12V;R =100DL V =12V;R =100DL V =12V;R =100DL V =12V,I =5.0 mA V =12V,I =5.0 mA V =12V,I =5.0 mA V =12V,I =10 mA DG DG DG DG V =12V,gote open,lnitiating current= 200mAD + Tj=25 Tj=125 Tj=110 UNITMAXTYP 0.5 0.5 0.5 0.5 1.75 5.2 2.1 2.2 0.62 0.57 0.65 0.74 1.3 1.3 1.3 1.3 0.1 0.4 20 -- - - 3.0 1.5 1.3 1.6 mA V/ s A/ms V V =67% V gate open;Tj=110 ;D DRM V =200V, I =1.8A Tj=110 , f=250 Hz,CL=5.0 fd, LL=80 mH,RS=56 CS=0.03 fd DT M dv/dt=1.0V/ s 1.8 2.1 2.4 4.2 mA V MT2(+),G(+) MT2(+),G(-) MT2(-),G(-) MT2(-),G(+) MT2(+),G(+) MT2(+),G(-) MT2(-),G(-) MT2(-),G(+) MT2(+),G(+) MT2(+),G(-) MT2(-),G(-) MT2(-),G(+) 0.01 2.0- mA mA V MAC4DHM GMAC4DHM G

Description

3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs TM HPM MAC4DHM GMAC4DHM G

4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs TM HPM MAC4DHM GMAC4DHM G

HAOPIN MICROELECTRONICS CO.,LTD. TM HPM MECHANICAL DATA Dimensions in mm Net Mass: 0.45 g 5/5http://www.haopin.com Sensitive Gate Triacs MAC4DHM GMAC4DHM G