RFD14N05SM9A BYCHIP | Alldatasheet

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Features

 VDS= 60V, ID= 50A RDS(ON) < 73mΩ @ VGS = 10V RDS(ON) < 85 mΩ @ VGS =4.5V

  • Advanced Trench Technology
  • Provide Excellent RDS(ON) and Low Gate Charge
  • Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Pin Assignment TO-252-2L Top View Schematic Diagram www.bychip.cn RFD14N05SM9A v1.0

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS VGS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, V GS = 0 V 1 µAVDS = 60 V, V GS = 0 V, TJ = 125 °C 50 VDS = 60 V, V GS = 0 V, TJ = 150 °C 250 On-State Drain Currenta ID(on) VDS 10 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 6.6 A 0.073 VGS = 4.5 V, ID = 6 A 0.085 Forward Transconductancea gfs VDS = 15 V, ID = 6.6 A 25 S Dynamicb Input Capacitance Ciss VDS = 30 V, VGS = 0 V, f = 1 MHz 660 pFOutput Capacitance Coss 85 Reverse Transfer Capacitance Crss 40 Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 6.6 A 19.8 30 nCGate-Source Chargec Qgs 3.6 Gate-Drain Chargec Qgd 4.1 Gate Resistance Rg f = 1 MHz 0.4 2 4  Tur n-On Delay Timec td(on) VDD = 30 V, RL = 9.6  ID  5.2 A, VGEN = 10 V, Rg = 1  81 6 ns Rise Timec tr 11 20 Turn-Off Delay Timec td(off) 18 27 Fall Timec tf 51 0 Tur n-On Delay Timec td(on) VDD = 30 V, RL = 9.6  ID  5.2 A, VGEN = 4.5 V, Rg = 1  38 57 Rise Timec tr 58 87 Turn-Off Delay Timec td(off) 18 27 Fall Timec tf 81 6 Drain-Source Body Diode Ratings and Characteristicsb TC = 25 °C Continuous Current IS 18 A Pulsed Current ISM 25 Forward Voltagea VSD IF = 5.2 A, VGS = 0 V 0.8 1.5 V Reverse Recovery Time trr IF = 5.2 A, dI/dt = 100 A/µs 34 51 ns Peak Reverse Recovery Current I RM(REC) 35A Reverse Recovery Charge Qrr 50 75 nC www.bychip.cn RFD14N05SM9A v2.0

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transfer Characteristics Transconductance 0 0.5 1 1.5 2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 7 V VGS = 3 V VGS = 4 V 0 1 2 3 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 3 6 9 12 gfs - Transconductance (S) ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C On-Resistance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.04 0.06 0.07 0.08 0.09 0.10 0 5 10 15 20 25 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS =4.5V VGS = 10 V 0.03 0.06 0.09 0.12 0.15 2 4 6 8 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 6.6 A 0 6 12 18 24 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 40 V VDS = 15 V VDS = 30 V ID = 6.6 A www.bychip.cn RFD14N05SM9A v3.0

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 250 500 750 1000 1250 0 20 40 60 80 100 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.45 0.9 1.35 1.8 2.25 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) VGS = 4.5 V, ID = 6 A VGS = 10 V, ID = 6.6 A Threshold Voltage Drain Source Breakdown vs. Junction Temperature Current Derating 1.2 1.5 1.8 2.1 2.4 2.7 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ - Temperature (°C) ID = 250 μA 102 107 112 117 122 127 - 50 - 25 0 25 50 75 100 125 150 VDS (V) Drain-to-Source Voltage TJ - Temperature (°C) ID = 250 μA 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) www.bychip.cn RFD14N05SM9A v4.0

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Single Pulse Avalanche Current Capability vs. Time IDAV (A) Time (s) TJ = 25 °C TJ = 150 °C Safe Operating Area 0.01 0.1 100 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified DC, 10 s 1 s, 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 11 010-1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse www.bychip.cn RFD14N05SM9A v5.0